Abstract:Silicon vacancy centers in silicon carbide are promising candidates for storing and manipulating quantum information. Implementation of fast quantum gates is an essential requirement for quantum information processing. In a low magnetic field, the resonance frequencies of silicon vacancy spins are in the range of a few MHz, the same order of magnitude as the Rabi frequencies of typical control fields. As a consequence, the rotating wave approximation becomes invalid and nonlinear processes like the absorption and emission of multiple photons become relevant. This work focuses on multi-photon transitions of negatively charged silicon vacancies driven by a strong RF field. We present continuous-wave optically detected magnetic resonance (ODMR) spectra measured at different RF powers to identify the 1-, 2-, and 3-RF photon transitions of different types of the silicon vacancy in the 6$H$-SIC polytype. Time-resolved experiments of Rabi oscillations and free induction decays of these multiple RF photon transitions were observed for the first time. Apart from zero-field data, we also present spectra in magnetic fields with different strength and orientation with respect to the system's symmetry axis.

Relaxation dynamics of spin 3/2 silicon vacancies in 4H-Silicon carbide

Spin-Lattice Relaxation in the 6H Polytype of Silicon Carbide

Nmr Spin Lattice Relaxation in Nitrogen-Doped 6h Silicon Carbide

Multi-photon multi-quantum transitions in the spin-3/2 silicon-vacancy centers of SiC

Identification of acoustically induced spin resonances of Si vacancy centers in 4H-SiC

Optical spin initialization of spin-3/2 silicon vacancy centers in 6H-SiC at room temperature

Coherent population trapping and spin relaxation of a silicon vacancy center in diamond at mK temperatures

Rashba spin-orbit coupling and spin relaxation in silicon quantum wells

Dynamical Reorientation of Spin Multipoles in Silicon Carbide by Transverse Magnetic Fields

Room temperature coherent spin alignment of silicon vacancies in 4H- and 6H-SiC

Experimental characterization of spin-3/2 silicon vacancy centers in 6H-SiC

Theory of Spin-Acoustic Resonance for Spin-3/2 Si Vacancy with $C_{3v}$ Site Symmetry in Silicon Carbide

Identification of silicon vacancy-related electron paramagnetic resonance centers in 4H SiC

Dipolar spin relaxation of divacancy qubits in silicon carbide

Relaxation of excited spin, orbital, and valley qubit states in single electron silicon quantum dots

Spin-dependent recombination involving oxygen-vacancy complexes in silicon

Extended spin relaxation times of optically addressed vanadium defects in silicon carbide at telecommunication frequencies

Spin-orbit dynamics of single acceptor atoms in silicon

Characterization of single shallow silicon-vacancy centers in 4H-SiC

Spin-orbit coupling induced two-electron relaxation in silicon donor pairs