Abstract:Hafnium oxide (HfO 2 ) thin film has received tremendous research interests as a passivation layer of crystalline silicon (c-Si) due to its thermal stability and positive fixed charges. HfO 2 films were prepared both on P-type and N-type polished c-Si via a remote plasma atomic layer deposition process. Post annealing was carried out in oxygen, atmosphere (Air) and nitrogen (N 2 ) at temperature of 500 °C. Electrical characterization was done through a regular metal-insulator-semiconductor structure and capacitance-voltage measurements. The oxide fixed charge (Q f ) and density of interface traps (D it ) between HfO 2 and c-Si were extracted. Q f and D it reveal the potential of HfO 2 for field effect and chemical passivation, respectively. Effective lifetime measurements by microwave photoconductivity decay in Si wafers passivated with HfO 2 were applied to characterize surface recombination velocity to directly evaluate the overall passivation quality. The impacts of post-annealing gas ambient on passivation qualities on Si by HfO 2 thin films are systematically studied. The results show that N 2 -annealed sample possesses the highest Q f of 1.73 × 10 12 cm −2 and therefore provides the best field effect passivation. Air-annealed sample has lowest D it of 1.0 × 10 12 eV −1 cm −2 and therefore provides the best chemical passivation. Air-annealed sample possesses the highest effective lifetime of 290 μs at injection level of 1 × 10 15 cm −3 , which means that good passivation was obtained for N-type Si wafer passivated with HfO 2 after annealing in Air.

Investigation of the Electrical Performance of Hfo2 Dielectrics Deposited on Passivated Germanium Substrates

Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

Evolution of Interface Chemistry and Dielectric Properties of Hfo2/Ge Gate Stack Modulated by Gd Incorporation and Thermal Annealing

Preparation of High-Quality Gate Dielectrics for Ge MOSFET's in Wet Ambients

Atomic Layer Deposition of HfO2 Gate Dielectric with Surface Treatments and Post-metallization Annealing for Germanium MOSFETs

Interfacial Properties of Hfo2 Dielectric Film on Ge Substrate

Temperature Dependent Interfacial and Electrical Characteristics During Atomic Layer Deposition and Annealing of HfO2 Films in P-Gaas Metal–oxide–semiconductor Capacitors

Comparison Of The Interfacial And Electrical Properties Of Hfalo Films On Ge With S And Geo2 Passivation

Effective electrical passivation of Ge(100) for HfO 2 gate dielectric layers using O 2 plasma

Effect on passivation mechanism and properties of HfO 2 /crystalline-Si interface under different annealing atmosphere

The Post-Deposition Anneal Effects On The Electrical Properties Of Hfo2 Gate Dielectric Deposited By Ion Beam Sputtering At Room Temperature

Electrical Properties and Interfacial Studies of Hf x Ti1- xO₂ High Permittivity Gate Insulators Deposited on Germanium Substrates

TiO2/HfO2 Bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeO xNy passivation layer

Comparison of Hfalo, Hfo2/Al2o3, and Hfo2 on N-Type Gaas Using Atomic Layer Deposition

Characterization of Hfo2/Al2o3 Gate Dielectric Nanometer-Stacks Grown by Atomic Layer Deposition on Ge Substrates

Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric

Fabrication and characteristics of high-K HfO2 gate dielectrics on n- germanium

Electrical Properties and Interfacial Studies of HfxTi1–xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates

Improved interfacial and electrical properties of atomic layer deposition HfO2 films on Ge with La2O3 passivation

Interfacial and Electrical Characterization of HfO2 Gate Dielectric Film with a Blocking Layer of Al2O3