HfO2Nano-thin Films Grown by Laser MBE for Gate Dielectric Application

Y. K. Lu,W. Zhu,Y. Zhang,H. Lu,R. Gopalkrishnan

DOI: https://doi.org/10.1109/nanoel.2006.1609728

2006-01-01

Abstract:High-k hafnium oxide thin films with equivalent of thickness (EOT) to SiO2of about 1 – 2 nm were deposited on p-type

What problem does this paper attempt to address?

Microstructure, Optical and Electrical Properties of Sputtered HfTiO High-K Gate Dielectric Thin Films

S. S. Jiang,G. He,J. Gao,D. Q. Xiao,P. Jin,W. D. Li,J. G. Lv,M. Liu,Y. M. Liu,Z. Q. Sun

DOI: https://doi.org/10.1016/j.ceramint.2016.04.067

IF: 5.532

2016-01-01

Ceramics International

Abstract:The microstructure, optical and electrical properties of HfTiO high-k gate dielectric thin films deposited on Si substrate and quartz substrate by RF magnetron sputtering have been investigated. Based on analysis from x-ray diffraction (XRD) measurements, it has been found that the as-deposited HfTiO films remain amorphous regardless of the working gas pressure. Meanwhile, combined with characterization of ultraviolet-visible spectroscopy (UV–vis) and spectroscopy ellipsometry (SE), the deposition rate, band gap and optical properties of sputtered HfTiO gate dielectrics were determined. Besides, by means of the characteristic curves of high frequency capacitance–voltage (C–V) and leakage current density–voltage (J–V), the electrical parameters, such as permittivity, total positive charge density, border trap charge density, and leakage current density, have been obtained. The leakage current mechanisms are also discussed. The energy band gap of 3.70eV, leakage current density of 1.39×10−5A/cm2 at bias voltage of 2V, and total positive charge density and border trap charge density of 9.16×1011cm−2 and 1.3×1011cm−2, respectively render HfTiO thin films deposited at 0.6Pa, potential high-k gate dielectrics in future CMOS devices.
Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

Peng Jin,Gang He,Dongqi Xiao,Juan Gao,Mao Liu,Jianguo Lv,Yanmei Liu,Miao Zhang,Peihong Wang,Zhaoqi Sun

DOI: https://doi.org/10.1016/j.ceramint.2016.01.050

IF: 5.532

2016-01-01

Ceramics International

Abstract:Deposition of high-k HfO2 gate dielectric films on n-type Si and quartz substrates by sol–gel spin-on coating technique has been performed and the structural, optical and electrical characteristics as a function of annealing temperature have been investigated. The structural and optical properties of HfO2 thin films related to annealing temperature are investigated by X-ray diffraction (XRD), ultraviolet–visible spectroscopy (UV–vis), and spectroscopic ellipsometry (SE). Results indicate that the monoclinic form of HfO2 appears when temperature rises through and above 500°C. The reduction in band gap is observed with the increase of annealing temperature. Moreover, the increase of refractive index (n) and density and the decrease of the extinction coefficient with the increase of annealing temperature are obtained by SE measurements. Additionally, the electrical properties based on Al/Si/HfO2/Al capacitor are analyzed by means of the high frequency capacitance–voltage (C–V) and the leakage current density–voltage (J–V) characteristics. And the leakage current conduction mechanisms as functions of annealing temperatures are also discussed.
Thin Hfo2 Films Grown on Si(100) by Atomic Oxygen Assisted Molecular Beam Epitaxy

ZJ Yan,R Xu,YY Wang,S Chen,YL Fan,ZM Jiang

DOI: https://doi.org/10.1063/1.1767604

IF: 4

2004-01-01

Applied Physics Letters

Abstract:Thin high-k dielectric HfO2 films are deposited on Si(100) substrate by molecular beam epitaxy using Hf and atomic oxygen source. The composition of the film is determined to be stoichiometric HfO2. The very flat surface of the deposited film with a root mean square roughness less than 0.16nm without any visible pin holes down to the nanometer size can be reached. The film maintains good thermal stability after annealing at 900°C for 15min in N2 ambient. The refractive index of the film is 1.89 with a negligible extinction coefficient in the visible wavelength region and the dielectric constant is around 19. A low leakage current of 1.61×10−3A∕cm2 at −2V bias is achieved for a film with the equivalent oxide thickness of 2.4nm after annealing.
Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

