Abstract:Bismuth chalcogenides Bi$_2$Se$_3$ and Bi$_2$Te$_3$ are semiconductors, which can be both thermoelectric materials (TE) and topological insulators (TI). Lattice defects arising from vacancies, impurities, or dopants in these materials are important in that they provide the charge carriers in TE applications and compromise the performance of these materials as TIs. We present the first solid-state nuclear magnetic resonance (NMR) study of the $^{77}$Se and $^{125}$Te NMR resonances in polycrystalline powders of Bi$_2$Se$_3$ and Bi$_2$Te$_3$, respectively. The spin-lattice ($T_1$) relaxation is modeled by at most two exponentials. Within the framework of this model, the NMR measurement is sensitive to the distribution of native defects within these materials. One component corresponds to a stoichiometric fraction, an insulator with a very long $T_1$, whereas the other component is attributed to a sample fraction with high defect content with a short $T_1$ resulting from interaction with the conduction carriers. The absence of a very long $T_1$ in the bismuth telluride suggests defects throughout the sample. For the bismuth selenide, defect regions segregate into domains. We also find a substantial difference in the short $T_1$ component for $^{125}$Te nuclei (76 ms) and $^{77}$Se (0.63 s) in spite of the fact that these materials have nearly identical lattice structures, chemical and physical properties. Investigations of the NMR shift and Korringa law indicate that the coupling to the conduction band electrons at the chalcogenide sites is much stronger in the telluride. The results are consistent with a stronger spin-orbit coupling (SOC) to the $p$-band electrons in the telluride. If most parameters of a given material are kept equal, this type of experiment could provide a useful probe of SOC in engineered TI materials.

Signal oscillations in helium scattering by bismuth atoms in the low energy range

Stability Of The Bi2se3(111) Topological State: Electron-Phonon And Electron-Defect Scattering

A detailed analysis of impact collision ion scattering spectroscopy of bismuth selenide

Spin-Dependent Ion Scattering on Bismuth Surfaces

Structural and Electronic Properties of Atomically Thin Bismuth on Au(111)

Observation of inverse spin Hall effect in bismuth selenide

X-Band Parallel-Mode and Multifrequency Electron Paramagnetic Resonance Spectroscopy of S = 1/2 Bismuth Centers

Microstructure of bismuth centers in silicon before and after irradiation with 15 MeV protons

Temperature dependence of the Raman spectrum of orthorhombic Bi2Se3

Anisotropic light-matter interactions in the single-crystal topological insulator bismuth selenide

Acoustic phonon dynamics in thin-films of the topological insulator Bi2Se3

Observation of Dirac-like surface state bands on the top surface of BiSe

Stability of the Bi2Se3(111) topological state: electron-phonon and -defect scattering

On the electronic structure and spin–orbit coupling of BiB from photoelectron imaging of cryogenically-cooled BiB− anion

Spin-orbit Interaction and Large Inelastic Rates in Bismuth-Helium Collisions

Preparation of clean surfaces and Se vacancy formation in Bi$_{2}$Se$_{3}$ by ion bombardment and annealing

Revealing Optical Transitions and Carrier Recombination Dynamics within the Bulk Band Structure of Bi2Se3

Investigation of Angle dependent SdH oscillations in Topological Insulator Bismuth

Weak antilocalization and gigahertz acoustic phonons in Bi2Se2Te and Bi3Se2Te-dominated thin films grown using pulsed laser deposition

A computational study of the low-lying electronic states of diatomic beryllium bismuthide

Spin-lattice relaxation in bismuth chalcogenides