Abstract:Single crystals of silicon grown in an argon atmosphere were irradiated with three different neutron doses: 6 x 10(16), 3.6 x 10(17) and 1.2 x 10(18) cm-2. Positron annihilation spectroscopy indicates that there are two distinct annealing stages of V-type defects in the three neutron-irradiated silicon samples: one at about 200-degrees-C and another at about 500-degrees-C. The former is due to the annealing out of P-V and (V2-O)- complexes; the latter is due to the annealing out of (V2-O)0 complexes. For samples.irradiated with two different higher neutron doses, the intensity due to the radiation-induced monovacancy-type defects is above 58% and disappears at 550-degrees-C; the intensity due to the radiation-induced divacancies is above 23%, increases above 200-degrees-C and disappears at 600-650-degrees-C. For the sample irradiated with a lower neutron dose the intensity due to the divacancies is only 7.3%, it disappears below 200-degrees-C, and no secondary divacancies appear. The intensity due to the secondary divacancies is highly dependent on the neutron dose. There are two annealing stages Of V2 -type defects at 150-200-degrees-C and about 600-degrees-C. The former is due to the approach of interstitial silicon atoms to divacancies localized in the cores of neutron-radiation-disordered regions, and the latter is due to annealing out of divacancies in the 'undisturbed' matrix of the silicon crystal and V3-O complexes. For samples irradiated with two different higher neutron doses, monovacancy-type defects with higher intensities appear again at 600-650-degrees-C, which indicates the nature of the '600-650-degrees-C acceptor'. Above 700-degrees-C, many dislocations with 231 ps less-than-or-equal-to tau less-than-or-equal-to 239 ps (sometimes both dislocations and monovacancy-type defects (240 ps less-than-or-equal-to tau less-than-or-equal-to 266 ps)), are formed, especially for samples irradiated with higher neutron doses.

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Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28

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On the electronic structure and spin–orbit coupling of BiB from photoelectron imaging of cryogenically-cooled BiB− anion

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Positron Annihilation Study of Silicon Irradiated by Different Neutron Doses

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Spin-Dependent Ion Scattering on Bismuth Surfaces

The Crystalline Structure of Thin Bismuth Layers Grown on Silicon (111) Substrates

Hyperfine Clock Transitions of Bismuth Donors in Silicon Detected by Spin Dependent Recombination

Surface reconstruction induced anisotropic energy landscape of bismuth monomers and dimers on the Si(001) surface

The influence of impurities on the evaporation behavior of Po from liquid Pb–Bi eutectic at high temperatures

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Effect of 710 MeV Bi +51 swift heavy ions irradiation on Se pre-implanted polycrystalline SiC

Centers of near-IR luminescence in Bi-doped SiO2 and GeO2: First-principle modeling and experimental data analysis

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Hole and positron interaction with vacancies and p-type dopants in epitaxially grown silicon