Abstract:Once the periodic properties of elements were unveiled, chemical bonds could be understood in terms of the valence of atoms. Ideally, this rationale would extend to quantum dots, often termed artificial atoms, and quantum computation could be performed by merely controlling the outer-shell electrons of dot-based qubits. Imperfections in the semiconductor material, including at the atomic scale, disrupt this analogy between atoms and quantum dots, so that real devices seldom display such a systematic many-electron arrangement. We demonstrate here an electrostatically-defined quantum dot that is robust to disorder, revealing a well defined shell structure. We observe four shells (31 electrons) with multiplicities given by spin and valley degrees of freedom. We explore various fillings consisting of a single valence electron -- namely 1, 5, 13 and 25 electrons -- as potential qubits, and we identify fillings that yield a total spin-1 on the dot. An integrated micromagnet allows us to perform electrically-driven spin resonance (EDSR). Higher shell states are shown to be more susceptible to the driving field, leading to faster Rabi rotations of the qubit. We investigate the impact of orbital excitations of the p- and d-shell electrons on single qubits as a function of the dot deformation. This allows us to tune the dot excitation spectrum and exploit it for faster qubit control. Furthermore, hotspots arising from this tunable energy level structure provide a pathway towards fast spin initialisation. The observation of spin-1 states may be exploited in the future to study symmetry-protected topological states in antiferromagnetic spin chains and their application to quantum computing.

Giant Anisotropy of Spin Relaxation and Spin-Valley Mixing in a Silicon Quantum Dot

Electric field dependence of spin qubit in a Si-MOS quantum dot

Parametric Properties of the Electron Spin Relaxation Due to Spin-Orbit Interaction in Inas Quantum Dots

Spin Relaxation In A Si Quantum Dot Due To Spin-Valley Mixing

Spin-orbit Coupling and Electric-Dipole Spin Resonance in a Nanowire Double Quantum Dot

Spin Relaxation in Silicon Coupled Quantum Dots

Abstract Submitted for the MAR14 Meeting of The American Physical Society Spin Relaxation due to Charge Noise in Si Quantum Dot with Valley Splitting1

Parametric Properties of the Electron Spin Relaxation in InAs Quantum Dots

Coherent electron transport in silicon quantum dots

Controlling Synthetic Spin-Orbit Coupling in a Silicon Quantum Dot with Magnetic Field

Anisotropic Exchange Coupling in A Nanowire Double Quantum Dot with Strong Spin-Orbit Coupling

Relaxation of excited spin, orbital, and valley qubit states in single electron silicon quantum dots

Heavy-hole spin relaxation in quantum dots: Isotropic versus anisotropic effects

Singlet-Triplet Relaxation in Multivalley Silicon Single Quantum Dots

Measurement of the Spin Relaxation Time of Single Electrons in a Silicon MOS-Based Quantum Dot

Fast Spin-Valley-based Quantum Gates in Si with Micromagnets

Probing g-tensor reproducibility and spin-orbit effects in planar silicon hole quantum dots

An electrically driven spin qubit based on valley mixing

Coherent spin control of s-, p-, d- and f-electrons in a silicon quantum dot

Probing the Spatial Variation of the Inter-Valley Tunnel Coupling in a Silicon Triple Quantum Dot

Control Of Spin Relaxation In Semiconductor Double Quantum Dots