Abstract:Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are more sensitive to defects than traditional bulk materials. The technological adoption of TMDs is dependent on the mitigation of deleterious defects and guided incorporation of functional foreign atoms. The first step toward impurity control is the identification of defects and assessment of their electronic properties. Here, we present a comprehensive study of point defects in monolayer tungsten disulfide (WS2) grown by chemical vapor deposition using scanning tunneling microscopy/spectroscopy, CO-tip noncontact atomic force microscopy, Kelvin probe force spectroscopy, density functional theory, and tight-binding calculations. We observe four different substitutional defects: chromium (CrW) and molybdenum (MoW) at a tungsten site, oxygen at sulfur sites in both top and bottom layers (OS top/bottom), and two negatively charged defects (CD type I and CD type II). Their electronic fingerprints unambiguously corroborate the defect assignment and reveal the presence or absence of in-gap defect states. CrW forms three deep unoccupied defect states, two of which arise from spin-orbit splitting. The formation of such localized trap states for CrW differs from the MoW case and can be explained by their different d shell energetics and local strain, which we directly measured. Utilizing a tight-binding model the electronic spectra of the isolectronic substitutions OS and CrW are mimicked in the limit of a zero hopping term and infinite on-site energy at a S and W site, respectively. The abundant CDs are negatively charged, which leads to a significant band bending around the defect and a local increase of the contact potential difference. In addition, CD-rich domains larger than 100 nm are observed, causing a work function increase of 1.1 V. While most defects are electronically isolated, we also observed hybrid states formed between CrW dimers. The important role of charge localization, spin-orbit coupling, and strain for the formation of deep defect states observed at substitutional defects in WS2 as reported here will guide future efforts of targeted defect engineering and doping of TMDs.

How Substitutional Point Defects in Two-Dimensional WS$_2$ Induce Charge Localization, Spin-Orbit Splitting, and Strain

How Substitutional Point Defects in Two-Dimensional WS2 Induce Charge Localization, Spin-Orbit Splitting, and Strain.

A substitutional quantum defect in WS$_2$ discovered by high-throughput computational screening and fabricated by site-selective STM manipulation

Large spin-orbit splitting of deep in-gap defect states of engineered sulfur vacancies in monolayer WS2

Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides with experiment and theory

Role of Defects in Tuning the Electronic Properties of Monolayer WS2 Grown by Chemical Vapor Deposition

Probing the charged defects in single-layer WS2 at atomic level

Correlatively Dependent Lattice and Electronic Structural Evolutions in Compressed Monolayer Tungsten Disulfide.

Defects-/doping-driven modulation of the electronic and magnetic properties of 2H- and Td-phase W T e 2 monolayers: A first-principle study

Charge State-Dependent Symmetry Breaking of Atomic Defects in Transition Metal Dichalcogenides

Point Defects and Localized Excitons in 2D WSe2

Defects in monolayer WS2 grown via sulfurization of WSe2

Giant spin-orbit splitting of point defect states in monolayer WS$_2$

Defect Engineering of Two-Dimensional Transition-Metal Dichalcogenides: Applications, Challenges, and Opportunities

A Hybrid-DFT Study of Intrinsic Point Defects in $MX_2$ ($M$=Mo, W; $X$=S, Se) Monolayers

Defect Tolerant Monolayer Transition Metal Dichalcogenides

Strain-driven Charge Localisation and Spin Dynamics of Paramagnetic Defects in S-deficit 2H-MoS2 Nanocrystals

Exploring atomic defects in molybdenum disulphide monolayers

Defect Engineering of Two-dimensional Molybdenum Disulfide

Approaching the Intrinsic Limit in Transition Metal Diselenides via Point Defect Control

The Defects Genome of 2D Janus Transition Metal Dichalcogenides