B. Deng,G. He,X. S. Chen,X. F. Chen,J. W. Zhang,M. Liu,J. G. Lv,Z. Q. Sun

DOI: https://doi.org/10.1007/s10854-014-2144-3

2014-01-01

Journal of Materials Science Materials in Electronics

Abstract:High-k gate dielectric HfO2 thin films have been deposited on Si and quartz substrates by radio frequency magnetron sputtering. The structural characteristics, surface morphology, and optical properties of the HfO2/Si gate stacks at various post-annealing temperatures were examined by X-ray diffraction (XRD), atomic force microscopy (AFM), fourier transform infrared spectroscopy (FTIR), ultraviolet–visible spectroscopy (UV–Vis spectroscopy), and spectroscopic ellipsometry (SE). XRD measurement indicates that the 80 W-deposited HfO2 films demonstrate a polycrystalline structure. AFM measurements illustrate that the root mean square of the HfO2 thin films demonstrates an apparent increase with increasing the annealing temperature. Analysis from FTIR indicates that the Si–O–Si bonds vibration peak position shift toward lower wave numbers with increasing the annealing temperature. Combined with UV–Vis spectroscopy and SE measurements, it can be noted reduction in band gap with an increase in annealing temperature has been confirmed. Additionally, increase in refractive index (n) has been confirmed by SE.
Structure and Electrical Properties of HfO 2 High- K Films Prepared by Pulsed Laser Deposition on Si (100)

Hao Wang,Y. Wang,J. Feng,C. Ye,B. Y. Wang,H. B. Wang,Q. Li,Y. Jiang,A. P. Huang,Z. S. Xiao

DOI: https://doi.org/10.1007/s00339-008-4695-8

2008-01-01

Abstract:High-k gate dielectric hafnium dioxide films were grown on Si (100) substrate by pulsed laser deposition at room temperature. The as-deposited films were amorphous and that were monoclinic and orthorhombic after annealed at 500°C in air and N2 atmosphere, respectively. After annealed, the accumulation capacitance values increase rapidly and the flat-band voltage shifts from −1.34 V to 0.449 V due to the generation of negative charges via post-annealing. The dielectric constant is in the range of 8–40 depending on the microstructure. The I–V curve indicates that the films possess of a promising low leakage current density of 4.2×10−8 A/cm2 at the applied voltage of −1.5 V.
Fabrication and Characterization of Pulsed Laser Deposited Hfo2 Films for High-K Gate Dielectric Applications

J Zhu,YR Li,ZG Liu

DOI: https://doi.org/10.1088/0022-3727/37/20/017

2004-01-01

Abstract:We investigated the structural and electrical properties of HfO2 films fabricated by the pulsed laser deposition technique. HfO2 films were deposited directly on n-Si (100) substrates and Pt coated silicon substrates, respectively, at 300 degreesC in a 20 Pa N-2 ambient, and in situ post-annealed in a 20 Pa N-2 ambient. X-ray diffraction indicates that films post-annealed at temperatures more than 500 degreesC exhibit a polycrystalline monoclinic structure. High-resolution transmission electron microscopy images clearly show that an interfacial layer (IL) between an amorphous HfO2 layer and the Si substrate exists. An x-ray photoelectron spectroscopy measurement was performed to identify this IL as nonstoichiometric Hf-silicate. The dielectric constant of amorphous HfO2 was determined to be about 26 by measuring the Pt/HfO2/Pt capacitor structures. Capacitance-voltage measurements show that a small equivalent oxide thickness of 1.26 nm for the 5 nm HfO2 film on the n-Si substrate, with a leakage current of 2.2 mA cm(-2) at 1 V gate voltage was obtained.
Hfo2-Tio2 Ultra-Thin Gate Dielectric by Rf Sputtering

G. X. Li,X. F. Chen,W. Ren,P. Shi,X. Q. Wu,O. K. Tan,W. G. Zhu,X. Yao

DOI: https://doi.org/10.1080/00150193.2010.492737

2011-01-01

Ferroelectrics

Abstract:High-K HfO2-TiO2 ultra-thin films with sub-nanometer laminate HfO2/TiO2 stacks were deposited on p-type (100) silicon wafer using magnetron sputtering at 300 degrees C. The as-deposited films are amorphous which could be sustained up to 900 degrees C in air. The off-stoichiometric films show further improved thermal stability due to obstacled crystallization process. It is revealed that Hf-rich films trends to form thicker interfacial layer due to the stability of HfO2, whereas Ti-rich films usually demonstrate higher leakage current owing to the low band gap of TiO2. In this work, 20-nm-thick films with Hf/Ti ratio of 46/54 demonstrates higher permittivity up to 50 with low leakage current 1.2 x 10(-8) A/cm(2) at 1 V.
Thermal Stability and Electrical Properties of Pulsed Laser Deposited Hf–aluminate Thin Films for High-K Gate Dielectric Applications

