Abstract:Donor spins in silicon-28 ($^{28}$Si) are among the most performant qubits in the solid state, offering record coherence times and gate fidelities above 99%. Donor spin qubits can be fabricated using the semiconductor-industry compatible method of deterministic ion implantation. Here we show that the precision of this fabrication method can be boosted by implanting molecule ions instead of single atoms. The bystander ions, co-implanted with the dopant of interest, carry additional kinetic energy and thus increase the detection confidence of deterministic donor implantation employing single ion detectors to signal the induced electron-hole pairs. This allows the placement uncertainty of donor qubits to be minimised without compromising on detection confidence. We investigate the suitability of phosphorus difluoride (PF$_2^+$) molecule ions to produce high quality P donor qubits. Since $^{19}$F nuclei have a spin of $I = 1/2$, it is imperative to ensure that they do not hyperfine couple to P donor electrons as they would cause decoherence by adding magnetic noise. Using secondary ion mass spectrometry, we confirm that F diffuses away from the active region of qubit devices while the P donors remain close to their original location during a donor activation anneal. PF$_2$-implanted qubit devices were then fabricated and electron spin resonance (ESR) measurements were performed on the P donor electron. A pure dephasing time of $T_2^* = 20.5 \pm 0.5$ $\mu$s and a coherence time of $T_2^{Hahn} = 424 \pm 5$ $\mu$s were extracted for the P donor electron-values comparable to those found in previous P-implanted qubit devices. Closer investigation of the P donor ESR spectrum revealed that no $^{19}$F nuclear spins were found in the vicinity of the P donor. Molecule ions therefore show great promise for producing high-precision deterministically-implanted arrays of long-lived donor spin qubits.

Hyperfine Clock Transitions of Bismuth Donors in Silicon Detected by Spin Dependent Recombination

Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28

Electron spin coherence and electron nuclear double resonance of Bi donors in natural Si

Induced spin-orbit coupling in silicon thin films by bismuth doping

Improved placement precision of implanted donor spin qubits in silicon using molecule ions

Spin relaxation and donor-acceptor recombination of Se$^+$ in 28-silicon

Multiple-quantum transitions and charge-induced decoherence of donor nuclear spins in silicon

Spin-orbit dynamics of single acceptor atoms in silicon

Electron paramagnetic resonance of boron acceptors in isotopically purified silicon

Isotopic enrichment of silicon by high fluence $^{28}$Si$^-$ ion implantation

Line Broadening and Decoherence of Electron Spins in Phosphorus-Doped Silicon Due to Environmental 29^Si Nuclear Spins

Spin-dependent recombination at arsenic donors in ion-implanted silicon

Spectral diffusion of phosphorus donors in silicon at high magnetic field

Electron spin echo relaxation and envelope modulation of phosphorus shallow donors in silicon

Measurement of enhanced spin-orbit coupling strength for donor-bound electron spins in silicon

Microscopic control of $^{29}$Si nuclear spins near phosphorus donors in silicon

Impact of measurement backaction on nuclear spin qubits in silicon

Fully Optical Scanning Spectroscopy of the Anticrossing of Electron and Nuclear Spin Levels in a 4H-SiC Crystal

Strong coupling of a superconducting flux qubit to single bismuth donors

Decoherence induced by anisotropic hyperfine interaction in Si spin qubits

Spin Relaxation of a Donor Electron Coupled to Interface States