Abstract:TiO2-doped HfO2 gate dielectric thin films have been deposited on Si(100) substrates by RF sputtering. The component, morphology, structure, optical and interfacial properties of Hf-1 xTixO2 films related to TiO2 concentration are systematically investigated by atomic force microscope (AFM), X-ray diffraction (XRD), spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS), and Fourier transformation infrared (FTIR). By employing Cauchy-Urbach model, the optical constants, such as refractive index (n), extinction coefficient (k), absorption coefficient (alpha), and optical band gap (E-g) have been determined precisely. Measurements from XRD have confirmed that TiO2 incorporating into HfO2 films leads to the increase of the crystallization temperature of HfO2 films with increasing the TiO2 concentration. SE analyses have indicated that reduction in band gap and refractive index has been observed with increasing the TiO2 component in Hf-1 xTixO2 films. The increase in Urbach parameter E-U with the increase of TiO2 concentration also suggests the rise in disorder for Hf-1 xTixO2 films. FTIR measurements for Hf-1 xTixO2/Si gate stack indicate the existence of the interfacial layer regardless of the TiO2 concentration. For the 9% TiO2-doped HfO2 samples, the shift in FTIR characteristic peak suggests the formation of the silicate layer, which leads to the suppressed interfacial layer growth during deposition. As a result, it can be conclude that the TiO2 component in Hf-1 xTixO2 films should be controlled precisely to guarantee interfacial properties of Hf-1 xTixO2/Si gate stacks. (C) 2014 Elsevier B.V. All rights reserved.

Influence of Preparing Process on Total-Dose Radiation Response of High-K Hf-Based Gate Dielectrics

Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

Influence of Nitrogen Element on Total-Dose Radiation Response of High-K Hf-based Dielectric Films

Microstructure Optimization and Optical and Interfacial Properties Modulation of Sputtering-Derived Hfo2 Thin Films by Tio2 Incorporation

Microstructure, Optical and Electrical Properties of Sputtered HfTiO High-K Gate Dielectric Thin Films

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Study of Hfsio Film Prepared by Electron Beam Evaporation for High-K Gate Dielectric Applications

Baking-Temperature-Modulated Optical and Electrical Properties of Hftiox Gate Dielectrics Via Sol-Gel Method

Modulation of the structural and optical properties of sputtering-derived HfO2 films by deposition power

Effects of Nitrogen Element on Total-Dose Irradiation Response of High-K Hf-based Dielectric Films

The Post-Deposition Anneal Effects On The Electrical Properties Of Hfo2 Gate Dielectric Deposited By Ion Beam Sputtering At Room Temperature

Preparation of High-Quality Hf-Aluminate Films by Eb-Pvd

Total-Dose Radiation Response of HfLaO Films Prepared by Plasma Enhanced Atomic Layer Deposition

Fabrication and Characterization of Pulsed Laser Deposited Hfo2 Films for High-K Gate Dielectric Applications

Comparison of Hfalo, Hfo2/Al2o3, and Hfo2 on N-Type Gaas Using Atomic Layer Deposition

Preparation and Property of High-k HfO_2 Gate Dielectric Materials

Effect of Gate Electrodes on Structure and Electrical Properties of Sputtered Hfo2 Thin Films

Interfacial and Electrical Characterization of HfO2 Gate Dielectric Film with a Blocking Layer of Al2O3

Comparative Study of Pulsed Laser Deposited HfO 2 and Hf–aluminate Films for High- K Gate Dielectric Applications

Total-Dose Radiation Response and and Post-Irradiation Annealing Response of Hafnium Capacitors