J Zhu,ZG Liu,YR Li

DOI: https://doi.org/10.1088/0022-3727/38/3/014

2003-01-01

Abstract:Hf-aluminate (Hf-Al-O) films have been deposited directly oil n-type Si (100) substrates and Pt-coated Si substrates using the pulsed laser deposition technique with a ceramic Hf-Al-O target, respectively. The structure and electrical properties of Hf-Al-O films have been investigated by x-ray diffraction, differential thermal analysis, x-ray photoelectron spectroscopy (XPS) and capacitance-voltage (C-V) and leakage current-voltage (J-V) measurements. The composition of films was determined as Hf1.00Al2.01O4.92, which is nearly the same as the HfO2 : Al2O3 composition from XPS detection. The amorphous structure of Hf-Al-O films remains stable up to 900 degreesC. A crystallization transformation from an amorphous phase to a polycrystalline tetragonal structure occurs with rapid thermal annealing for 3 min at 1000 degreesC. A thin interfacial layer in Hf-Al-O/n-Si was identified as a mixed compound of Hf-Al-Si-O. The amorphous Hf-Al-O film exhibits a high dielectric constant of about 16.6, determined by measuring a Pt/Hf-Al-O/Pt capacitor structure. A very small equivalent oxide thickness of 0.74 nm for a 3 min Hf-Al-O film on an n-Si substrate and a leakage current of 0.17 A cm(-2) at a 1 V gate voltage were obtained. Hf-aluminate films with high thermal stability and good electrical properties can be one of the most promising candidates for high-k gate dielectric applications.
Comparative Study of Pulsed Laser Deposited HfO 2 and Hf–aluminate Films for High- K Gate Dielectric Applications

J. Zhu,Z.G. Liu

DOI: https://doi.org/10.1007/s00339-003-2479-8

2004-01-01

Abstract:The thermal stability and the electrical properties of HfO2 and Hf–aluminate films prepared by the pulsed laser deposition technique have been investigated by X-ray diffraction, differential thermal analysis, capacitance–voltage correlation, leakage-current measurements and high-resolution transmission electron microscopy observation, respectively. A crystallization transformation from HfO2 amorphous phase to polycrystalline monoclinic structure occurs at about 500 °C. In contrast, the amorphous structure of Hf–aluminate films remains stable at higher temperatures up to 900 °C. Rapid thermal annealing at 1000 °C for 3 min leads to a phase separation in Hf–aluminate films. Tetragonal HfO2(111) is predominant, and Al2O3 separates from Hf–aluminate and is still in the amorphous state. The dielectric constant of amorphous HfO2 and Hf–aluminate films was determined to be about 26 and 16.6, respectively, by measuring a Pt/dielectric film/Pt capacitor structure. A very small equivalent oxide thickness (EOT) value of 0.74 nm for a 3-nm physical thickness Hf–aluminate film on a n-Si substrate with a leakage current of 0.17 A/cm2 at 1-V gate voltage was obtained. The interface at Hf–aluminate/Si is atomically sharp, while a thick interface layer exists between the HfO2 film and the Si substrate, which makes it difficult to obtain an EOT of less than 1 nm.
Ultrathin Hfo2(Eot < 0.75nm) Gate Stack With Tan/Hfn Electrodes Fabricated Using A High-Temperature Process

Jf Kang,Hy Yu,C Ren,Mf Li,Dsh Chan,Xy Liu,Dl Kwong

DOI: https://doi.org/10.1149/1.2052051

2005-01-01

Abstract:High quality TaN/HfN/HfO2 gate stacks with 0.65 nm of the equivalent oxide thickness and 0.3 A/cm(2) at (-1V + V-FB) of the gate leakage have been demonstrated. An NH3-based Si-surface nitridation process was performed prior to HfO2 deposition. The HfO2 films were deposited in a metallorganic chemical vapor deposition cluster tool. The TaN/HfN metal stacked layers were deposited on HfO2 by reactive sputtering. The gate stack shows excellent thermal stability, in equivalent oxide thickness (EOT) and leakage after 1000 degrees C annealing. A 10-year time dependent dielectric breakdown lifetime of 1000 degrees C rapid thermal anneal annealed HfN/HfO2 stack is projected at V-g = -3 V with an EOT = 0.75 nm. (c) 2005 The Electrochemical Society.
Preparation of High-Quality Hf-Aluminate Films by Eb-Pvd

