Direct Opto-Electronic Imaging of 2D Semiconductor - 3D Metal Buried Interfaces

Kiyoung Jo,Pawan Kumar,Joseph Orr,Surendra B. Anantharaman,Jinshui Miao,Michael Motala,Arkamita Bandyopadhyay,Kim Kisslinger,Christopher Muratore,Vivek B. Shenoy,Eric Stach,Nicholas Glavin,Deep Jariwala

DOI: https://doi.org/10.1021/acsnano.1c00708

2021-01-29

Abstract:The semiconductor-metal junction is one of the most critical factors for high performance electronic devices. In two-dimensional (2D) semiconductor devices, minimizing the voltage drop at this junction is particularly challenging and important. Despite numerous studies concerning contact resistance in 2D semiconductors, the exact nature of the buried interface under a three-dimensional (3D) metal remains unclear. Herein, we report the direct measurement of electrical and optical responses of 2D semiconductor-metal buried interfaces using a recently developed metal-assisted transfer technique to expose the buried interface which is then directly investigated using scanning probe techniques. We characterize the spatially varying electronic and optical properties of this buried interface with < 20 nm resolution. To be specific, potential, conductance and photoluminescence at the buried metal/MoS$_2$ interface are correlated as a function of a variety of metal deposition conditions as well as the type of metal contacts. We observe that direct evaporation of Au on MoS$_2$ induces a large strain of ~5% in the MoS$_2$ which, coupled with charge transfer, leads to degenerate doping of the MoS$_2$ underneath the contact. These factors lead to improvement of contact resistance to record values of 138 kohm-um, as measured using local conductance probes. This approach was adopted to characterize MoS$_2$-In/Au alloy interfaces, demonstrating contact resistance as low as 63 kohm-um. Our results highlight that the MoS$_2$/Metal interface is sensitive to device fabrication methods, and provides a universal strategy to characterize buried contact interfaces involving 2D semiconductors.

Mesoscale and Nanoscale Physics,Materials Science,Applied Physics,Optics

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is: **How to directly measure and characterize the electrical and optical properties of the buried interface between two - dimensional semiconductors (2D) and three - dimensional metals (3D) in order to optimize the contact resistance and improve device performance**.

Specifically, the paper focuses on how to minimize the voltage drop at the metal - semiconductor junction in two - dimensional semiconductor devices. Although a large number of studies have explored the contact resistance problem in 2D semiconductors, there is still a lack of clear understanding of the specific properties of the buried interface, especially the interface characteristics under 3D metals. For this reason, the authors developed a new metal - assisted transfer technique to expose the buried interface and directly measure and characterize it through scanning probe techniques (such as Kelvin probe force microscopy, conductive atomic force microscopy, tip - enhanced Raman spectroscopy, and photoluminescence spectroscopy, etc.).

### Main research contents:
1. **Interface exposure and characterization**: Through the metal - assisted transfer technique, the buried interface is exposed, and then high - resolution scanning probe techniques are used to directly measure it.
2. **Correlation between electrical and optical properties**: Combining multiple scanning probe techniques, a comprehensive analysis of the electrical (such as electric potential, conductivity) and optical (such as photoluminescence, Raman scattering) properties of the interface is carried out.
3. **Influence of different metal deposition conditions**: The influence of different metal deposition conditions (such as evaporation, sputtering, etc.) and different metal types on the interface characteristics is studied.
4. **Strain and doping effects**: It is found that directly evaporating gold (Au) on MoS₂ will induce about 5% strain and cause degenerative doping of MoS₂, thereby significantly reducing the contact resistance.

### Key findings:
- **Direct evaporation of Au**: It will cause about 5% strain on the MoS₂ surface and cause degenerative doping of MoS₂ through charge transfer, so that the contact resistance is reduced to the lowest recorded value (138 kΩ µm).
- **In/Au alloy contact**: After further optimization, the contact resistance can be as low as 63 kΩ µm.
- **Interface uniformity**: The interface formed by directly evaporating metal is more uniform than the van der Waals contact and has better electrical and optical properties.

Through these studies, the authors provide new ideas and methods for understanding and optimizing the contact between 2D semiconductors and 3D metals, which is of great significance for the design and manufacturing of high - performance electronic devices in the future.