Abstract:We study the effects of crystal anisotropy on optical phonon resonances in the second harmonic generation (SHG) from silicon carbide (SiC) in its Reststrahl region. By comparing experiments and simulations for isotropic 3C-SiC and anisotropic 4H-SiC in two crystal cuts, we identify several pronounced effects in the nonlinear response which arise solely from the crystal anisotropy. Specifically, we demonstrate that the axial and planar transverse optical phonon resonances selectively and exclusively appear in the corresponding tensor elements of the nonlinear susceptibility, enabling observation of an intense SHG peak originating from a weak phonon mode due to zone-folding along the c-axis of 4H-SiC. Similarly, we identify an anisotropy factor $\zeta \equiv \epsilon_\perp/\epsilon_\parallel$ responsible for a steep enhancement of the transmitted fundamental fields at the axial longitudinal optical phonon frequency, resulting in strongly enhanced SHG. We develop a general recipe to extract all these features that is directly applicable to all wurtzite-structure polar dielectrics, where a very similar behavior is expected. Our model study illustrates the opportunities for utilizing the crystal anisotropy for selectively enhancing nonlinear-optical effects in polar dielectrics, which could potentially be extended to built-in anisotropy in artificially designed hybrid materials.

Anisotropic Spin-Acoustic Resonance in Silicon Carbide at Room Temperature

Spin-Acoustic Control of Silicon Vacancies in 4H Silicon Carbide

Identification of acoustically induced spin resonances of Si vacancy centers in 4H-SiC

Probing spin-phonon interactions in silicon carbide with Gaussian acoustics

Theory of Spin-Acoustic Resonance for Spin-3/2 Si Vacancy with $C_{3v}$ Site Symmetry in Silicon Carbide

Optically detected spin-mechanical resonance in silicon carbide membranes

Dynamical Reorientation of Spin Multipoles in Silicon Carbide by Transverse Magnetic Fields

Local vibrational modes of Si vacancy spin qubits in SiC

Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide

Room temperature coherent spin alignment of silicon vacancies in 4H- and 6H-SiC

Multi-photon multi-quantum transitions in the spin-3/2 silicon-vacancy centers of SiC

Room-temperature coherent control of implanted defect spins in silicon carbide

Room-temperature quantum oscillations of static magnetic susceptibility of silicon-carbide epitaxial layers grown on a silicon substrate by the method of the coordinated substitution of atoms

Room temperature coherence properties and 14N nuclear spin readout of NV centers in 4H–SiC

Effects of Crystal Anisotropy on Optical Phonon Resonances in the Mid-Infrared Second Harmonic Response of SiC

Room-temperature near-infrared silicon carbide nanocrystalline emitters based on optically aligned spin defects

Engineering local strain for single-atom nuclear acoustic resonance in silicon

Semi-insulating 4H-SiC lateral bulk acoustic wave resonators

Contactless excitation of acoustic resonance in insulating wafers

All-Electrical Readout of Coherently Controlled Spins in Silicon Carbide