Optically induced spin electromotive force in ferromagnetic-semiconductor quantum well structure

Igor V. Rozhansky,Ina V. Kalitukha,Grigorii S. Dimitriev,Olga S. Ken,Mikhail V. Dorokhin,Boris N. Zvonkov,Dmitri S. Arteev,Nikita S. Averkiev,Vladimir L. Korenev

DOI: https://doi.org/10.1021/acs.nanolett.3c00769

2023-04-17

Abstract:Hybrid structures combining ferromagnetic (FM) and semiconductor constituents have great potential for future applications in the field of spintronics. A systematic approach to study spin-dependent transport in the GaMnAs/GaAs/InGaAs quantum well (QW) hybrid structure with a few nanometer thick GaAs barrier is developed. It is demonstrated that a combination of spin electromotive force measurements and photoluminescence detection provides a powerful tool for studying the properties of such hybrid structures and allows to resolve the dynamic FM proximity effect on a nanometer scale. The method can be generalized on various systems including rapidly developing 2D van der Waals materials.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The problems that this paper attempts to solve are: How to study spin - related transport phenomena by combining optical and electrical measurement methods in the ferromagnet - semiconductor quantum well (FM - QW) hybrid structure, and clearly distinguish the spin - dependent tunneling effect. Specifically, the paper aims to:

1. **Study the ferromagnet proximity effect**: Explore the spin - polarization phenomenon generated when the ferromagnet contacts the semiconductor, especially the performance of the dynamic ferromagnet proximity effect on the nanoscale.

2. **Develop new measurement tools**: By combining spin - photo - EMF (spin - photo - electromotive force) and photoluminescence (PL) detection, provide a powerful tool to study the spin - dependent transport characteristics in the ferromagnet - semiconductor hybrid structure.

3. **Explain experimental phenomena**: Reveal and explain the hysteresis loop behavior of the spin - photo - voltage and the PL circular polarization degree with respect to the magnetic field observed in the experiment, as well as the relationship between these phenomena and the ferromagnet proximity effect.

4. **Verify the theoretical model**: Establish a theoretical model based on the rate equation to explain the experimental results and explore the influence of the interaction between the tunneling time and the radiative recombination time on the spin - dependent transport.

### Summary of main problems

- **Spin - dependent tunneling effect**: How to achieve effective spin - dependent tunneling at the ferromagnet - semiconductor interface and verify it by experimental means.
- **Spin - polarization on the nanoscale**: How to detect and characterize the influence of the ferromagnet proximity effect on the carrier spin - polarization in the semiconductor on the nanoscale.
- **Mechanism of spin - photo - voltage**: Understand the generation mechanism of spin - photo - voltage and its relationship with spin - dependent tunneling.
- **Regulation of PL circular polarization degree**: Study the variation law and physical significance of the PL circular polarization degree under different conditions (such as magnetic field, laser polarization, etc.).

### Summary of formulas

1. **Relative spin - photo - voltage**:
\[
\xi=\frac{U_+(g, B)-U_-(g, B)}{U_+(g, B)+U_-(g, B)}=\frac{U_S}{U_I}
\]
where \(U_+\) and \(U_-\) are the photo - voltages measured when excited by right - and left - circularly polarized light respectively under the magnetic field \(B\).

2. **PL circular polarization degree**:
\[
\rho^\pi_c=\frac{I^\pi_{\sigma^+}-I^\pi_{\sigma^-}}{I^\pi_{\sigma^+}+I^\pi_{\sigma^-}}
\]
where \(I^\pi_{\sigma^+}\) and \(I^\pi_{\sigma^-}\) are the right - and left - circularly polarized PL intensities respectively under linear - polarized light excitation.

3. **PL intensity modulation parameter**:
\[
\eta=\frac{I_{\sigma^+}-I_{\sigma^-}}{I_{\sigma^+}+I_{\sigma^-}}
\]
where \(I_{\sigma^+}\) and \(I_{\sigma^-}\) are the total PL intensities respectively under circularly - polarized light excitation.

4. **Spin - photo - voltage expression**:
\[
U_S=\frac{U_+-U_-}{2}=-\alpha G_0 P_0 \tau_0 \frac{\tau_\downarrow-\tau_\uparrow}{(\tau_\uparrow+\tau_0)(\tau_\downarrow+\tau_0)}
\]

5. **Theoretical expression of relative spin - photo - voltage**:
\[
\xi_{th}=\frac{U_S}{U_I}=-\gamma M P_0 \frac{\tau}{\tau_0} \frac{1}{\frac{\tau}{\tau_0}+1}
\]

Through these formulas, the author can quantitatively describe the influence of spin - dependent tunneling on the photo - voltage and PL characteristics.