Abstract:Because digital information in semiconductor spintronics is encoded,stored,processed,and transferred by electron spins instead of its charge,the operation of a spintronic device requires that electrons in semiconductors are spin polarized.But spin states of electrons in traditional semiconductor materials are usually degenerate,therefore,conventional semiconductors cannot are directly exploited to design spintronic devices.Thus,how to spin polarized electrons in ordinary semiconductors (also called spin injection) including its effective manipulation has become an important direction of research.In physics,either Zeeman effect between electron spins and external magnetic fields or spin-orbit coupling of electron spins and its spatial momentums can be employed to achieve electron-spin polarization.According to these physical mechanisms,some effective schemes have been developed successfully,such as spin filtering,temporally separating electron-spins,spatial separations of electron spins,and so on.Utilizing theoretical analysis combined with numerical calculation,transmission time is investigated by considering both Zeeman effect as well as Rashba and Dresselhaus spin-orbit couplings for electron in magnetically confined semiconductor nanostructure,which is constructed on the GaAs/Al x Ga 1-x As heterostructure.Schrödinger equation of an electron is numerically solved by matrix diagonalization and improved transfer-matrix method.Adopting H.G.Winful's theory,dwell time of electron is calculated and spin polarization ratio is given.Due to Zeeman effect and spin-orbit coupling,dwell time of electron is obviously associated with the spins,which is used to separate electron-spins in time dimension and to realize spin polarization of electrons in semiconductors.Because the semiconductor GaAs has a small effective g-factor,electron-spin polarization originates mainly from spin-orbit coupling including Rashba and Dresselhaus types,which is circa 4 times larger than that induced by Zeeman effect.Dwell time of electron and its spin polarization can be efficaciously modified by interfacial confining electric-field or strain engineering,as the effective potential of electron is related to spin-orbit coupling's strength.These interesting findings not only have some references for spin injection into semiconductors,but also provide a controllable temporal electron-spin splitter for semiconductor spintronics device applications.

Spin-dependent scattering in a silicon transistor

Measurement of enhanced spin-orbit coupling strength for donor-bound electron spins in silicon

Experimental realization of a silicon spin field-effect transistor

Electron spin echo relaxation and envelope modulation of phosphorus shallow donors in silicon

Electrical Spin Injection and Detection in Silicon Nanowires with Axial Doping Gradient

Spin-Polarized Transient Electron Trapping in Si:P

Spin-dependent recombination at arsenic donors in ion-implanted silicon

Spin transference and magnetoresistance amplification in a transistor

Measurement of Enhanced Spin‐Orbit Coupling Strength for Donor‐Bound Electron Spins in Silicon

Spin-orbit dynamics of single acceptor atoms in silicon

Spin Relaxation in Silicon Via Dynamic Exchange

Spin-Polarized Transient Electron Trapping In Phosphorus-Doped Silicon

Efficient Spin Injection into Silicon and the Role of the Schottky Barrier

Theory of Spin Transport Induced by Ferromagnetic Proximity On a Two-Dimensional Electron Gas

Spin-Dependent Capture Mechanism for Magnetic Field Effects on Interface Recombination Current in Semiconductor Devices

Spin lifetime in silicon in the presence of parasitic electronic effects

Spin diffusion and injection in semiconductor structures: Electric field effects

Monte Carlo Simulations of Spin Transport in a Strained Nanoscale InGaAs Field Effect Transistor

Spin-orbit coupling induced two-electron relaxation in silicon donor pairs

Transmission time and spin polarization for electron in magnetically confined semiconducotr nanostructure modulated by spin-orbit coupling

Nanometrology of Field Gradient Using Donor Spins in Silicon