Phosphorus Spin Coherence Times in Silicon at Very Low Temperatures

L. K. Alexander,N. Suwuntanasarn,W. D. Hutchison,L.K. Alexander,W.D. Hutchison

DOI: https://doi.org/10.48550/arXiv.1009.4240

2010-09-22

Materials Science

Abstract:Phosphorus donor spin coherence in isotopically pure 28 silicon is measured at very low temperatures using pulsed electron spin resonance. The isolated spin T2 varies unexpectedly with phosphorus concentration

What problem does this paper attempt to address?

Line Broadening and Decoherence of Electron Spins in Phosphorus-Doped Silicon Due to Environmental 29^Si Nuclear Spins

Eisuke Abe,Akira Fujimoto,Junichi Isoya,Satoshi Yamasaki,Kohei M. Itoh

DOI: https://doi.org/10.1103/PhysRevB.82.121201

2005-12-16

Abstract:Phosphorus-doped silicon single crystals with 0.19 % <= f <= 99.2 %, where f is the concentration of 29^Si isotopes, are measured at 8 K using a pulsed electron spin resonance technique, thereby the effect of environmental 29^Si nuclear spins on the donor electron spin is systematically studied. The linewidth as a function of f shows a good agreement with theoretical analysis. We also report the phase memory time T_M of the donor electron spin dependent on both f and the crystal axis relative to the external magnetic field.

Materials Science,Quantum Physics
Spectral diffusion of phosphorus donors in silicon at high magnetic field

Lihuang Zhu,Johan van Tol,Chandrasekhar Ramanathan

DOI: https://doi.org/10.48550/arXiv.2107.06390

2021-07-14

Abstract:We characterize the phase memory time of phosphorus donor electron spins in lightly-doped natural silicon at high magnetic field (8.58 T) in the dark and under low-power optical excitation. The spin echo decays are dominated by spectral diffusion due to the presence of the 4.7% abundant spin-1/2 silicon-29 nuclei. At 4.2 K, the spectral diffusion time (T$_{SD}$) measured in the dark is $124 \pm 7$ $\mu$s, a factor of 2 smaller than that measured at low magnetic fields (0.35 T). Using a tunable laser we also measured the echo decay as the wavelength of the optical excitation is swept across the band edge from 1050 nm to 1090 nm. Above-bandgap optical excitation is seen to increase the spectral diffusion time of the donor electron spin to $201 \pm 11$ $\mu$s. The physical mechanism underlying both the decrease of T$_{SD}$ at high field and the subsequent increase under optical excitation remains unclear.

Quantum Physics,Mesoscale and Nanoscale Physics
Spin Dephasing of Fluorine-Bound Electrons in ZnSe

A. Greilich,A. Pawlis,F. Liu,O. A. Yugov,D. R. Yakovlev,K. Lischka,Y. Yamamoto,M. Bayer

DOI: https://doi.org/10.1103/physrevb.85.121303

IF: 3.7

2012-01-01

Physical Review B

Abstract:The spin coherence of an ensemble of electrons bound to fluorine donors in epitaxially grown ZnSe layers is studied by time-resolved pump-probe Kerr rotation. Long-lived spin dephasing with decay times up to T-2* = 33 ns is found for a sample with a low fluorine concentration of 1 x 10(15) cm(-3) at cryogenic temperatures. The time is close to the limit set by nuclear-spin fluctuations, for which we measure a strength of 1.65 mT. We find T-2* to be constant up to 40 K, with a strong drop for higher temperatures. The dephasing time also shortens with increasing fluorine concentration, indicating an interaction between the spins at different fluorine centers.
ESR measurements of phosphorus dimers in isotopically enriched 28Si silicon

