Abstract:By employing first-principles calculations within the framework of density functional theory, we investigated the structural, electronic, and magnetic properties of graphene and various two-dimensional carbon-nitride (2DNC) nanosheets. The different 2DCN gives rise to diverse electronic properties such as metals (<math> C 3 N 2</math>), semimetals (<math> C 4 N</math> and <math> C 9 N 4</math>), half-metals (<math> C 4 N 3</math>), ferromagnetic-metals (<math> C 9 N 7</math>), semiconductors (<math> C 2 N</math>, <math> C 3 N</math>, <math> C 3 N 4</math>, <math> C 6 N 6</math>, and <math> C 6 N 8</math>), spin-glass semiconductors (<math> C 10 N 9</math> and <math> C 14 N 12</math>), and insulators (<math> C 2 N 2</math>). Furthermore, the effects of adsorption and substitution of hydrogen atoms as well as N-vacancy defects on the electronic and magnetic properties are systematically studied. The introduction of point defects, including N vacancies, interstitial H impurity into graphene and different 2DCN crystals, results in very different band structures. Defect engineering leads to the discovery of potentially exotic properties that make 2DCN interesting for future investigations and emerging technological applications with precisely tailored properties. These properties can be useful for applications in various fields such as catalysis, energy storage, nanoelectronic devices, spintronics, optoelectronics, and nanosensors.

Introducing novel electronic and magnetic properties in C3N nanosheets by defect engineering and atom substitution

A first-principles study of the effects of atom impurities, defects, strain, electric field and layer thickness on the electronic and magnetic properties of the C2N nanosheet

C3N—A 2D Crystalline, Hole‐Free, Tunable‐Narrow‐Bandgap Semiconductor with Ferromagnetic Properties

First-Principles Study of the Electronic and Magnetic Properties of Defects in Carbon Nanostructures

2D Materials: C<sub>3</sub> N-A 2D Crystalline, Hole-Free, Tunable-Narrow-Bandgap Semiconductor with Ferromagnetic Properties (Adv. Mater. 16/2017)

First-principles Study of Two Dimensional C3N and Its Derivatives.

Two-dimensional carbon nitride (2DCN) nanosheets: Tuning of novel electronic and magnetic properties by hydrogenation, atom substitution and defect engineering

Effect of vacancy defects on anisotropic electronic transport behaviors of CoN4C2 based 2D devices: a first-principles study

First-principles study of the role of strain and hydrogenation on C3N

Structural, Electronic, and Magnetic Properties of Defects in the BC3 Sheet from First Principles

Embedding of atoms into the nanopore sites of the C6N6 and C6N8 porous carbon nitride monolayers with tunable electronic properties

Adsorption of Metallic, Metalloidic, and Nonmetallic Adatoms on Two-Dimensional C3N

Tuning the Electronic and Magnetic Properties of Porous Graphene-Like Carbon Nitride Through 3d Transition-Metal Doping

Tuning the electronic and magnetic properties of antimonene nanosheets via point defects and external fields: first-principles calculations

Electronic and magnetic properties of SnC monolayer doped with 3d transition metals: A first-principles study

Tailored Modifications of the Electronic Properties of G-C3n4/c2n-h2d Nanoribbons by First-Principles Calculations.

Structural, electronic and magnetic properties of point defects in polyaniline (C3N) and graphene monolayers: A comparative study

Modulating the electronic, magnetic and optical properties of 1T-SnSe2 monolayer by defects: An ab initio study

Effect of Mn+2 Doping and Vacancy on the Ferromagnetic Cubic 3C-SiC Structure Using First Principles Calculations

Defects-driven magnetism in bulk $α$-Li$ _{3}$N

C3N: a Two Dimensional Semiconductor Material with High Stiffness,superior Stability and Bending Poisson's Effect