Abstract:Localized electronic states formed inside the band gap of a semiconductor due to crystal defects can be detrimental to the material's optoelectronic properties. Semiconductors with lower tendency to form defect induced deep gap states are termed defect tolerant. Here we provide a systematic first principles investigation of defect tolerance in 29 monolayer transition metal dichalcogenides (TMDs) of interest for nanoscale optoelectronics. We find that the TMDs based on group VI and X metals form deep gap states upon creation of a chalcogen (S, Se, Te) vacancy while the TMDs based on group IV metals form only shallow defect levels and are thus predicted to be defect tolerant. Interestingly, all the defect sensitive TMDs have valence and conduction bands with very similar orbital composition. This indicates a bonding/anti-bonding nature of the gap which in turn suggests that dangling bonds will fall inside the gap. These ideas are made quantitative by introducing a descriptor that measures the degree of similarity of the conduction and valence band manifolds. Finally, the study is generalized to non-polar nanoribbons of the TMDs where we find that only the defect sensitive materials form edge states within the band gap.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **The changes in the electronic structure and photoelectric properties of monolayer transition metal dichalcogenides (TMDs) in the presence of chalcogen - element vacancy defects and their causes**. Specifically, the author hopes to study the tolerance of 29 different TMDs monolayer materials to chalcogen - element (S, Se, Te) vacancies through systematic first - principles calculations, and find out which materials can tolerate these defects without introducing deep - level states, thereby maintaining good photoelectric properties. ### Research Background and Problem Description 1. **Influence of Crystal Defects**: Crystal defects (such as chalcogen - element vacancies) will form localized electronic states in the semiconductor band gap, and these localized states may seriously affect the photoelectric properties of the material. For example, they can act as scattering centers to reduce carrier mobility or enhance non - radiative recombination, thereby reducing the quantum efficiency of photoelectric devices. 2. **Importance of Defect - Tolerant Materials**: Defect - tolerant materials refer to those materials that will not introduce deep - level states in the band gap even in the presence of defects. Such materials are more stable and reliable in practical applications because they will not significantly reduce performance due to defects. 3. **Research Objectives**: Through systematic research, find out which TMDs materials have a high tolerance to chalcogen - element vacancies and explore the underlying physical mechanisms. This will help guide experimental synthesis and device design and select materials more suitable for practical applications. ### Main Research Contents - **Material Selection**: The author selected 29 different TMDs monolayer materials for research, and these materials include compounds based on different group metals (Group IV, Group VI, Group X). - **Calculation Method**: The first - principles calculation method (such as DFT) was used to calculate the band structure and density of states of these materials with and without chalcogen - element vacancies. - **Key Findings**: - TMDs based on Group VI and Group X metals will introduce deep - level states after the formation of chalcogen - element vacancies. - TMDs based on Group IV metals only introduce shallow - level states or no level states at all, so they are considered to be defect - tolerant. - This difference is closely related to the orbital characteristics of the valence band and the conduction band: the valence band and the conduction band of defect - sensitive materials have similar orbital compositions, while defect - tolerant materials have significantly different orbital compositions. ### Quantitative Descriptor In order to quantify this difference, the author introduced a descriptor called "Normalized Orbital Overlap (NOO)", which is defined as: \[ D=\langle\alpha|\beta\rangle \] where \(\alpha\) and \(\beta\) represent the orbital fingerprint vectors of the valence band and the conduction band respectively, and the calculation formula is as follows: \[ |\alpha\rangle = \frac{1}{\sqrt{c}}\begin{bmatrix}\rho_{\nu_1}\\\rho_{\nu_2}\\\vdots\\\rho_{\nu_N}\end{bmatrix} \] \[ \rho_{\nu_i}=\sum_n\int_{E_1}^{E_2}|\langle\psi_n|\phi_{\nu_i}\rangle|^2\delta(E - E_n)dE \] By calculating the NOO value, the author found that materials with an NOO close to 1 tend to introduce deep - level states, while materials with an NOO significantly less than 1 show defect - tolerance. ### Conclusion This study reveals the relationship between the tolerance of TMDs monolayer materials to chalcogen - element vacancies and the orbital characteristics of their valence band and conduction band, and proposes a quantitative descriptor to predict the defect - tolerance of materials. This finding is of great significance for guiding the design and application of new two - dimensional materials.

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