S. Shankar,A. M. Tyryshkin,S. A. Lyon

DOI: https://doi.org/10.1103/PhysRevB.91.245206

2015-06-11

Abstract:Dopants in silicon have been studied for many decades using optical and electron spin resonance (ESR) spectroscopy. Recently, new features have been observed in the spectra of dopants in isotopically enriched 28Si since the reduced inhomogeneous linewidth in this material improves spectral resolution. With this in mind, we measured ESR on exchange coupled phosphorus dimers in 28Si and report two results. First, a new fine structure is observed in the ESR spectrum arising from state mixing by the hyperfine coupling to the 31P nuclei, which is enhanced when the exchange energy is comparable to the Zeeman energy. This fine structure enables us to spectroscopically address two separate dimer sub-ensembles, the first with exchange (J) coupling ranging from 2 to 7 GHz and the second with J ranging from 6 to 60 GHz. Next, the average spin relaxation times, T1 and T2 of both dimer sub-ensembles were measured using pulsed ESR at 0.35 T. Both T1 and T2 for transitions between triplet states of the dimers were found to be identical to the relaxation times of isolated phosphorus donors in 28Si, with T2 = 4 ms at 1.7 K limited by spectral diffusion due to dipolar interactions with neighboring donor electron spins. This result, consistent with theoretical predictions, implies that an exchange coupling of 2 - 60 GHz does not limit the dimer T1 and T2 in bulk Si at the 10 ms timescale.

Materials Science,Mesoscale and Nanoscale Physics
Enhanced spin susceptibility in phosphorus-doped silicon

K. F. Berggren

DOI: https://doi.org/10.1080/14786439808206528

1974-07-01

Abstract:The spin susceptibility of Si:P is calculated for concentrations of donors at which the extrinsic electrons form a metallic band. The calculations are based on the Brinkman-Rice expression for the susceptibility of a highly correlated tight-binding system, and the hopping integral T and the intra-, atomic repulsion U are evaluated from realistic impurity wave functions. The calculated susceptibility shows a strong enhancement due to electron correlation effects, and is in qualitative agreement with recent ESR experiments. Estimates of the Curie-Weiss temperature of the non-metallic phase and of the critical concentration for the metal-non-metal transition are also presented. Finally, the present model is compared with other models.

materials science, multidisciplinary,physics, applied, condensed matter,metallurgy & metallurgical engineering
Electron spin echo relaxation and envelope modulation of phosphorus shallow donors in silicon

A. Ferretti,M. Fanciulli,A. Ponti,A. Schweiger

DOI: https://doi.org/10.48550/arXiv.cond-mat/0510497

2005-10-19

Abstract:Spins of single donor atoms are attractive candidates for large scale quantum information processing in silicon, since quantum computation can be realized through the manipulation of electron and/or nuclear spins. We here report on two-pulse electron spin echo experiments on phosphorus shallow donors in natural and 28Si-enriched silicon epilayers doped with 10^16 cm-3 P donors. The experiments address the spin-spin relaxation times and mechanisms and provide, through the electron spin echo envelope modulation (ESEEM) effect, information on the donor electron wave function. Experiments performed as a function of the pulse turning angle allowed us to measure the exponential relaxation and spectral diffusion times depurated by instantaneous diffusion. According to these results, isotopically purified samples are necessary to reduce the spectral diffusion contribution and the P shallow donors concentration plays a fundamental role in determining the intrinsic phase memory time. ESEEM peaks have been assigned to hyperfine-coupled silicon-29 nuclei at specific crystallographic positions on the basis of a spectral fit procedure including instrumental distortions.

Materials Science
Dynamical Decoupling of Electron Spins in Phosphorus-Doped Silicon

Xing Rong,Ya Wang,JiaHui Yang,JinXian Zhu,WanJie Xu,PengBo Feng,XuJie Wen,JiHu Su,JiangFeng Du

DOI: https://doi.org/10.1007/s11434-010-4321-y

2011-01-01

Abstract:Quantum coherence is an important enabling feature underpinning quantum computation. However, because of couplings with its noisy surrounding environment, qubits suffer from the decoherence effects. The dynamical decoupling (DD) technique uses pulse-induced qubit flips to effectively mitigate couplings between qubits and environment. Optimal DD eliminates dephasing up to a given order with the minimum number of pulses. In this paper, we first introduce our recent work on prolonging electron spin coherence in γ-irradiated malonic acid crystals and analyze different decoherence mechanisms in this solid system. Then we focus on electron spin relaxation properties in another system, phosphorous-doped silicon (Si:P) crystals. These properties have been investigated by pulse electron paramagnetic resonance (EPR). We also investigate the performance of the dynamical decoupling technique on this system. Using 8-pulse periodic DD, the coherence time can be extended to 296 μs compared with 112 μs with one-pulse control.
Electron spin coherence and electron nuclear double resonance of Bi donors in natural Si

