Beem Studies On Metal High K-Dielectric Hfo2 Interfaces

Yi Zheng,Cedric Troadec,Andrew T. S. Wee,K. L. Pey,Sean J. O'Shea,N. Chandrasekhar
DOI: https://doi.org/10.1088/1742-6596/61/1/266
2007-01-01
Abstract:In this work, we present an investigation of the Pt and Pd-HfO2-p-Si interfaces using ballistic electron emission microscopy. The band alignment of the Pt-HfO2-p-Si structure is inferred. The potential drop in the oxide has been determined. Oscillations in the collector current with increasing bias enable estimation of the effective mass of electrons in HfO2 in the range of 0.35-0.44 m(0). Stressing studies indicate modest resistance to stressing, with a threshold of 0.5 nC for damage to the base/oxide. Our work is the first successful application of the BEEM technique to metal-high K dielectric interfaces.
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