Abstract:Once the periodic properties of elements were unveiled, chemical bonds could be understood in terms of the valence of atoms. Ideally, this rationale would extend to quantum dots, often termed artificial atoms, and quantum computation could be performed by merely controlling the outer-shell electrons of dot-based qubits. Imperfections in the semiconductor material, including at the atomic scale, disrupt this analogy between atoms and quantum dots, so that real devices seldom display such a systematic many-electron arrangement. We demonstrate here an electrostatically-defined quantum dot that is robust to disorder, revealing a well defined shell structure. We observe four shells (31 electrons) with multiplicities given by spin and valley degrees of freedom. We explore various fillings consisting of a single valence electron -- namely 1, 5, 13 and 25 electrons -- as potential qubits, and we identify fillings that yield a total spin-1 on the dot. An integrated micromagnet allows us to perform electrically-driven spin resonance (EDSR). Higher shell states are shown to be more susceptible to the driving field, leading to faster Rabi rotations of the qubit. We investigate the impact of orbital excitations of the p- and d-shell electrons on single qubits as a function of the dot deformation. This allows us to tune the dot excitation spectrum and exploit it for faster qubit control. Furthermore, hotspots arising from this tunable energy level structure provide a pathway towards fast spin initialisation. The observation of spin-1 states may be exploited in the future to study symmetry-protected topological states in antiferromagnetic spin chains and their application to quantum computing.

Room Temperature Microsecond Coherence of Silicon Dangling Bonds

Room temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast

Room-temperature coherent control of implanted defect spins in silicon carbide

Coherent electron transport in silicon quantum dots

Coherent spin qubit transport in silicon

Millisecond electron spin coherence time for erbium ions in silicon

All-Electrical Readout of Coherently Controlled Spins in Silicon Carbide

Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide

Quantum decoherence dynamics of divacancy spins in silicon carbide

Coherence of Spin Qubits in Silicon

Spin-orbit dynamics of single acceptor atoms in silicon

A quantum coherent spin in a two-dimensional material at room temperature

Electrical operation of hole spin qubits in planar MOS silicon quantum dots

Coherent spin control of s-, p-, d- and f-electrons in a silicon quantum dot

Rashba spin-orbit coupling and spin relaxation in silicon quantum wells

Silicon in the Quantum Limit: Quantum Computing and Decoherence in Silicon Architectures

Silicon quantum processor with robust long-distance qubit couplings

Transition metal impurities in Silicon: Computational search for a semiconductor qubit

Room temperature quantum bit storage exceeding 39 minutes using ionized donors in 28-silicon

Conditional quantum operation of two exchange-coupled single-donor spin qubits in a MOS-compatible silicon device

Non-symmetric Pauli spin blockade in a silicon double quantum dot