Richard E. George,Wayne Witzel,H. Riemann,N.V. Abrosimov,N. Notzel,Mike L. W. Thewalt,John J. L. Morton

DOI: https://doi.org/10.1103/PhysRevLett.105.067601

2010-09-01

Abstract:Donors in silicon hold considerable promise for emerging quantum technologies, due to the their uniquely long electron spin coherence times. Bi donors in silicon differ from P and other Group V donors in several significant respects: they have the strongest binding energy (70.98 meV), a large nuclear spin (I = 9/2) and strong hyperfine coupling constant (A = 1475.4 MHz). These larger energy scales allow a detailed test of theoretical models describing the spectral diffusion mechanism that is known to govern the electron spin coherence time (T2e) of P-donors in natural silicon. We report the electron nuclear double resonance spectra of the Bi donor, across the range 200 MHz to 1.4 GHz, and confirm that coherence transfer is possible between electron and nuclear spin degrees of freedom at these higher frequencies.

Materials Science,Quantum Physics
Electron Spin Coherence of Shallow Donors in Natural and Isotopically Enriched Germanium

A. J. Sigillito,R. M. Jock,A. M. Tyryshkin,J. W. Beeman,E. E. Haller,K. M. Itoh,S. A. Lyon,A. J. Sigillito,R. M. Jock,A. M. Tyryshkin,J. W. Beeman,E. E. Haller,K. M. Itoh,S. A. Lyon

DOI: https://doi.org/10.1103/physrevlett.115.247601

IF: 8.6

2015-12-07

Physical Review Letters

Abstract:Germanium is a widely used material for electronic and optoelectronic devices and recently it has become an important material for spintronics and quantum computing applications. Donor spins in silicon have been shown to support very long coherence times (T_{2}) when the host material is isotopically enriched to remove any magnetic nuclei. Germanium also has nonmagnetic isotopes so it is expected to support long T_{2}'s while offering some new properties. Compared to Si, Ge has a strong spin-orbit coupling, large electron wave function, high mobility, and highly anisotropic conduction band valleys which will all give rise to new physics. In this Letter, the first pulsed electron spin resonance measurements of T_{2} and the spin-lattice relaxation (T_{1}) times for ^{75}As and ^{31}P donors in natural and isotopically enriched germanium are presented. We compare samples with various levels of isotopic enrichment and find that spectral diffusion due to ^{73}Ge nuclear spins limits the coherence in samples with significant amounts of ^{73}Ge. For the most highly enriched samples, we find that T_{1} limits T_{2} to T_{2}=2T_{1}. We report an anisotropy in T_{1} and the ensemble linewidths for magnetic fields oriented along different crystal axes but do not resolve any angular dependence to the spectral-diffusion-limited T_{2} in samples with ^{73}Ge.

physics, multidisciplinary
Room Temperature Microsecond Coherence of Silicon Dangling Bonds

J. Möser,H. Popli,T. H. Tennahewa,T. Biktagirov,J. Behrends,W. Akhtar,H. Malissa,C. Boehme,W. G. Schmidt,U. Gerstmann,K. Lips

2024-02-26

Abstract:Paramagnetic point defects in silicon provide qubits that could open up pathways towards silicon-technology based, low-cost, room-temperature (RT) quantum sensing. The silicon dangling bond (db) is a natural candidate, given its sub-nanometer localization and direct involvement in spin-dependent charge-carrier recombination, allowing for electrical spin readout. In crystalline silicon, however, rapid loss of db spin-coherence at RT due to free-electron trapping, strongly limits quantum applications. In this work, by combining density-functional theory and multifrequency (100 MHz-263 GHz) pulsed electrically detected magnetic resonance spectroscopy, we show that upon electron capture, dbs in a hydrogenated amorphous silicon matrix form metastable spin pairs in a well-defined quasi two-dimensional (2D) configuration. Although highly localized, these entangled spin pairs exhibit nearly vanishing intrinsic dipolar and exchange coupling. The formation of this magic-angle-like configuration involves a >0.3 eV energy relaxation of a trapped electron, stabilizing the pair. This extends RT spin coherence times into the microsecond range in silicon required for a future spin-based quantum sensing technology.

