Abstract:Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homogeneous properties. Here, isotope concentration depth profiles in a SiGe/28Si/SiGe heterostructure are analyzed with atom probe tomography (APT) and time-of-flight secondary-ion mass spectrometry down to their respective limits of isotope concentrations and depth resolution. Spin-echo dephasing times T 2 echo = 128 μ s $T_2^\mathbf {echo}=128 \,\umu\mathrm{s}$ and valley energy splittings EVS around 200 μ e V $200 \,\umu\mathrm{e\mathrm{V}}$ have been observed for single spin qubits in this quantum well (QW) heterostructure, pointing toward the suppression of qubit decoherence through hyperfine interaction with crystal host nuclear spins or via scattering between valley states. The concentration of nuclear spin-carrying 29Si is 50 ± 20ppm in the 28Si QW. The resolution limits of APT allow to uncover that both the SiGe/28Si and the 28Si/SiGe interfaces of the QW are shaped by epitaxial growth front segregation signatures on a few monolayer scale. A subsequent thermal treatment, representative of the thermal budget experienced by the heterostructure during qubit device processing, broadens the top SiGe/28Si QW interface by about two monolayers, while the width of the bottom 28Si/SiGe interface remains unchanged. Using a tight-binding model including SiGe alloy disorder, these experimental results suggest that the combination of the slightly thermally broadened top interface and of a minimal Ge concentration of 0.3 $0.3$ % in the QW, resulting from segregation, is instrumental for the observed large E VS = 200 μ e V $E_\mathrm{VS}=200 \,\umu\mathrm{e\mathrm{V}}$ . Minimal Ge additions <1%, which get more likely in thin QWs, will hence support high EVS without compromising coherence times. At the same time, taking thermal treatments during device processing as well as the occurrence of crystal growth characteristics into account seems important for the design of reproducible qubit properties.

Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28

Hyperfine Clock Transitions of Bismuth Donors in Silicon Detected by Spin Dependent Recombination

Isotopic enrichment of silicon by high fluence $^{28}$Si$^-$ ion implantation

Induced spin-orbit coupling in silicon thin films by bismuth doping

Electron spin coherence and electron nuclear double resonance of Bi donors in natural Si

Highly ${ }^{28} \mathrm{Si}$ Enriched Silicon by Localised Focused Ion Beam Implantation

Improved placement precision of implanted donor spin qubits in silicon using molecule ions

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Coherent control and high-fidelity readout of chromium ions in commercial silicon carbide

Electron paramagnetic resonance of boron acceptors in isotopically purified silicon

Measurement of enhanced spin-orbit coupling strength for donor-bound electron spins in silicon

Mechanism of electron-beam manipulation of single dopant atoms in silicon

Spin-dependent recombination at arsenic donors in ion-implanted silicon

Critical issues in the formation of quantum computer test structures by ion implantation

Spectroscopic investigation of quantum confinement effects in ion implanted silicon-on-sapphire films

Spin-orbit dynamics of single acceptor atoms in silicon

Study of the spin-pump-induced inverse spin-Hall effect in Bi doped n-type Si

Erbium implanted silicon for solid-state quantum technologies

Microstructure of bismuth centers in silicon before and after irradiation with 15 MeV protons

Atomistic Compositional Details and Their Importance for Spin Qubits in Isotope-Purified Silicon Quantum Wells

Millisecond electron spin coherence time for erbium ions in silicon