Cheng Xinhong,Song Zhaorui,Yu Yuehui

DOI: https://doi.org/10.3321/j.issn:1002-185x.2006.08.004

2006-01-01

Rare Metal Materials and Engineering

Abstract:Hf-aluminate films, a potential replacement for SiO2 as gate dielectrics, were deposited on Si substrate by ultra-vacuum electron beam evaporation (EB-PVD) method. The film with a chemical composition of (HfO2)(Al2O3)(2), remained amorphous even after post annealing treatment at 900 degrees C, presenting good electrical performances including a dielectric constant of 12.7, an equivalent oxide thickness of 2 nm, a fixed charge density of 4x10(12) cm(-2), and a leakage current density of 0.04 mA/cm(2) at the gate bias of 2V. Post annealing treatment could reduce the leakage current and the fixed charge density effectively, but made the film surface rough and increased equivalent oxide thickness.
The interfaces of lanthanum oxide-based subnanometer EOT gate dielectrics.

Hei Wong,Jian Zhou,Jieqiong Zhang,Hao Jin,Kuniyuki Kakushima,Hiroshi Iwai

DOI: https://doi.org/10.1186/1556-276X-9-472

2014-01-01

Nanoscale Research Letters

Abstract:When pushing the gate dielectric thickness of metal-oxide-semiconductor (MOS) devices down to the subnanometer scale, the most challenging issue is the interface. The interfacial transition layers between the high-k dielectric/Si and between the high-k dielectric/gate metal become the critical constraints for the smallest achievable film thickness. This work presents a detailed study on the interface bonding structures of the tungsten/lanthanum oxide/silicon (W/La2O3/Si) MOS structure. We found that both W/La2O3 and La2O3/Si are thermally unstable. Thermal annealing can lead to W oxidation and the forming of a complex oxide layer at the W/La2O3 interface. For the La2O3/Si interface, thermal annealing leads to a thick low-k silicate layer. These interface layers do not only cause significant device performance degradation, but also impose a limit on the thinnest equivalent oxide thickness (EOT) to be achievable which may be well above the requirements of our future technology nodes.
Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers

M. L. Green,M.-Y. Ho,B. Busch,G. D. Wilk,T. Sorsch,T. Conard,B. Brijs,W. Vandervorst,P. I. Räisänen,D. Muller,M. Bude,J. Grazul

DOI: https://doi.org/10.1063/1.1522811

IF: 2.877

2002-12-15

Journal of Applied Physics

Abstract:A study was undertaken to determine the efficacy of various underlayers for the nucleation and growth of atomic layer deposited HfO2 films. These were compared to films grown on hydrogen terminated Si. The use of a chemical oxide underlayer results in almost no barrier to film nucleation, enables linear and predictable growth at constant film density, and the most two-dimensionally continuous HfO2 films. The ease of nucleation is due to the large concentration of OH groups in the hydrous, chemical oxide. HfO2 grows on chemical oxide at a coverage rate of about 14% of a monolayer per cycle, and films are about 90% of the theoretical density of crystalline HfO2. Growth on hydrogen terminated Si is characterized by a large barrier to nucleation and growth, resulting in three-dimensional, rough, and nonlinear growth. Thermal oxide/oxynitride underlayers result in a small nucleation barrier, and nonlinear growth at low HfO2 coverages. The use of chemical oxide underlayers clearly results in the best HfO2 layers. Further, the potential to minimize the chemical oxide thickness provides an important research opportunity for high-κ gate dielectric scaling below 1.0 nm effective oxide thickness.

physics, applied
Comparison of Hfalo, Hfo2/Al2o3, and Hfo2 on N-Type Gaas Using Atomic Layer Deposition

