Abstract:Heavily phosphorus-doped Czochralski (HP-CZ) silicon is an important substrate material for manufacturing power electronic devices. The high concentration of phosphorus impurities may be supersaturated during the crystal growth of HP-CZ silicon or device manufacturing. Thus, understanding phosphorus precipitation in HP-CZ silicon is of technological significance. Herein, a panoramic view of phosphorus precipitation in HP-CZ silicon is presented in terms of crystallography, thermodynamics, and kinetics. It is found that the orthorhombic SiP precipitates can form during the crystal growth of HP-CZ silicon and also during the post-anneals of HP-CZ silicon at 450–1050 °C. Along with increasing annealing temperature, the formed SiP precipitates tend to adopt the platelet, polyhedron, and sphere-like shapes. Moreover, the excess point defects, i.e., silicon self-interstitials and vacancies, are found to affect phosphorus precipitation occurring in the low and high temperature regimes in different ways. In light of the kinetics of phosphorus precipitation at different temperatures, it is deduced that phosphorus precipitation follows a growth law in compliant with Ham's theory to a large extent. As an important output of this work, the temperature-dependent phosphorus solubilities in the dislocation-free silicon, which have been hardly acquired previously, are derived on the basis of investigating phosphorus precipitation in a set of HP-CZ silicon wafers with different phosphorus concentrations. Moreover, the derived solvus line for the phosphorus impurities in silicon could be a beneficial supplement to the existing phase diagram of the Si–P binary system in the extremely silicon-rich corner.

Enhanced spin susceptibility in phosphorus-doped silicon

Spectral diffusion of phosphorus donors in silicon at high magnetic field

Phosphorus Spin Coherence Times in Silicon at Very Low Temperatures

Line Broadening and Decoherence of Electron Spins in Phosphorus-Doped Silicon Due to Environmental 29^Si Nuclear Spins

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

Electron spin echo relaxation and envelope modulation of phosphorus shallow donors in silicon

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Comprehensive Understanding on Phosphorus Precipitation in Heavily Phosphorus-Doped Czochralski Silicon

ESR measurements of phosphorus dimers in isotopically enriched 28Si silicon

Tight-Binding Calculations Of The Optical Response Of Optimally P-Doped Si Nanocrystals: A Model For Localized Surface Plasmon Resonance

Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

Electrical detection and magnetic-field control of spin states in phosphorus-doped silicon

A comprehensive model of high-concentration phosphorus diffusion in silicon

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Simulation of Si:P spin-based quantum computer architecture

Clustering of phosphorus atoms in silicon

Measurement of enhanced spin-orbit coupling strength for donor-bound electron spins in silicon

Induced spin-orbit coupling in silicon thin films by bismuth doping

Engineering of the spin on dopant process on silicon on insulator substrate

Spin phonon interactions and magneto-thermal transport behavior in p-Si

Spin-dependent scattering in a silicon transistor