What problem does this paper attempt to address?

The problem that this paper attempts to solve is to study the linewidth broadening and decoherence effects of the donor electron spin by the environmental \(^{29}\text{Si}\) nuclear spins in phosphorus - doped silicon (Si:P). Specifically, the author experimentally explored the effects of different concentrations of \(^{29}\text{Si}\) isotopes (0.19% ≤ f ≤ 99.2%) on the electron spin resonance (ESR) linewidth and phase memory time \(T_M\) of the donor electron spin in phosphorus - doped silicon single crystals. ### Research Background and Problems 1. **Linewidth Broadening**: - In phosphorus - doped silicon, the \(^{29}\text{Si}\) nuclear spins affect the precession frequency of the donor electron spin through hyperfine interactions (hf), resulting in inhomogeneous broadening of the ESR spectral line. - When the \(^{29}\text{Si}\) concentration is high, this broadening follows a Gaussian distribution, and its full - width at half - maximum (FWHM) \(\Delta B_e\) has a square - root relationship with the \(^{29}\text{Si}\) concentration \(f\): \[ \Delta B_{\text{rms}}=\left[\sum_{l}\left(\frac{a_l}{2}\right)^2\right]^{1/2} \] where \(a_l\) is the isotropic hyperfine constant at the \(l\) - th position. 2. **Decoherence Effects**: - The magnetic dipole - dipole interactions between \(^{29}\text{Si}\) nuclear spins can cause spectral diffusion of the donor electron spin, thus causing decoherence. - This decoherence effect is particularly important for silicon - based quantum computing schemes because it may be a key factor limiting the qubit lifetime. ### Main Research Contents - **Experimental Verification of Linewidth Broadening**: Measure the ESR linewidth at different \(^{29}\text{Si}\) concentrations by pulsed ESR technology, verify the theoretically predicted square - root dependence, and analyze the change of line shape at low concentrations. - **Measurement of Decoherence Time \(T_M\)**: Measure the phase memory time \(T_M\) at different \(^{29}\text{Si}\) concentrations and magnetic field directions, and study its variation law with \(^{29}\text{Si}\) concentration and magnetic field direction. - **Comparison between Theory and Experiment**: Compare the experimental results with the theoretical model, verify the validity of the theoretical model, and provide references for other systems (such as electron spins in quantum dot nanostructures). ### Conclusions Through systematic experimental research, the author confirmed that when \(f\geq4.7\%\), the ESR linewidth indeed follows a square - root dependence; while when \(f\leq1.2\%\), the line shape deviates from the Gaussian distribution. In addition, the phase memory time \(T_M\) changes with the \(^{29}\text{Si}\) concentration according to a power law, which indicates that the nuclear - induced spectral diffusion is the dominant decoherence mechanism. These results provide an important basis for verifying relevant theories and lay the foundation for further research on the decoherence mechanism at low concentrations.

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