Bin Lu,Hongliang Lv,Yuming Zhang,Yimen Zhang,Chen Liu

DOI: https://doi.org/10.1016/j.spmi.2016.07.032

IF: 3.22

2016-01-01

Superlattices and Microstructures

Abstract:Different high-permittivity (high-k) gate dielectric structures of HfO2, HfAlO, and HfO2/Al2O3 deposited on HF-etched n-GaAs using ALD have been investigated. It has been demonstrated that the stacked structure of HfO2/Al2O3 has the lowest interface state density of 8.12 x 10(12)eV(-1) cm(-2) due to the "self-cleaning" reaction process, but the sample of HfAlO shows much better frequency dispersion and much higher dielectric permittivity extracted from the C-V curves. The investigation reveals that the electrical properties of gate dielectrics are improved by introducing alumina into HfO2. (C) 2016 Elsevier Ltd. All rights reserved.
Thermal annealing, interface reaction, and lanthanum-based sub-nanometer EOT gate dielectrics

hei wong,jieqiong zhang,shurong dong,kuniyuki kakushima,hiroshi iwai

DOI: https://doi.org/10.1016/j.vacuum.2015.01.028

IF: 4

2015-01-01

Vacuum

Abstract:In future nanoscale complementary metal-oxide-semiconductor (CMOS) devices, the high dielectric constant (high-k) gate dielectric film will be shrunk down to a couple of nanometers or down to the sub-nanometer range in the sense of oxide equivalent thickness (EOT). However, as high-k materials, including La2O3 which has been considered to be one of the promising next generation gate dielectric materials, are only marginally stable on the silicon substrate, some nominal temperature processes used for the device fabrication may still give rise to interface reactions and result in a low-k interface layer which will be a critical constraint for achieving the ultrathin EOT gate dielectric film. In this work, some issues related to the material interaction at the lanthanum oxide/Si and lanthanum oxide/metal interfaces will be discussed with the supports of interface bonding structures as revealed by using angle-resolved x-ray photoelectron spectroscopy (ARXPS) measurements. We show that thermal annealing at temperature above 500 °C would result in the migration of Si atoms deep into the bulk of the La2O3 film and formation of silicate phases both at the interface and in the bulk. These effects would significantly lower the dielectric constant and thus increases the effective thickness of the dielectric film from the equivalent silicon oxide thickness (EOT) point of view.
Electrical and Reliability Characteristics of High-Κ HfO 2 Gate Dielectrics

Dedong Han

2002-01-01

Abstract:As MOSFET devices are scaled down to below 100nm, the gate oxide thickness is required below 2nm. Conventional SiO2 gate dielectric will be replaced due to excessive leakage and poor reliabilit y. Thus, high dielectrics constant (K) gate dielectrics are being studied as an alternative. High-K dielectrics materials such as CeO2, Y2O3, Ta2O5, HfO2, ZrO2, TiO2, Al2O3, SrTiO3(STO), and BaSrTiO3(BST) have are studied . Among them, HfO2 is a promising candidate due to its thermodynamic stabil ity on Si, high dielectric constant ( 25), and relatively large band gap (5.68eV). In the paper, ultra-thin HfO2 gate dielectrics films were fabricated, electrical and reliabili ty properties such as capacitance-voltage (C-V), current-voltage (I-V), stress induce leakage current (SILC) effects and breakdown characteristics were studied. In the experiment, HfO2 capacitor samples have been fabricated using the following process. P-type (100) sili con substrates with 5-8 cm resistivity were cleaned using H2SO4:H2O2 (2:1) solution and HF dip. Thin HfO2 layers were following deposited at room temperature by ion beam sputtering a sintered HfO2 target. Then they were annealed under various temperatures and ambient. After annealing, Pt top electrodes were deposited by sputtering. The area of the capacitors was 5 10cm. The C-V and I-V curves were measured using HP4156B semiconductor parameter analyzer and Keithley590 C-V analyzer. Figure 1 shows the capacitance-voltage (C-V) curves of HfO2 gate dielectrics. The largest value of measured capacitance density in accumulation is Cmax/A=11.6fF/ m. The equivalent oxide thickness (EOT) is about 2.9nm. Comparing capacitances of various annealing temperatures, the capacitance of the sample annealed at 400 is highest. With increase annealed temperatures, EOT increased. Figure 2 shows the current-voltage (I-V) characteristics of HfO2 gate dielectrics. The leakage current of the sample annealed at 800 is lowest, which is about 3.09 10A/cm at –1.5V gate voltage. No distinct SILC effect is obtained. The leakage current of the sample annealed at 400 after 1×10C/cm stress has a very lit tle diversification. With increase annealed temperatures, the leakage current and SILC effect reduced. Figure 3 shows breakdown characteristics of HfO2 dielectrics. The breakdown electric field of HfO2 dielectrics is more than 2×10MV/cm. With increase annealing temperatures, the breakdown voltages decreased. Consequently, ultra-thin HfO2 gate dielectrics (EOT<3nm) were fabricated. All samples annealed under various temperatures and N2 ambient have good electrical characteristic and reliabili ty. With increase annealing temperatures, EOT of increased, the leakage current and SILC effect reduced, the breakdown voltages decreased. References: [1] E.P. Gusev, E. Carier, D.A. Buchanan, M. Gribelyuk, M. Copel, H. Okorn-Schmidt, and C.D. Emic, Microelectronic Engineering 59(2001) 341-349 [2] Wen-jie Qi, Renee Nieh, Byoung Hun Lee, Laegu Kang, Yongjoo Jeon, and Jack C. Lee, Applied Physics Letters, 2000, 77(20): 3269-3271 [3] G.D. Wilk, and R.M. Wallace, Applied Physics Letters, 1999, 74(19): 2854-2856 [4] Kevin X. Zhang, Carlton M. Osbun, IEEE Trans. Electron Devices, 42(12), 1995, 2181-2188 [5] G.D. Wilk, R.M. Wallace, J.M. Anthony, Applied Physics Review, 2001, 89(10): 5243-5275
Study of Hfsio Film Prepared by Electron Beam Evaporation for High-K Gate Dielectric Applications

