Abstract:Voltage control of ferromagnetism on the nanometer scale is highly appealing for the development of novel electronic devices. Here a key challenge is to implement and combine low power consumption, high operation speed, reliable reversibility and compatibility with semiconductor technology. Hybrid structures based on the assembly of ferromagnetic and semiconducting building blocks are attractive candidates in that respect as such systems bring together the properties of the isolated constituents: They are expected to show magnetic order as a ferromagnet and to be electrically tunable as a semiconductor. Here we demonstrate the electrical control of the exchange coupling in a hybrid consisting of a ferromagnetic Co layer and a semiconductor CdTe quantum well, separated by a thin non-magnetic (Cd,Mg)Te barrier. The effective magnetic field of the exchange interaction reaches up to 2.5 Tesla and can be turned on and off by application of 1 V bias across the heterostructure. The mechanism of this electric field control is essentially different from the conventional concept, in which wavefunctions are spatially redistributed to vary the exchange interaction, requiring high field strengths. Here we address instead control of the novel exchange mechanism that is mediated by elliptically polarized phonons emitted from the ferromagnet, i.e. the phononic ac Stark effect. An essential parameter of this coupling is the splitting between heavy and light hole states in the quantum well which can be varied by the electric field induced band bending. Thereby the splitting can be tuned with respect to the magnon-phonon resonance energy in the ferromagnet, leading to maximum coupling for flat band conditions. Our results demonstrate the feasibility of electrically controlled exchange coupling in hybrid semiconductor nanostructures at quite moderate electric field strengths.

Optically induced spin electromotive force in ferromagnetic-semiconductor quantum well structure

Ultrafast Optical Observation of Spin-Pumping Induced Dynamic Exchange Coupling in Ferromagnetic Semiconductor/metal Bilayer.

Observation of large spin-polarized Fermi surface of a magnetically proximitized semiconductor quantum well

Observation of a two-dimensional spin-lattice in non-magnetic semiconductor heterostructures

Probing the Semiconductor to Semimetal Transition in InAs/GaSb Double Quantum Wells by Magneto-Infrared Spectroscopy

Tunable spin photogalvanic effect in two-dimensional van der Waals ferroelectric semiconductors with spin-orbit coupling

Voltage control of the long-range p-d exchange coupling in a ferromagnet-semiconductor quantum well hybrid structure

Highly Efficient Spin Injection and Readout Across Van Der Waals Interface.

Spin-dependent Conductance in FM/quantum-dot/FM Tunneling System

Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature.

Interplay of spin and orbital magnetogyrotropic photogalvanic effects in InSb/AlInSb quantum well structures

Study on spin and optical polarization in a coupled InGaN/GaN quantum well and quantum dots structure

Enhancing Magnetic Damping under GaAs Band-Edge Photoexcitation in a Co2FeAl/ n-GaAs Heterojunction

Complementary spin-Hall and inverse spin-galvanic effect torques in a ferromagnet/semiconductor bilayer

Spin accumulation detection of FMR driven spin pumping in silicon-based metal-oxide-semiconductor heterostructures

Electrical spin injection and detection in a semiconductor. Is it feasible?

Dynamic detection of electron spin accumulation in ferromagnet-semiconductor devices by ferromagnetic resonance

Electrical Detection of Spin Transport in Si Two-Dimensional Electron Gas Systems

Spin-helical detection in a semiconductor quantum device with ferromagnetic contacts

Spin-orbit-coupling induced electron-spin polarization in magnetically and electrically confined semiconductor microstructure

Electron-magnon spin conversion and magnonic spin pumping in antiferromagnet/heavy metal heterostructure