Abstract:The detection of electron spins associated with single defects in solids is a critical operation for a range of quantum information and measurement applications under development. So far, it has been accomplished for only two defect centres in crystalline solids: phosphorus dopants in silicon, for which electrical read-out based on a single-electron transistor is used, and nitrogen-vacancy centres in diamond, for which optical read-out is used. A spin read-out fidelity of about 90 per cent has been demonstrated with both electrical read-out and optical read-out; however, the thermal limitations of the former and the poor photon collection efficiency of the latter make it difficult to achieve the higher fidelities required for quantum information applications. Here we demonstrate a hybrid approach in which optical excitation is used to change the charge state (conditional on its spin state) of an erbium defect centre in a silicon-based single-electron transistor, and this change is then detected electrically. The high spectral resolution of the optical frequency-addressing step overcomes the thermal broadening limitation of the previous electrical read-out scheme, and the charge-sensing step avoids the difficulties of efficient photon collection. This approach could lead to new architectures for quantum information processing devices and could drastically increase the range of defect centres that can be exploited. Furthermore, the efficient electrical detection of the optical excitation of single sites in silicon represents a significant step towards developing interconnects between optical-based quantum computing and silicon technologies.

Using Light to Polarize and Detect Electron Spins in Silicon

Optical detection of long electron spin transport lengths in a monolayer semiconductor

Optical Addressing of an Individual Erbium Ion in Silicon

Polarimetry With Spins in the Solid State

Efficient Spin Injection into Silicon and the Role of the Schottky Barrier

Room temperature magneto-optic effect in silicon light-emitting diodes

Photoluminescence spectroscopy of hybridized exciton-polariton coupling in silicon nanodisks with nonradiative anapole radiations

Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot

Optical sensing of charge and spin current fluctuations in centrosymmetric semiconductors

Spin-dependent optical properties in strained silicon and germanium

Pure circular polarization electroluminescence at room temperature with spin-polarized light-emitting diodes

Millisecond electron spin coherence time for erbium ions in silicon

All-Electrical Readout of Coherently Controlled Spins in Silicon Carbide

Electrical readout of spins in the absence of spin blockade

Spin-dependent recombination involving oxygen-vacancy complexes in silicon

In-situ Measurement of the Electron Spin Polarization by Controlling Its Distribution in Atomic Ensembles

All-optical spin access via a cavity-broadened optical transition in on-chip hybrid quantum photonics

Resonant optical spectroscopy and coherent control of Cr4+ spin ensembles in SiC and GaN

Dynamical Reorientation of Spin Multipoles in Silicon Carbide by Transverse Magnetic Fields

Strain effects in phosphorous bound exciton transitions in silicon

Optical single-shot readout of spin qubits in silicon