Xinhong Cheng,Zhaorui Song,Jun Jiang,Yuehui Yu,Wenwei Yang,Dashen Shen

DOI: https://doi.org/10.1016/j.apsusc.2005.10.024

IF: 6.7

2006-01-01

Applied Surface Science

Abstract:The purpose of this paper is to report some experimental results with HfSiO films formed on silicon substrates by electron beam evaporation (EB-PVD) and annealed at different temperatures. The images of atomic force microscope (AFM) indicated that HfSiO film annealed at 900°C was still amorphous, with a surface roughness of 0.173nm. X-ray photoelectron spectroscopy (XPS) analysis revealed that the chemical composition of the film was (HfO2)3(SiO2) and Hf–Si–O bonds existed in the annealed film. Electrical measurements showed that the equivalent oxide thickness (EOT) was 4nm, the dielectric constant was around 6, the breakdown voltage was 10MV/cm, the fixed charge density was −1.2×1012cm−2, and the leakage current was 0.4μA/cm2 at the gate bias of 2V for 6nm HfSiO film. The annealing after deposition effectively reduced trapping density and the leakage current, and eliminated hysteresis in the C–V curves. Annealing also induced SiO2 growth at the interface.
Fabrication and characterization of La-doped HfO2 gate dielectrics by metal-organic chemical vapor deposition

Liu-Ying Huang,Ai-Dong Li,Wen-Qi Zhang,Hui Li,Yi-Dong Xia,Di Wu

DOI: https://doi.org/10.1016/j.apsusc.2009.10.094

IF: 6.7

2010-01-01

Applied Surface Science

Abstract:La-doped HfO2 gate dielectric thin films have been deposited on Si substrates using La(acac)3 and Hf(acac)4 (acac=2,4-pentanedionate) mixing sources by low-pressure metal-organic chemical vapor deposition (MOCVD). The structure, thermal stability, and electrical properties of La-doped HfO2 films have been investigated. Inductive coupled plasma analyses confirm that the La content ranging from 1 to 5mol% is involved in the films. The films show smaller roughness of ∼0.5nm and improved thermal stability up to 750°C. The La-doped HfO2 films on Pt-coated Si and fused quartz substrates have an intrinsic dielectric constant of ∼28 at 1MHz and a band gap of 5.6eV, respectively. X-ray photoelectron spectroscopy analyses reveal that the interfacial layer is Hf-based silicate. The reliable value of equivalent oxide thickness (EOT) around 1.2nm has been obtained, but with a large leakage current density of 3A/cm2 at Vg=1V+Vfb. MOCVD-derived La-doped HfO2 is demonstrated to be a potential high-k gate dielectric film for next generation metal oxide semiconductor field effect transistor applications.
Structural Characteristics of HfSiON High-k Dielectrics Films Grown by Radio Frequency Magnetron Sputtering

