Abstract:Amorphous oxide semiconductors are receiving significant attention due to their relevance for large area electronics. Their disordered microscopic structure causes the formation of band tails in the density of states (DOS) that strongly affect charge transport properties. Bandtail properties are crucial to understand for optimizing thin film device performance. Among the available techniques to measure the DOS, KPFM is exceptional as it enables precise local electronic investigations combined with microscopic imaging. However, a model to interpret KPFM spectroscopy data on amorphous semiconductors of finite thickness is lacking. To address this issue, we provide an analytical solution to the Poisson's equation for a metal-insulator-semiconductor (MIS) junction interacting with the AFM tip. The solution enables us to fit experimental data for semiconductors with finite thickness and obtain the DOS parameters, such as band tail width (E_t), doping density (N_D), and flat band potential. To demonstrate our method, we perform KPFM experiments on Indium-Gallium-Zinc Oxide (IGZO) thin film transistors (IGZO-TFTs). DOS parameters compare well to values obtained with photocurrent spectroscopy. We demonstrate the potentials of the developed method by investigating the impact of ionizing radiation on DOS parameters and TFT performance. Our results provide clear evidence that the observed shift in threshold voltage is caused by static charge in the gate dielectric leading to a shift in flat band potential. Band-tails and doping density are not affected by the radiation. The developed methodology can be easily translated to different semiconductor materials and paves the way towards quantitative microscopic mapping of local DOS parameters in thin film devices.

Ultra-thin film and interface analysis of high-k dielectric materials employing Time-Of-Flight Medium Energy Ion Scattering (TOF-MEIS)

In Situ Time-Resolved Attenuated Total Reflectance Infrared Spectroscopy for Probing Metal-Organic Framework Thin Film Growth.

Microstructure, Optical and Electrical Properties of Sputtered HfTiO High-K Gate Dielectric Thin Films

Microstructure Optimization and Optical and Interfacial Properties Modulation of Sputtering-Derived Hfo2 Thin Films by Tio2 Incorporation

High Sensitivity of Fluorine Gas-Assisted FIB-TOF-SIMS for Chemical Characterization of Buried Sublayers in Thin Films

Sputter-deposition of ultra-thin film stacks from EUROFER97 and tungsten: characterisation and interaction with low-energy D and He ions

Resolving buried interfaces with Low Energy Ion Scattering

Characterization of the Interface Between the Hf-based High-K Thin Film and the Si Using Spatially Resolved Electron Energy-Loss Spectroscopy.

Low-Energy Electron Inelastic Mean Free Path of Graphene Measured by a Time-of-Flight Spectrometer

Experimental determination of reference intensity ratio essential for accurate thickness measurement of HfO2 ultrathin films by XPS

Hfo2-Tio2 Ultra-Thin Gate Dielectric by Rf Sputtering

THz time-domain spectroscopic investigations of thin films

Accurate determination of band tail properties in amorphous semiconductor thin film with Kelvin Probe Force Microscopy

Spectroscopic Ellipsometry Characterization of High‐k films on SiO2/Si

Characterization of Ultrathin Conductive Films Using a Simplified Approach for Terahertz Time-Domain Spectroscopic Ellipsometry

A fully automatized method for the unambiguous wavelength-by-wavelength determination of the thickness and optical property of a very thin film with a transparent range

Beem Studies On Metal High K-Dielectric Hfo2 Interfaces

Characterizing dielectric properties of ultra-thin films using superconducting coplanar microwave resonators

Extraction of Equivalent Oxide Thickness for HfO2 High k Gate Dielectrics

FIB’n’SIMS – Advanced Depth Analysis on Hybrid Organic-Inorganic Nanomaterials

Unveiling the nanomorphology of HfN thin films by ultrafast reciprocal space mapping