Chemically active substitutional nitrogen impurity in carbon nanotubes

Andriy H. Nevidomskyy,Gábor Csányi,Michael C. Payne

DOI: https://doi.org/10.1103/PhysRevLett.91.105502

2004-12-12

Abstract:We investigate the nitrogen substitutional impurity in semiconducting zigzag and metallic armchair single-wall carbon nanotubes using ab initio density functional theory. At low concentrations (less than 1 atomic %), the defect state in a semiconducting tube becomes spatially localized and develops a flat energy level in the band gap. Such a localized state makes the impurity site chemically and electronically active. We find that if two neighboring tubes have their impurities facing one another, an intertube covalent bond forms. This finding opens an intriguing possibility for tunnel junctions, as well as the functionalization of suitably doped carbon nanotubes by selectively forming chemical bonds with ligands at the impurity site. If the intertube bond density is high enough, a highly packed bundle of interlinked single-wall nanotubes can form.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the chemical and electronic activities of nitrogen - substituted impurities in single - walled carbon nanotubes (SWNT), especially the influence on the electronic structure and chemical properties of semiconducting and metallic carbon nanotubes after nitrogen atoms substitute carbon atoms at low concentrations (less than 1 at.%). Specifically, the research focuses on the following points:

1. **Electronic states of nitrogen - substituted impurities**:
- In semiconducting zigzag carbon nanotubes, nitrogen - substituted impurities will lead to a spatially localized defect state and form a flat energy level within the band gap.
- This localized state makes the impurity sites very active chemically and electronically.

2. **Interaction between adjacent carbon nanotubes**:
- If the nitrogen impurities of two adjacent carbon nanotubes are relatively arranged, a covalent bond can be formed between them.
- This finding provides the possibility for the formation of tunnel junctions and also provides a method for functionalizing doped carbon nanotubes by selectively forming chemical bonds at impurity sites.

3. **High - density interconnected carbon nanotube bundles**:
- If the density of covalent bonds between carbon nanotubes is high enough, highly interconnected and closely packed single - walled carbon nanotube bundles can be formed, thereby significantly enhancing their mechanical properties.

4. **Possibility of chemical bonding**:
- The localized electronic state makes the nitrogen impurity sites chemically active and able to form covalent bonds with ligands or other carbon nanotubes.
- This characteristic may be of great significance in chemical sensing applications.

Through these studies, the authors aim to explore how to use nitrogen - substituted impurities to regulate the electronic and chemical properties of carbon nanotubes, and then develop new nanotechnologies and molecular electronic devices.