Low Temperature Thermoelectric Properties of Bi2−xSbxTeSe2 Crystals Near the N–p Crossover

M. K. Fuccillo,M. E. Charles,Y. S. Hor,Shuang Jia,R. J. Cava
DOI: https://doi.org/10.1016/j.ssc.2012.04.062
IF: 1.934
2012-01-01
Solid State Communications
Abstract:Seebeck coefficients, electrical resistivities, thermal conductivities and figure of merit ZT of Bi2−xSbxTeSe2 crystals (x=0.8, 0.9, 1.0, 1.1, and 1.2) measured along the hexagonal basal plane are presented. The crystals gradually change from n- to p-type with increasing Sb content, with the crossover lying in the region between x=1.0 and 1.1. The crossover is accounted for by a simple (p–n) electron-hole compensation model, as supported by carrier concentrations determined from Hall measurements. ZT was found to be maximized near the crossover on the p-type side, with the high electrical resistance of the Se-rich crystals apparently the limiting factor in the performance. These materials may serve as a basis for future nanostructuring or doping studies.
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