Measurement of the Spin Relaxation Time of Single Electrons in a Silicon MOS-Based Quantum Dot

M. Xiao,M. G. House,H. W. Jiang

DOI: https://doi.org/10.1103/PhysRevLett.104.096801

2009-09-16

Abstract:We report on measurements of the spin relaxation time T1 of individual electron spins in the few electron regime of a Si/SiO2-based quantum dot (QD). Energy-spectroscopy of the QD has been performed using a charge sensing technique. The spin relaxation times are subsequently measured in the time-domain by a pump-and-probe method. For the QD that contains an unpaired spin, likely only a single electron, we find that T1 depends strongly on the applied magnetic field. Possible mechanisms leading to the observed spin relaxation are discussed.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to measure the relaxation time \(T_1\) of a single - electron spin in silicon - based MOS quantum dots (Si/SiO2 - based quantum dot, QD). Specifically, the researchers are concerned with how the spin relaxation time changes with the applied magnetic field in the few - electron state, especially in quantum dots containing only one unpaired spin (possibly a single electron).

### Background and Motivation

In recent years, the potential of using the single - electron spin state in semiconductor quantum dots for quantum information processing has triggered a large number of experimental studies. The spin relaxation time \(T_1\) is an important parameter for measuring the interaction between a two - level quantum system and the environment. Previously, spin - flip transitions in GaAs - based quantum dots have been successfully measured between Zeeman sublevels induced by a magnetic field. However, similar studies have been difficult to achieve in Si - based quantum dots because these devices usually lack the required stability and controllability.

### Main Problems

1. **Measuring the Relaxation Time \(T_1\) of a Single - Electron Spin**:
- The researchers performed energy - spectrum analysis through charge - sensing techniques and measured the spin relaxation time in the time domain using the pump - probe method.

2. **The Relationship between Spin Relaxation Time and Applied Magnetic Field**:
- For quantum dots containing unpaired spins, it was found that \(T_1\) strongly depends on the applied magnetic field. This dependence may be due to spin - orbit coupling caused by phonons.

3. **Spin Relaxation Caused by Different Mechanisms**:
- Possible spin - relaxation mechanisms were discussed, especially for N = 1 quantum dots. In the presence of a magnetic field, the main mechanism is random electric - field fluctuations caused by phonons in the host material. For N = 2 quantum dots, the relaxation time is almost independent of the magnetic field and is approximately 5 milliseconds.

### Significance

This study provides important data for understanding the spin - relaxation mechanisms in silicon - based quantum dots, which is crucial for evaluating the application potential of silicon - based materials in quantum information processing. Future work may further measure the phase - coherence time \(T_2\) to verify whether the characteristics of the long - phase - coherence time in bulk silicon can be maintained in the presence of the Si/SiO2 interface.

### Formula Summary

- The measurement results of the spin - relaxation time \(T_1\) show its exponential decay relationship with the waiting time \(t_W\):
\[
A(t_W)=A_0e^{-\frac{t_W}{T_1}}
\]
where \(A(t_W)\) is the amplitude of the tunneling signal, \(A_0\) is the initial amplitude, and \(t_W\) is the waiting time.

- For N = 1 quantum dots, the spin - relaxation rate \(T_1^{-1}\) is proportional to the seventh power of the magnetic field \(B\):
\[
T_1^{-1}\propto B^7
\]

In conclusion, through precise measurement and theoretical analysis, this paper reveals the characteristics of the single - electron spin - relaxation time in silicon - based quantum dots and its dependence on the applied magnetic field, laying the foundation for further research and application.