Rashba spin-orbit coupling and spin relaxation in silicon quantum wells

Charles Tahan,Robert Joynt

DOI: https://doi.org/10.1103/PhysRevB.71.075315

2004-07-28

Abstract:Silicon is a leading candidate material for spin-based devices, and two-dimensional electron gases (2DEGs) formed in silicon heterostructures have been proposed for both spin transport and quantum dot quantum computing applications. The key parameter for these applications is the spin relaxation time. Here we apply the theory of D'yakonov and Perel' (DP) to calculate the electron spin resonance linewidth of a silicon 2DEG due to structural inversion asymmetry for arbitrary static magnetic field direction at low temperatures. We estimate the Rashba spin-orbit coupling coefficient in silicon quantum wells and find the $T_{1}$ and $T_{2}$ times of the spins from this mechanism as a function of momentum scattering time, magnetic field, and device-specific parameters. We obtain agreement with existing data for the angular dependence of the relaxation times and show that the magnitudes are consistent with the DP mechanism. We suggest how to increase the relaxation times by appropriate device design.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to study the influence of spin - orbit coupling (SOC) on spin manipulation in two - dimensional electron gas (2DEG) and quantum dot systems in strained Si (strained silicon) quantum well (QW) structures. Specifically, the paper explores the following points:

1. **Mechanism of spin - orbit coupling**: By analyzing the two main spin - orbit coupling effects, Rashba and Dresselhaus, study how they affect the spin behavior of electrons. The Rashba effect is caused by an electric field, while the Dresselhaus effect is related to the crystal structure of the material.

2. **Realization of spin manipulation**: Use spin - orbit coupling to achieve effective spin manipulation, especially by applying an external electric field or changing the material structure parameters to achieve precise control of the spin state.

3. **Device performance optimization**: Based on the above - mentioned theoretical analysis, design and optimize semiconductor devices containing strained - silicon quantum - well structures, such as quantum dots and quantum wires, to improve their performance in spintronics applications.

### Formula summary

- **Rashba spin - orbit coupling term**:
\[
H_{\text{SO}}=\frac{\hbar}{4m^{2}c^{2}E_{z}}\vec{\sigma}\cdot(\hat{z}\times\vec{p})
\]
where $\hbar$ is the reduced Planck constant, $m$ is the electron mass, $c$ is the speed of light, $E_{z}$ is the applied electric field strength, $\vec{\sigma}$ is the Pauli matrix, $\hat{z}$ is the unit vector, and $\vec{p}$ is the momentum operator.

- **Dresselhaus spin - orbit coupling term**:
\[
H_{2D}=R(\alpha p_{x}\sigma_{y}-p_{y}\sigma_{x})\propto E_{z}(\vec{\sigma}\times\vec{p})_{z}
\]
where $\alpha$ is the Dresselhaus parameter, $p_{x}$ and $p_{y}$ are momentum components, and $\sigma_{x}$ and $\sigma_{y}$ are Pauli matrices.

- **Dresselhaus parameter**:
\[
\alpha=\frac{2PP_{z}\Delta d}{\sqrt{2\hbar E_{v1}E_{v2}}\left(\frac{1}{E_{v1}}+\frac{1}{E_{v2}}\right)}e\langle E_{z}\rangle
\]
where $P$ and $P_{z}$ are polarization intensities, $\Delta d$ is the barrier width, $E_{v1}$ and $E_{v2}$ are band energies, and $\langle E_{z}\rangle$ is the average electric field strength.

- **Spin - splitting energy**:
\[
\alpha_{D1}\approx5.1\times 10^{-6}\langle E_{z}\rangle
\]
\[
\alpha_{D2}\approx0.25\times 10^{-6}\langle E_{z}\rangle
\]

These formulas and analyses provide a theoretical basis for understanding the physical mechanism of spin - orbit coupling in strained - silicon quantum wells and its application in practical devices.