Abstract:Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are more sensitive to defects than traditional bulk materials. The technological adoption of TMDs is dependent on the mitigation of deleterious defects and guided incorporation of functional foreign atoms. The first step toward impurity control is the identification of defects and assessment of their electronic properties. Here, we present a comprehensive study of point defects in monolayer tungsten disulfide (WS2) grown by chemical vapor deposition using scanning tunneling microscopy/spectroscopy, CO-tip noncontact atomic force microscopy, Kelvin probe force spectroscopy, density functional theory, and tight-binding calculations. We observe four different substitutional defects: chromium (CrW) and molybdenum (MoW) at a tungsten site, oxygen at sulfur sites in both top and bottom layers (OS top/bottom), and two negatively charged defects (CD type I and CD type II). Their electronic fingerprints unambiguously corroborate the defect assignment and reveal the presence or absence of in-gap defect states. CrW forms three deep unoccupied defect states, two of which arise from spin-orbit splitting. The formation of such localized trap states for CrW differs from the MoW case and can be explained by their different d shell energetics and local strain, which we directly measured. Utilizing a tight-binding model the electronic spectra of the isolectronic substitutions OS and CrW are mimicked in the limit of a zero hopping term and infinite on-site energy at a S and W site, respectively. The abundant CDs are negatively charged, which leads to a significant band bending around the defect and a local increase of the contact potential difference. In addition, CD-rich domains larger than 100 nm are observed, causing a work function increase of 1.1 V. While most defects are electronically isolated, we also observed hybrid states formed between CrW dimers. The important role of charge localization, spin-orbit coupling, and strain for the formation of deep defect states observed at substitutional defects in WS2 as reported here will guide future efforts of targeted defect engineering and doping of TMDs.

Monovacancy and Substitutional Defects in Hexagonal Silicon Nanotubes

Atomistic Exploration of Deformation Properties of Copper Nanowires with Pre-Existing Defects

Vacancy migrations in carbon nanotubes.

How Substitutional Point Defects in Two-Dimensional WS2 Induce Charge Localization, Spin-Orbit Splitting, and Strain.

Chemically active substitutional nitrogen impurity in carbon nanotubes

Influence of Stone-Wales defects on the structural and electronic properties of single-walled silicon nanotubes by SCC-DFTB calculations

Formation, morphology, and effect of complex defects in boron nitride nanotubes: An ab initio calculation

Confined Electron and Hole States in Semiconducting Carbon Nanotube sub-10 nm Artificial Quantum Dots

Characterization of Single-Walled Carbon Nanotubes with Nodal Structural Defects

Effect of substitutional and vacancy defects on the electrical and mechanical properties of 2D-hexagonal boron nitride

Investigation on Influence of Antisite Defects on Electronic Structure and Optical Properties of Silicon Carbide Nanotube

Atomic-vacancy effects on field electron emission of carbon nanotubes: A first-principles study

Carbon and vacancy centers in hexagonal boron nitride

First-principles Study for Transport Properties of Armchair Carbon Nanotubes with a Double Vacancy under Strain

Introducing novel electronic and magnetic properties in C3N nanosheets by defect engineering and atom substitution

How Substitutional Point Defects in Two-Dimensional WS$_2$ Induce Charge Localization, Spin-Orbit Splitting, and Strain

Vacancy-related color centers in twodimensional silicon carbide monolayers

Site-dependent properties of quantum emitters in nanostructured silicon carbide

Thermal Stability of Single Walled SiGe Nanotube with Vacancy Defects: a Molecular Dynamics Simulation Study

Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides with experiment and theory

Chain Vacancies in 2D Crystals.