Abstract:The electronic and nuclear spin degrees of freedom for donor impurities in semiconductors form ultra coherent two-level systems that are useful for quantum information applications. Spins naturally have magnetic dipoles, so alternating current (AC) magnetic fields are frequently used to drive spin transitions and perform quantum gates. These fields can be difficult to spatially confine to single donor qubits so alternative methods of control such as AC electric field driven spin resonance are desirable. However, donor spin qubits do not have electric dipole moments so that they can not normally be driven by electric fields. In this work we challenge that notion by demonstrating a new, all-electric-field method for controlling neutral $^{31}$P and $^{75}$As donor nuclear spins in silicon through modulation of their donor-bound electrons. This method has major advantages over magnetic field control since electric fields are easy to confine at the nanoscale. This leads to lower power requirements, higher qubit densities, and faster gate times. We also show that this form of control allows for driving nuclear spin qubits at either their resonance frequency or the first subharmonic of that frequency, thus reducing device bandwidth requirements. Interestingly, as we relax the bandwidth requirements, we demonstrate that the computational Hilbert space is expanded to include double quantum transitions, making it feasible to use all four nuclear spin states to implement nuclear-spin-based qudits in Si:As. Based on these results, one can envision novel high-density, low-power quantum computing architectures using nuclear spins in silicon.

Electrical detection and magnetic-field control of spin states in phosphorus-doped silicon

Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor

Electrical Detection of Coherent Nuclear Spin Oscillations in Phosphorus-Doped Silicon Using Pulsed ENDOR

Radio frequency readout of electrically detected magnetic resonance in phosphorus-doped silicon MOSFETs

Spectral diffusion of phosphorus donors in silicon at high magnetic field

Line Broadening and Decoherence of Electron Spins in Phosphorus-Doped Silicon Due to Environmental 29^Si Nuclear Spins

Microscopic control of $^{29}$Si nuclear spins near phosphorus donors in silicon

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Enhanced spin susceptibility in phosphorus-doped silicon

All-Electrical Readout of Coherently Controlled Spins in Silicon Carbide

Electron spin echo relaxation and envelope modulation of phosphorus shallow donors in silicon

Phosphorus Spin Coherence Times in Silicon at Very Low Temperatures

Electrical manipulation of the spins in phosphorene double quantum dots

Tuning electrical and optical anisotropy of a monolayer black phosphorus magnetic superlattice

Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

Tuning the electrical and optical anisotropy of a monolayer black phosphorus magnetic superlattice

Spin accumulation detection of FMR driven spin pumping in silicon-based metal-oxide-semiconductor heterostructures

ESR measurements of phosphorus dimers in isotopically enriched 28Si silicon

Using Light to Polarize and Detect Electron Spins in Silicon

Characterization of Electronic Charged States of P-doped Si Quantum Dots Using AFM/Kelvin Probe

Electrically driving nuclear spin qubits with microwave photonic bangap resonators