FENG Li-ping,LIU Zheng-tang

DOI: https://doi.org/10.3969/j.issn.1003-1545.2008.02.002

2008-01-01

Abstract:Novel HfSiON thin films were prepared on p-type Si substrates by using radio-frequency magnetron sputtering deposition.Composition and structure of the films is determined by means of XPS and XRD respectively.High resolution scanning electron microscope(HRSEM)and atomic force microscope(AFM)have been empoled to observe the cross-section and the surface morphology of the thin films.XRD analyses show that the films are amorphous even after annealed at 900℃.The results of HRSEM and AFM present that the films have very flat surface,indicating a good thermal stability.HfSiON films have excellent dielectric properties with high dielectric constant k of about 18.9 and low leakage current of 2.5×10-7 A/cm2 at Vg of +1.5V.All the characteristics show that HfSiON films will be a promising candidate for SiO2 gate dielectric and it also indicates that radio frequency magnetron sputtering is a good way to deposit HfSiON high-k thin films as dielectric.
Amazing Diffusion Depth of Ultra-Thin Hafnium Oxide Film Grown on N-Type Silicon by Lower Temperature Atomic Layer Deposition

Qihai Lu,Rong Huang,Xiaoling Lan,Xiaowei Chi,Chao Lu,Cheng Li,Zhiguo Wu,Jun Li,Genliang Han,Pengxun Yan

DOI: https://doi.org/10.1016/j.matlet.2016.01.087

IF: 3

2016-01-01

Materials Letters

Abstract:Hafnium diffusion from ultra-thin high-k gate dielectric HfO2 deposited on n+-Si substrate by atomic layer deposition at lower temperature of 150°C was investigated by using x-ray photoelectron energy spectra (XPS) analysis. The surface is the complete oxidation of HfO2, and Hf and O diffusion into Si substrate with different depths during atomic layer deposition process. Hf and O incorporation into silicon forms silicates accompany with silicides and further silicides only, respectively. An empirical formula was deduced to calculate the diffusion depth of the Hf element to 33nm. The Ni80Fe20/HfO2/Si contact resistance was dominated by tunneling current for the thicker HfO2 but limited by Schottky barrier height for the thinner HfO2 by setting 1.5nm as a watershed.

HfO2Nano-thin Films Grown by Laser MBE for Gate Dielectric Application

Microstructure, Optical and Electrical Properties of Sputtered HfTiO High-K Gate Dielectric Thin Films

Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

Thin Hfo2 Films Grown on Si(100) by Atomic Oxygen Assisted Molecular Beam Epitaxy

Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

Structure and Electrical Properties of HfO 2 High- K Films Prepared by Pulsed Laser Deposition on Si (100)

Fabrication and Characterization of Pulsed Laser Deposited Hfo2 Films for High-K Gate Dielectric Applications

Hfo2-Tio2 Ultra-Thin Gate Dielectric by Rf Sputtering

Thermal Stability and Electrical Properties of Pulsed Laser Deposited Hf–aluminate Thin Films for High-K Gate Dielectric Applications

Comparative Study of Pulsed Laser Deposited HfO 2 and Hf–aluminate Films for High- K Gate Dielectric Applications

Ultrathin Hfo2(Eot < 0.75nm) Gate Stack With Tan/Hfn Electrodes Fabricated Using A High-Temperature Process

Preparation of High-Quality Hf-Aluminate Films by Eb-Pvd

The interfaces of lanthanum oxide-based subnanometer EOT gate dielectrics.

Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers

Comparison of Hfalo, Hfo2/Al2o3, and Hfo2 on N-Type Gaas Using Atomic Layer Deposition

Thermal annealing, interface reaction, and lanthanum-based sub-nanometer EOT gate dielectrics

Electrical and Reliability Characteristics of High-Κ HfO 2 Gate Dielectrics

Study of Hfsio Film Prepared by Electron Beam Evaporation for High-K Gate Dielectric Applications

Fabrication and characterization of La-doped HfO2 gate dielectrics by metal-organic chemical vapor deposition

Structural Characteristics of HfSiON High-k Dielectrics Films Grown by Radio Frequency Magnetron Sputtering

Amazing Diffusion Depth of Ultra-Thin Hafnium Oxide Film Grown on N-Type Silicon by Lower Temperature Atomic Layer Deposition