Mesoscale and Nanoscale Physics
Microscopic control of $^{29}$Si nuclear spins near phosphorus donors in silicon

J. Järvinen,D. Zvezdov,J. Ahokas,S. Sheludyakov,O. Vainio,L. Lehtonen,S. Vasiliev,Y. Fujii,S. Mitsudo,T. Mizusaki,M. Gwak,SangGap Lee,Soonchil Lee,L. Vlasenko

DOI: https://doi.org/10.1103/PhysRevB.92.121202

2015-01-02

Abstract:We demonstrate an efficient control of $^{29}$Si nuclear spin orientation for specific lattice sites near $^{31}$P donors in silicon crystals at temperatures below 1 K and in high magnetic field of 4.6 T. Excitation of the forbidden electron-nuclear transitions leads to a pattern of narrow holes and peaks in the ESR lines of $^{31}$P. The pattern originates from dynamic polarization the $^{29}$Si nuclear spins near the donors via the solid effect. This method can be used for initialization of qubits based on $^{29}$Si nuclear spins in the all-silicon quantum computer. In comparison, polarization of $^{29}$Si performed by pumping the allowed ESR transitions, did not create any patterns. Instead, a single narrow spectral hole was burnt in the ESR line. The difference is explained by a rapid spin diffusion during the microwave pumping of the allowed transitions.

Atomic and Molecular Clusters,Mesoscale and Nanoscale Physics
Silicon as a model ion trap: time domain measurements of donor Rydberg states

N Q Vinh,P T Greenland,K Litvinenko,B Redlich,A F G van der Meer,S A Lynch,M Warner,A M Stoneham,G Aeppli,D J Paul,C R Pidgeon,B N Murdin

DOI: https://doi.org/10.48550/arXiv.0812.0148

2008-12-01

Abstract:One of the great successes of quantum physics is the description of the long-lived Rydberg states of atoms and ions. The Bohr model is equally applicable to donor impurity atoms in semiconductor physics, where the conduction band corresponds to the vacuum, and the loosely bound electron orbiting a singly charged core has a hydrogen-like spectrum according to the usual Bohr-Sommerfeld formula, shifted to the far-infrared due to the small effective mass and high dielectric constant. Manipulation of Rydberg states in free atoms and ions by single and multi-photon processes has been tremendously productive since the development of pulsed visible laser spectroscopy. The analogous manipulations have not been conducted for donor impurities in silicon. Here we use the FELIX pulsed free electron laser to perform time-domain measurements of the Rydberg state dynamics in phosphorus- and arsenic-doped silicon and we have obtained lifetimes consistent with frequency domain linewidths for isotopically purified silicon. This implies that the dominant decoherence mechanism for excited Rydberg states is lifetime broadening, just as for atoms in ion traps. The experiments are important because they represent the first step towards coherent control and manipulation of atomic-like quantum levels in the most common semiconductor and complement magnetic resonance experiments in the literature, which show extraordinarily long spin lattice relaxation times key to many well-known schemes for quantum computing qubits for the same impurities. Our results, taken together with the magnetic resonance data and progress in precise placement of single impurities, suggest that doped silicon, the basis for modern microelectronics, is also a model ion trap.

