Abstract:One of the great successes of quantum physics is the description of the long-lived Rydberg states of atoms and ions. The Bohr model is equally applicable to donor impurity atoms in semiconductor physics, where the conduction band corresponds to the vacuum, and the loosely bound electron orbiting a singly charged core has a hydrogen-like spectrum according to the usual Bohr-Sommerfeld formula, shifted to the far-infrared due to the small effective mass and high dielectric constant. Manipulation of Rydberg states in free atoms and ions by single and multi-photon processes has been tremendously productive since the development of pulsed visible laser spectroscopy. The analogous manipulations have not been conducted for donor impurities in silicon. Here we use the FELIX pulsed free electron laser to perform time-domain measurements of the Rydberg state dynamics in phosphorus- and arsenic-doped silicon and we have obtained lifetimes consistent with frequency domain linewidths for isotopically purified silicon. This implies that the dominant decoherence mechanism for excited Rydberg states is lifetime broadening, just as for atoms in ion traps. The experiments are important because they represent the first step towards coherent control and manipulation of atomic-like quantum levels in the most common semiconductor and complement magnetic resonance experiments in the literature, which show extraordinarily long spin lattice relaxation times key to many well-known schemes for quantum computing qubits for the same impurities. Our results, taken together with the magnetic resonance data and progress in precise placement of single impurities, suggest that doped silicon, the basis for modern microelectronics, is also a model ion trap.

Line Broadening and Decoherence of Electron Spins in Phosphorus-Doped Silicon Due to Environmental 29^Si Nuclear Spins

Electron spin echo relaxation and envelope modulation of phosphorus shallow donors in silicon

Spectral diffusion of phosphorus donors in silicon at high magnetic field

ESR measurements of phosphorus dimers in isotopically enriched 28Si silicon

Phosphorus Spin Coherence Times in Silicon at Very Low Temperatures

Zero field optical magnetic resonance study of phosphorus donors in 28-silicon

Dynamical Decoupling of Electron Spins in Phosphorus-Doped Silicon

Microscopic control of $^{29}$Si nuclear spins near phosphorus donors in silicon

Spin-Polarized Transient Electron Trapping In Phosphorus-Doped Silicon

Electrical detection and magnetic-field control of spin states in phosphorus-doped silicon

Spin-Polarized Transient Electron Trapping in Si:P

Multiple-quantum transitions and charge-induced decoherence of donor nuclear spins in silicon

Enhanced spin susceptibility in phosphorus-doped silicon

Silicon as a model ion trap: time domain measurements of donor Rydberg states

Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor

Electron spin coherence and electron nuclear double resonance of Bi donors in natural Si

Spin exchange dynamics in 4H SiC monocrystals with different nitrogen donor concentrations

Decoherence induced by anisotropic hyperfine interaction in Si spin qubits

Electron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices

Millisecond electron spin coherence time for erbium ions in silicon

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals