Structure and Electrical Properties of HfO 2 High- K Films Prepared by Pulsed Laser Deposition on Si (100)

Hao Wang,Y. Wang,J. Feng,C. Ye,B. Y. Wang,H. B. Wang,Q. Li,Y. Jiang,A. P. Huang,Z. S. Xiao
DOI: https://doi.org/10.1007/s00339-008-4695-8
2008-01-01
Abstract:High-k gate dielectric hafnium dioxide films were grown on Si (100) substrate by pulsed laser deposition at room temperature. The as-deposited films were amorphous and that were monoclinic and orthorhombic after annealed at 500°C in air and N2 atmosphere, respectively. After annealed, the accumulation capacitance values increase rapidly and the flat-band voltage shifts from −1.34 V to 0.449 V due to the generation of negative charges via post-annealing. The dielectric constant is in the range of 8–40 depending on the microstructure. The I–V curve indicates that the films possess of a promising low leakage current density of 4.2×10−8 A/cm2 at the applied voltage of −1.5 V.
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