Other Condensed Matter,Materials Science
Electron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices

Stefanie B. Tenberg,Serwan Asaad,Mateusz T. Mądzik,Mark A. I. Johnson,Benjamin Joecker,Arne Laucht,Fay E. Hudson,Kohei M. Itoh,A. Malwin Jakob,Brett C. Johnson,David N. Jamieson,Jeffrey C. McCallum,Andrew S. Dzurak,Robert Joynt,Andrea Morello

DOI: https://doi.org/10.1103/PhysRevB.99.205306

2019-03-26

Abstract:We analyze the electron spin relaxation rate $1/T_1$ of individual ion-implanted $^{31}$P donors, in a large set of metal-oxide-semiconductor (MOS) silicon nanoscale devices, with the aim of identifying spin relaxation mechanisms peculiar to the environment of the spins. The measurements are conducted at low temperatures ($T\approx 100$~mK), as a function of external magnetic field $B_0$ and donor electrochemical potential $\mu_{\rm D}$. We observe a magnetic field dependence of the form $1/T_1\propto B_0^5$ for $B_0\gtrsim 3\,$ T, corresponding to the phonon-induced relaxation typical of donors in the bulk. However, the relaxation rate varies by up to two orders of magnitude between different devices. We attribute these differences to variations in lattice strain at the location of the donor. For $B_0\lesssim 3\,$T, the relaxation rate changes to $1/T_1\propto B_0$ for two devices. This is consistent with relaxation induced by evanescent-wave Johnson noise created by the metal structures fabricated above the donors. At such low fields, where $T_1>1\,$s, we also observe and quantify the spurious increase of $1/T_1$ when the electrochemical potential of the spin excited state $|\uparrow\rangle$ comes in proximity to empty states in the charge reservoir, leading to spin-dependent tunneling that resets the spin to $|\downarrow\rangle$. These results give precious insights into the microscopic phenomena that affect spin relaxation in MOS nanoscale devices, and provide strategies for engineering spin qubits with improved spin lifetimes.

Mesoscale and Nanoscale Physics
Spin relaxation and coherence times for electrons at the Si/SiO2 interface

S. Shankar,A. M. Tyryshkin,Jianhua He,S. A. Lyon

DOI: https://doi.org/10.1103/PhysRevB.82.195323

2010-09-16

Abstract:While electron spins in silicon heterostructures make attractive qubits, little is known about the coherence of electrons at the Si/SiO2 interface. We report spin relaxation (T1) and coherence (T2) times for mobile electrons and natural quantum dots at a 28Si/SiO2 interface. Mobile electrons have short T1 and T2 of 0.3 us at 5 K. In line with predictions, confining electrons and cooling increases T1 to 0.8 ms at 350 mK. In contrast, T2 for quantum dots is around 10 us at 350 mK, increasing to 30 us when the dot density is reduced by a factor of two. The quantum dot T2 is shorter than T1, indicating that T2 is not controlled by T1 at 350 mK but is instead limited by an extrinsic mechanism. The evidence suggests that this extrinsic mechanism is an exchange interaction between electrons in neighboring dots.

Materials Science,Mesoscale and Nanoscale Physics
Electrical detection and magnetic-field control of spin states in phosphorus-doped silicon

H. Morishita,L. S. Vlasenko,H. Tanaka,K. Semba,K. Sawano,Y. Shiraki,M. Eto,K. M. Itoh

DOI: https://doi.org/10.1103/physrevb.80.205206

IF: 3.7

2009-11-23

Physical Review B

Abstract:Electron paramagnetic resonance of ensembles of phosphorus donors in silicon has been detected electrically with externally applied magnetic fields lower than 200 G. Because the spin Hamiltonian was dominated by the contact hyperfine term rather than by the Zeeman terms at such low magnetic fields, superposition states α|↑↓⟩+β|↓↑⟩ and −β|↑↓⟩+α|↓↑⟩ were formed between phosphorus electron and nuclear spins, and electron paramagnetic resonance transitions between these superposition states and |↑↑⟩ or |↓↓⟩ states are observed clearly. A continuous change of α and β with the magnetic field was observed with a behavior fully consistent with theory of phosphorus donors in silicon.

physics, condensed matter, applied,materials science, multidisciplinary
Conductivity freeze-out in isotopically pure -28 at millikelvin temperatures

Ben T. McAllister,Zijun C. Zhao,Jeremy F. Bourhill,Maxim Goryachev,Daniel Creedon,Brett C. Johnson,Michael E. Tobar

