Abstract:A comprehensive variation extraction flow is proposed to separate different random variation sources in FinFET technology. Based on the understanding of the impacts of random dopant fluctuation (RDF), metal gate granularity (MGG), and line edge roughness (LER) on device figures of merit: threshold voltage (V th ) and subthreshold swing (SS), the LER component induced V th variation can be extracted using covariance matrix of SS and V th . The RDF and MGG can be separated from IV curves of FinFETs with different doping concentration. Results decomposed from the overall flow show great agreement with TCAD simulations. The proposed flow can achieve the accurate extraction of the three major variation sources in FinFET technology. Furthermore, the extendibility of the proposed method to understand the physical mechanisms of random variations is exhibited.

Statistical device simulation of intrinsic parameter fluctuation in 16-nm-gate n- and p-type Bulk FinFETs

Correlation of I<inf>d</inf>- and I<inf>g</inf>-random Telegraph Noise to Positive Bias Temperature Instability in Scaled High-&Amp;#x03ba;/metal Gate N-Type MOSFETs

Electrical characteristic fluctuation of 16-nm-gate trapezoidal bulk FinFET devices with fixed top-fin width induced by random discrete dopants

Physical Study of Low-frequency TDDB Lifetime Deterioration in Advanced FinFETs

Numerical Study on Effects of Random Dopant Fluctuation in Double Gate Tunneling FET

Impact of random discrete dopant in extension induced fluctuation in gate–source/drain underlap FinFET

Impact of Random Interface Traps and Random Dopants in High- /Metal Gate Junctionless FETs

A Device-Level Characterization Approach to Quantify the Impacts of Different Random Variation Sources in FinFET Technology

Impact of Random Dopant Fluctuation Effect on Surrounding Gate MOSFETs: from Atomic Level Simulation to Circuit Performance Evaluation.

Drain bias effects on statistical variability and reliability and related subthreshold variability in 20-nm bulk planar MOSFETs

Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs

Three-Dimensional Statistical Simulation of Gate Leakage Fluctuations Due to Combined Interface Roughness and Random Dopants

Statistical simulation of random dopant induced threshold voltage fluctuations for 35 nm channel length MOSFET

Impact of Extension Induced Fluctuation in FinFETs with Gate Underlap Structure

3-D Simulation of Geometrical Variations Impact on Nanoscale FinFETs

Statistical Simulation of RTS Amplitude Distribution in Realistic Bulk MOSFETs Subject to Random Discreet Dopants.

Variability in nano-scale intrinsic silicon-on-thin-box MOSFETs (SOTB MOSFETs)

Numerical study on effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM performance

Characteristic Variations Induced by Random Fluctuation of Source/Drain Lateral Distribution Dopant in Nano-Scale UTB SOI MOSFET

A Comprehensive Extraction Method to Decompose Different Random Variation Impacts in bulk FinFET Technology

Random interface trap induced fluctuation in 22nm high-k/metal gate junctionless and inversion-mode FinFETs