Hfo2-Tio2 Ultra-Thin Gate Dielectric by Rf Sputtering

G. X. Li,X. F. Chen,W. Ren,P. Shi,X. Q. Wu,O. K. Tan,W. G. Zhu,X. Yao
DOI: https://doi.org/10.1080/00150193.2010.492737
2011-01-01
Ferroelectrics
Abstract:High-K HfO2-TiO2 ultra-thin films with sub-nanometer laminate HfO2/TiO2 stacks were deposited on p-type (100) silicon wafer using magnetron sputtering at 300 degrees C. The as-deposited films are amorphous which could be sustained up to 900 degrees C in air. The off-stoichiometric films show further improved thermal stability due to obstacled crystallization process. It is revealed that Hf-rich films trends to form thicker interfacial layer due to the stability of HfO2, whereas Ti-rich films usually demonstrate higher leakage current owing to the low band gap of TiO2. In this work, 20-nm-thick films with Hf/Ti ratio of 46/54 demonstrates higher permittivity up to 50 with low leakage current 1.2 x 10(-8) A/cm(2) at 1 V.
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