DOI: https://doi.org/10.1103/physrevapplied.21.064002

IF: 4.6

2024-06-05

Physical Review Applied

Abstract:Silicon is a key semiconducting material for electrical devices and hybrid quantum systems where low temperatures and zero-spin isotopic purity can enhance quantum coherence. Electrical conductivity in Si is characterized by carrier freeze out at around 40 K allowing microwave transmission, which is a key component for addressing spins efficiently in silicon quantum technologies. In this work, we report an additional sharp transition of the electrical conductivity in a Si -28 cylindrical cavity at around 1 K. This is observed by measuring microwave resonator whispering gallery mode frequencies and Q factors with changing temperature and comparing these results with finite-element models. We attribute this change to a transition from a relaxation mechanism-dominated to a resonant phononless absorption-dominated hopping conduction regime. Characterizing this regime change represents a deeper understanding of a physical phenomenon in a material of high interest to the quantum technology and semiconductor device community and the impact of these results is discussed. https://doi.org/10.1103/PhysRevApplied.21.064002 © 2024 American Physical Society

physics, applied
Decoherence of nuclear spins in the "frozen core" of an electron spin

R. Guichard,S. J. Balian,G. Wolfowicz,P. A. Mortemousque,T. S. Monteiro

DOI: https://doi.org/10.1103/PhysRevB.91.214303

2015-05-13

Abstract:Hybrid qubit systems combining electronic spins with nearby ("proximate") nuclear spin registers offer a promising avenue towards quantum information processing, with even multi-spin error correction protocols recently demonstrated in diamond. However, for the important platform offered by spins of donor atoms in cryogenically-cooled silicon,decoherence mechanisms of $^{29}$Si proximate nuclear spins are not yet well <a class="link-external link-http" href="http://understood.The" rel="external noopener nofollow">this http URL</a> reason is partly because proximate spins lie within a so-called "frozen core" region where the donor electronic hyperfine interaction strongly suppresses nuclear dynamics. We investigate the decoherence of a central proximate nuclear qubit arising from quantum spin baths outside, as well as inside, the frozen core around the donor electron. We consider the effect of a very large nuclear spin bath comprising many ($\gtrsim 10^8$) weakly contributing pairs outside the frozen core. We also propose that there may be an important contribution from a few (of order $100$) symmetrically sited nuclear spin pairs ("equivalent pairs"), which were not previously considered as their effect is negligible outside the frozen core. If equivalent pairs represent a measurable source of decoherence, nuclear coherence decays could provide sensitive probes of the symmetries of electronic wavefunctions. For the phosphorus donor system, we obtain $T_{2n}$ values of order 1 second for both the "far bath" and "equivalent pair" models, confirming the suitability of proximate nuclei in silicon as very long-lived spin qubits.

Quantum Physics,Mesoscale and Nanoscale Physics
All-Electrical Readout of Coherently Controlled Spins in Silicon Carbide

C. T.-K. Lew,V. K. Sewani,N. Iwamoto,T. Ohshima,J. C. McCallum,and B. C. Johnson

DOI: https://doi.org/10.1103/physrevlett.132.146902

IF: 8.6

2024-04-05

Physical Review Letters

Abstract:Spin defects in silicon carbide are promising candidates for quantum sensing applications as they exhibit long coherence times even at room temperature. However, spin readout methods that rely on fluorescence detection can be challenging due to poor photon collection efficiency. Here, we demonstrate coherent spin control and all-electrical readout of a small ensemble of spins in a SiC junction diode using pulsed electrically detected magnetic resonance. A lock-in detection scheme based on a three stage modulation cycle is implemented, significantly enhancing the signal-to-noise ratio. This technique enabled observation of coherent spin dynamics, specifically Rabi spin nutation, spin dephasing, and spin decoherence. The use of these protocols for magnetometry applications is evaluated. https://doi.org/10.1103/PhysRevLett.132.146902 © 2024 American Physical Society

physics, multidisciplinary
Coherence limit due to hyperfine interaction with nuclei in the barrier material of Si spin qubits

Lukas Cvitkovich,Peter Stano,Christoph Wilhelmer,Dominic Waldhör,Daniel Loss,Yann-Michel Niquet,Tibor Grasser

