Abstract:The detection of electron spins associated with single defects in solids is a critical operation for a range of quantum information and measurement applications under development. So far, it has been accomplished for only two defect centres in crystalline solids: phosphorus dopants in silicon, for which electrical read-out based on a single-electron transistor is used, and nitrogen-vacancy centres in diamond, for which optical read-out is used. A spin read-out fidelity of about 90 per cent has been demonstrated with both electrical read-out and optical read-out; however, the thermal limitations of the former and the poor photon collection efficiency of the latter make it difficult to achieve the higher fidelities required for quantum information applications. Here we demonstrate a hybrid approach in which optical excitation is used to change the charge state (conditional on its spin state) of an erbium defect centre in a silicon-based single-electron transistor, and this change is then detected electrically. The high spectral resolution of the optical frequency-addressing step overcomes the thermal broadening limitation of the previous electrical read-out scheme, and the charge-sensing step avoids the difficulties of efficient photon collection. This approach could lead to new architectures for quantum information processing devices and could drastically increase the range of defect centres that can be exploited. Furthermore, the efficient electrical detection of the optical excitation of single sites in silicon represents a significant step towards developing interconnects between optical-based quantum computing and silicon technologies.

Optical sensing of charge and spin current fluctuations in centrosymmetric semiconductors

Proposal for the Direct Optical Detection of Pure Spin Currents in Semiconductors

Investigations of a coherently driven semiconductor optical cavity QED system

Theory of Direct Optical Measurement of Pure Spin Currents in Direct-Gap Semiconductors

Proposal for Direct Measurement of A Pure Spin Current by A Polarized Light Beam

Quantum spin probe of single charge dynamics

QUANTUM SPIN CURRENT INDUCED THROUGH OPTICAL DIPOLE TRANSITION PROCESS IN SEMICONDUCTORS

Optical amplification of spin noise spectroscopy via homodyne detection

Unambiguous Electrical Detection of Spin-Charge Conversion in Lateral Spin-Valves

Circular photocurrents in centrosymmetric semiconductors with hidden spin polarization

Optical detection of long electron spin transport lengths in a monolayer semiconductor

Optical-microwave pump-probe studies of electronic properties in novel materials

Quantum Spin Current Induced Through Optical Fields

Measurement of Pure Spin Currents in Semiconductors

Using Light to Polarize and Detect Electron Spins in Silicon

Optical Effects of Spin Currents in Semiconductors

Optically induced spin electromotive force in ferromagnetic-semiconductor quantum well structure

Probing single charge fluctuations in a semiconductor with laser spectroscopy on a quantum dot

Dynamics of a mesoscopic nuclear spin ensemble interacting with an optically driven electron spin

Optical heterodyne microscopy of operating spin Hall nano-oscillator arrays

Optical Addressing of an Individual Erbium Ion in Silicon