Abstract:Two-dimensional (2D) atomic-layered heterostructures stacked by van der Waals interactions recently introduced new research fields, which revealed novel phenomena and provided promising applications for electronic, optical, and optoelectronic devices. In this study, we report the van der Waals epitaxial growth of high-quality atomically thin Bi2Se3 on single crystalline hexagonal boron nitride (h-BN) by chemical vapor deposition. Although the in-plane lattice mismatch between Bi2Se3 and h-BN is approximately 65%, our transmission electron microscopy analysis revealed that Bi2Se3 single crystals epitaxially grew on h-BN with two commensurate states; that is, the (1̅21̅0) plane of Bi2Se3 was preferably parallel to the (1̅100) or (1̅21̅0) plane of h-BN. In the case of the Bi2Se3 (2̅110) ∥ h-BN (11̅00) state, the Moiré pattern wavelength in the Bi2Se3/h-BN superlattice can reach 5.47 nm. These naturally formed thin crystals facilitated the direct assembly of h-BN/Bi2Se3/h-BN sandwiched heterostructures without introducing any impurity at the interfaces for electronic property characterization. Our quantum capacitance (QC) measurements showed a compelling phenomenon of thickness-dependent topological phase transition, which was attributed to the coupling effects of two surface states from Dirac Fermions at/or above six quintuple layers (QLs) to gapped Dirac Fermions below six QLs. Moreover, in ultrathin Bi2Se3 (e.g., 3 QLs), we observed the midgap states induced by intrinsic defects at cryogenic temperatures. Our results demonstrated that QC measurements based on h-BN/Bi2Se3/h-BN sandwiched structures provided rich information regarding the density of states of Bi2Se3, such as quantum well states and Landau quantization. Our approach in fabricating h-BN/Bi2Se3/h-BN sandwiched device structures through the combination of bottom-up growth and top-down dry transferring techniques can be extended to other two-dimensional layered heterostructures.

Atomic layer deposition and characterization of Bi1Se1 thin films

Van Der Waals Epitaxial Growth of Atomically Thin Bi2se3 and Thickness-Dependent Topological Phase Transition

Molecular Beam Epitaxy and Electronic Structure of Atomically Thin Oxyselenide Films.

Structural and Electrical Characterization of Bi2Se3 Nanostructures Grown by Metalorganic Chemical Vapor Deposition

The van der Waals epitaxy of Bi2Se3 on the vicinal Si(111) surface: An approach for preparing high-quality thin films of a topological insulator

Structural, Optical, Electrical, and Thermoelectric Properties of Bi2Se3 Films Deposited at a High Se/Bi Flow Rate

Growth and structural characterisation of Sr-doped Bi2Se3 thin films

Kinetics-controlled Epitaxial Growth and Bipolar Transport Properties of Semimetal Bi4Se3

Controllable and Fast Growth of High-Quality Atomically Thin and Atomically Flat Bi_2O_2Se Films

Epitaxial Growth of High Mobility Bi2Se3 Thin Films on CdS

Interfacial Distortion of Sb 2 Te 3 -Sb 2 Se 3 Multilayers via Atomic Layer Deposition for Enhanced Thermoelectric Properties

Epitaxial Growth of Bi 2 Se 3 Topological Insulator Thin Films on Si ( 111 )

Controllable and Fast Growth of High-Quality Atomically Thin and Atomically Flat Bi$_2$O$_2$Se Films

Van der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface: An approach to prepare high-quality thin films of topological insulator

Atomic-level structural and chemical analysis of Cr-doped Bi2Se3 thin films

Growth and Structural Characterisation of Sr-doped Bi 2 Se 3 Thin Films

Preparation and investigation of structure, optical, nonlinear optical and thermoelectric properties of Bi2Se3 thin film

Bi[Se‐(2‐Me2NC6H4)]3: Single Source Precursor for Preparing Pure‐Phase, 2‐Dimensional Bismuth Selenide Films

Coherent Heteroepitaxy of Bi2Se3 on GaAs (111)B

Exploring the high dielectric performance of Bi2SeO5: from bulk to bilayer and monolayer

Bi$_{2}$Se$_{3}$ thin films heteroepitaxially grown on $α$-RuCl$_{3}$