2024-05-17

Abstract:On the quest to understand and reduce environmental noise in Si spin qubits, hyperfine interactions between electron and nuclear spins impose a major challenge. Silicon is a promising host material because one can enhance the spin coherence time by removing spinful $^{29}$Si isotopes. As more experiments rely on isotopic purification of Si, the role of other spinful atoms in the device should be clarified. This is not a straightforward task, as the hyperfine interactions with atoms in the barrier layers are poorly understood. We utilize density functional theory to determine the hyperfine tensors of both Si and Ge in a crystalline epitaxial Si/SiGe quantum well as well as Si and O atoms in an amorphous Si/SiO$_2$ (MOS) interface structure. Based on these results, we estimate the dephasing time $T_2^*$ due to magnetic noise from the spin bath and show that the coherence is limited by interactions with non-Si barrier atoms to a few \textmu s in Si/SiGe (for non-purified Ge) and about 100\,\textmu s in Si-MOS. Expressing these numbers alternatively, in Si/SiGe the interactions with Ge dominate below 1000\,ppm of $^{29}$Si content, and, due to low natural concentration of the spinful oxygen isotopes, the interactions with oxygen in Si-MOS become significant only below 1\,ppm of $^{29}$Si content.

Mesoscale and Nanoscale Physics
Millisecond electron spin coherence time for erbium ions in silicon

Ian R. Berkman,Alexey Lyasota,Gabriele G. de Boo,John G. Bartholomew,Shao Q. Lim,Brett C. Johnson,Jeffrey C. McCallum,Bin-Bin Xu,Shouyi Xie,Nikolay V. Abrosimov,Hans-Joachim Pohl,Rose L. Ahlefeldt,Matthew J. Sellars,Chunming Yin,Sven Rogge

2023-07-25

Abstract:Spins in silicon that are accessible via a telecom-compatible optical transition are a versatile platform for quantum information processing that can leverage the well-established silicon nanofabrication industry. Key to these applications are long coherence times on the optical and spin transitions to provide a robust system for interfacing photonic and spin qubits. Here, we report telecom-compatible Er3+ sites with long optical and electron spin coherence times, measured within a nuclear spin-free silicon crystal (<0.01% 29Si) using optical detection. We investigate two sites and find 0.1 GHz optical inhomogeneous linewidths and homogeneous linewidths below 70 kHz for both sites. We measure the electron spin coherence time of both sites using optically detected magnetic resonance and observe Hahn echo decay constants of 0.8 ms and 1.2 ms at around 11 mT. These optical and spin properties of Er3+:Si are an important milestone towards using optically accessible spins in silicon for a broad range of quantum information processing applications.

Quantum Physics

Phosphorus Spin Coherence Times in Silicon at Very Low Temperatures

Line Broadening and Decoherence of Electron Spins in Phosphorus-Doped Silicon Due to Environmental 29^Si Nuclear Spins

Spectral diffusion of phosphorus donors in silicon at high magnetic field

Spin Dephasing of Fluorine-Bound Electrons in ZnSe

ESR measurements of phosphorus dimers in isotopically enriched 28Si silicon

Enhanced spin susceptibility in phosphorus-doped silicon

Electron spin echo relaxation and envelope modulation of phosphorus shallow donors in silicon

Dynamical Decoupling of Electron Spins in Phosphorus-Doped Silicon

Electron spin coherence and electron nuclear double resonance of Bi donors in natural Si

Electron Spin Coherence of Shallow Donors in Natural and Isotopically Enriched Germanium

Room Temperature Microsecond Coherence of Silicon Dangling Bonds

Microscopic control of $^{29}$Si nuclear spins near phosphorus donors in silicon

Silicon as a model ion trap: time domain measurements of donor Rydberg states

Electron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices

Spin relaxation and coherence times for electrons at the Si/SiO2 interface

Electrical detection and magnetic-field control of spin states in phosphorus-doped silicon

Conductivity freeze-out in isotopically pure -28 at millikelvin temperatures

Decoherence of nuclear spins in the "frozen core" of an electron spin

All-Electrical Readout of Coherently Controlled Spins in Silicon Carbide

Coherence limit due to hyperfine interaction with nuclei in the barrier material of Si spin qubits

Millisecond electron spin coherence time for erbium ions in silicon