Abstract:The unique properties of topological insulators such as Bi2Se3 are intriguing for their potential implementation in novel device architectures for low power and defect-tolerant logic and memory devices. Recent improvements in the synthesis of Bi2Se3 have positioned researchers to fabricate new devices to probe the limits of these materials. The fabrication of such devices, of course, requires etching of the topological insulator, in addition to other materials including gate oxides and contacts which may impact the topologically protected surface states. In this paper, we study the impact of He+ sputtering and inductively coupled plasma Cl2 and SF6 reactive etch chemistries on the physical, chemical, and electronic properties of Bi2Se3. Chemical analysis by X-ray photoelectron spectroscopy tracks changes in the surface chemistry and Fermi level, showing preferential removal of Se that results in vacancy-induced n-type doping. Chlorine-based chemistry successfully etches Bi2Se3 but with residual Se-Se bonding and interstitial Cl species remaining after the etch. The Se vacancies and residuals can be removed with postetch anneals in a Se environment, repairing Bi2Se3 nearly to the as-grown condition. Critically, in each of these cases, angle-resolved photoemission spectroscopy (ARPES) reveals that the topologically protected surface states remain even after inducing significant surface disorder and chemical changes, demonstrating that topological insulators are quite promising for defect-tolerant electronics. Changes to the ARPES intensity and momentum broadening of the surface states are discussed. Fluorine-based etching aggressively reacts with the film resulting in a relatively thick insulating film of thermodynamically favored BiF3 on the surface, prohibiting the use of SF6-based etching in Bi2Se3 processing.

Preparation of clean surfaces and Se vacancy formation in Bi$_{2}$Se$_{3}$ by ion bombardment and annealing

Termination of Single Crystal Bi2Se3 Surfaces Prepared by Various Methods

Halogen adsorption and reaction with Bi$_2$(Se,Te)$_3$ and Bi/Bi$_2$(Se,Te)$_3$

Impact of Etch Processes on the Chemistry and Surface States of the Topological Insulator Bi2Se3

A detailed analysis of impact collision ion scattering spectroscopy of bismuth selenide

Surface Termination of CleavedBi2Se3Investigated by Low Energy Ion Scattering

Topological Surface State Evolution in Bi_2Se_3 Via Surface Etching

Topological Surface State Evolution in Bi$_2$Se$_3$ via Surface Etching

Stability Of The Bi2se3(111) Topological State: Electron-Phonon And Electron-Defect Scattering

Electronic Structure Evolution at DBBA/Au(111) Interface W/O Bismuth Insertion Layer

Topological Surface State Evolution in Bi2Se3 via Surface Etching

Persistence of the Topological Surface States in Bi2Se3 Against Ag Intercalation at Room Temperature

Formation of well-ordered surfaces of Bi2-xSbxTe3-ySey topological insulators using wet chemical treatment

Annealing-Induced Bi Bilayer on Bi2Te3 Investigated Via Quasi-Particle-Interference Mapping

Topological Surface State Evolution in Bi 2 Se 3 via Surface Etching

Single Crystal Synthesis and Surface Electronic Structure of Bi1.993Cr0.007Se3

Atomic layer deposition and characterization of Bi1Se1 thin films

The Electronic Structure of Clean and Adsorbate-Covered Bi2se3: an Angle-Resolved Photoemission Study

In Situ Monitoring of Resistivity and Carrier Concentration During Molecular Beam Epitaxy of Topological Insulator Bi2Se3

A strategy to eliminate selenium oxide islands formed on the ZnSe/GaAs epilayer

Communication: Surface Stability and Topological Surface States of Cleaved Bi2se3: First-Principles Studies