Abstract:Using positive muons as local probes implanted at low energy enables gathering information about the material of interest with nanometer depth resolution (low energy muon spin rotation spectroscopy (LE-$\mu$SR). In this work, we leverage the capabilities of LE-$\mu$SR to perform an investigation of the SiO$_\text{2}$-SiC interface. Thermally oxidized samples are investigated before and after annealing in nitric oxide (NO) and argon (Ar) ambience. Thermal oxidation is found to result in structural changes both in the SiC crystal close to the interface and at the interface itself. Annealing in NO environment is known to passivate the defects leading to a reduction of the density of interface traps (D$_{it}$); LE-$\mu$SR further reveals that the NO annealing results in a thin layer of high carrier concentration in SiC, extending to more than 50 nm depending on the annealing conditions. We also see indications of Si vacancy (V$_{Si}$) formation in SiC after thermal oxidation. Following NO annealing, nitrogen occupies the V$_{Si}$ sites, leading to the reduction in D$_{it}$ and at the same time, creating a charge-carrier-rich region near the interface. By comparing the LE-$\mu$SR data from a sample with known doping density, we perform a high-resolution quantification of the free carrier concentration near the interface after NO annealing and discuss the origin of observed near-surface variations. Finally, the depletion of carriers in a MOS capacitor in the region below the interface is shown using LE-$\mu$SR. The NO annealed sample shows the narrowest depletion region, likely due to the reduced D$_{it}$ and charge-carrier-rich region near the interface. Our findings demonstrate the many benefits of utilizing LE-$\mu$SR to study critical regions of semiconductor devices that have been inaccessible with other techniques while retaining nanoscale depth resolution and a non-destructive approach.

Resolving buried interfaces with Low Energy Ion Scattering

Investigation of the SiO2-SiC interface using low energy muon spin rotation spectroscopy

Measurement and Simulation of Ultra-Low-Energy Ion-Solid Interaction Dynamics

Scanning Electrochemical Cell Microscopy Platform with Local Electrochemical Impedance Spectroscopy.

Application of Ion Scattering Spectroscopy to Investigations of the Interaction Between the Active Component and Carrier in Supported Catalysts

Ultra-thin film and interface analysis of high-k dielectric materials employing Time-Of-Flight Medium Energy Ion Scattering (TOF-MEIS)

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

Electrochemical Impedance Spectroscopy for Quantitative Interface State Characterization of Planar and Nanostructured Semiconductor-Dielectric Interfaces

Local inhomogeneities resolved by scanning probe techniques and their impact on local 2DEG formation in oxide heterostructures

Quantitative Chemically-Specific Coherent Diffractive Imaging of Buried Interfaces using a Tabletop EUV Nanoscope

Nanoscale Raman Characterization of a 2D Semiconductor Lateral Heterostructure Interface

A TEM study of Si-SiO2 interfaces in silicon nanodevices

Improved in-situ characterization of electrochemical interfaces using metasurface-driven surface-enhanced infrared absorption spectroscopy

DC-electric-field-induced and low-frequency electromodulation second-harmonic generation spectroscopy of Si(001)-SiO$_2$ interfaces

Direct in situ characterization of Ge surface segregation in strained Si1−xGex epitaxial thin films

In-situ quantification of the surface roughness for facile fabrications of atomically smooth thin films

Element-specific, non-destructive profiling of layered heterostructures

Medium Energy Ion Scattering of Gr on SiC(0001) and Si(100)

High Sensitivity of Fluorine Gas-Assisted FIB-TOF-SIMS for Chemical Characterization of Buried Sublayers in Thin Films

Monte Carlo Simulation Study of Reflection Electron Energy Loss Spectroscopy of an Fe/Si Overlayer Sample

Direct Opto-Electronic Imaging of 2D Semiconductor - 3D Metal Buried Interfaces