Abstract:Two-dimensional (2D) materials have emerged as promising platforms for quantum technologies and optoelectronics, with defects playing a crucial role in their properties. We present a comprehensive density functional theory study of silicon and carbon vacancies in monolayer silicon carbide (1L-SiC), a wide-bandgap 2D semiconductor with potential for room-temperature quantum applications. Using PBE, SCAN, r$^2$SCAN, and HSE06 functionals, we reveal distinct characteristics between Si and C vacancies. Formation energies and charge transition levels show strong functional dependence, with HSE06 consistently predicting higher values and deeper transition levels compared to PBE calculations. Electronic structure analysis demonstrates contrasting behavior: silicon vacancies create highly localized states with strong spin polarization, while carbon vacancies produce more dispersed states with weaker magnetic properties. Vacancy migration studies reveal significantly lower barriers for silicon vacancies compared to carbon vacancies, indicating higher mobility for Si vacancies at moderate temperatures. Optical properties, calculated using PBE-DFPT, show distinct charge-state dependent absorption in the far-infrared region, with positively charged states of both vacancy types demonstrating the strongest response. The complementary characteristics of Si and C vacancies - localized versus dispersed states, different magnetic properties, and distinct optical responses - suggest possibilities for defect engineering in quantum and optoelectronic applications. Our results highlight the critical importance of advanced functionals in accurately describing defect properties and provide a comprehensive framework for understanding vacancy behavior in 2D materials.

Theory of Spin-Acoustic Resonance for Spin-3/2 Si Vacancy with $C_{3v}$ Site Symmetry in Silicon Carbide

Identification of acoustically induced spin resonances of Si vacancy centers in 4H-SiC

Spin-Acoustic Control of Silicon Vacancies in 4H Silicon Carbide

Probing spin-phonon interactions in silicon carbide with Gaussian acoustics

Local vibrational modes of Si vacancy spin qubits in SiC

Anisotropic Spin-Acoustic Resonance in Silicon Carbide at Room Temperature

Theory of Field-Angle-Resolved Magnetoacoustic Resonance in Spin-Triplet Systems for Application to Nitrogen-Vacancy Centers in Diamond

Identification of silicon vacancy-related electron paramagnetic resonance centers in 4H SiC

Experimental characterization of spin-3/2 silicon vacancy centers in 6H-SiC

Dynamical Reorientation of Spin Multipoles in Silicon Carbide by Transverse Magnetic Fields

Multi-photon multi-quantum transitions in the spin-3/2 silicon-vacancy centers of SiC

Relaxation dynamics of spin 3/2 silicon vacancies in 4H-Silicon carbide

Optical spin initialization of spin-3/2 silicon vacancy centers in 6H-SiC at room temperature

Preparing squeezed spin states in a spin-mechanical hybrid system with silicon-vacancy centers

Vacancy-related color centers in twodimensional silicon carbide monolayers

Vacancy-related color centers in two-dimensional silicon carbide monolayers

Spin Polarization and Magnetic Moment in Silicon Carbide Grown by the Method of Coordinated Substitution of Atoms

Room temperature coherent spin alignment of silicon vacancies in 4H- and 6H-SiC

Nanotesla Magnetometry with the Silicon Vacancy in Silicon Carbide

Resonant Addressing and Manipulation of Silicon Vacancy Qubits in Silicon Carbide

Vacancy-Induced Quantum Properties in 2D Silicon Carbide: Atomistic insights from semi-local and hybrid DFT calculations