Abstract:While the issues of Fermi level pinning by interface states at the dielectric/semiconductor interface has first attracted the concern of device engineers working on high-mobility channel devices, more and more attention is going nowadays to the so-called border traps (BTs) at some distance from the interface in the gate dielectric. According to their definition [1] they are able to communicate with the inversion layer in a MOS devices with time constants on the order of 1 ms and higher. As such, they will contribute to the frequency dispersion and hysteresis in capacitance-voltage and transconductance characteristics [2] and generally dominate the low-frequency noise spectrum [3]. Historically speaking, the 1/f noise in MOSFETs has always been interpreted in terms of trapping/detrapping towards BT (Fig. 1), whereby in many cases, pure elastic tunneling was assumed, yielding a simple relationship between the trap depth z and the noise frequency f, which is based on the tunneling parameter a t . The latter mainly depends on the tunneling barier Φ it at the interface and the tunneling effective mass m ox [3]. Based on that, several methods to derive a BT density profile from a noise spectrum have been developed; an example is given in Fig. 2 for the spectrum obtained on a Si-passivated Ge pMOSFET. It is the intension of this work to illustrate the 1/f noise method for oxide trap profiling in high-mobility channel devices with a high-k gate stack. As shown in Fig. 3 for InGaAs/InP/Al 2 O 3 nMOSFETs, quite uniform trap density profiles have been obtained, irrespective of the architecture, i.e., buried channel with InP cap or surface channel (InP etched) or the use of surface passivation with S [4]. On the other hand, the absolute value of the trap density strongly depends on pre- and post-high-k deposition treatments. While there is quite some literature on the LF noise of Ge pMOSFETs with silicon passivation, little results have been reported on alternative gate stacks or n-channel Ge MOSFETs. As shown in Fig. 4, the noise spectrum for a Ge nMOSFET with GeO x /Al 2 O 3 /HfO 2 gate stack is close to 1/f, yielding a uniform profile, according to the constant fxS I function. It corresponds with a high N BT in the range of 6×10 19 cm -3 eV -1 , indicating a rather poor gate stack quality [5]. Finally, the impact of inelastic tunneling in the modeling of BT profiles from 1/f noise spectra will be discussed and a possible internal depth versus frequency calibration will be outlined [6]. References [1] D.M. Fleetwood, IEEE Trans. Nucl. Sci ., 39 , pp. 269-271 (1992). [2] D. Lin et al ., in IEDM Tech. Dig., The IEEE (New York), pp. 645-648 (2012). [3] E. Simoen, H.-C. Lin, A. Alian, G. Brammertz, C. Merckling, J. Mitard and C. Claeys, IEEE Trans. Device and Mater. Reliability, 13 , pp. 444-455 (2013). [4] M. Scarpino, S. Gupta, D. Lin, A. Alian, F. Crupi, and E. Simoen, IEEE Electron Device Lett., 35 , pp. 720-722 (2014). [5] W. Fang, E. Simoen, H. Arimura, J. Mitard, S. Sioncke, H. Mertens, A. Mocuta, N. Collaert, J. Luo, C. Zhao, A. Thean, and C. Claeys, submitted for publication in IEEE Trans. Electron Devices. [6] E. Simoen, J.W. Lee and C. Claeys, IEEE Trans. Electron Devices, 61 , pp. 634-637 (2014). Figure 1

Random interface trap induced fluctuation in 22nm high-k/metal gate junctionless and inversion-mode FinFETs

Impact of Random Interface Traps and Random Dopants in High- /Metal Gate Junctionless FETs

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

A Comparative Study on the Impacts of Interface Traps on Tunneling Fet and Mosfet

Anomalous Random Telegraph Noise in Nanoscale Transistors As Direct Evidence of Two Metastable States of Oxide Traps

Reliability investigation of high-k/metal gate in nMOSFETs by three-dimensional kinetic Monte-Carlo simulation with multiple trap interactions

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Evaluation of MOS Interface Trap Generation after BTI Stress Using Flicker Noise

Characteristics of Gate Current Random Telegraph Signal Noise in SiON/HfO2/TaN P-Type Metal–Oxide–Semiconductor Field-Effect Transistors under Negative Bias Temperature Instability Stress Condition

Interface traps, correlated mobility fluctuations, and low-frequency noise in metal–oxide–semiconductor transistors

Impact of Random Interface Traps Fluctuation on Device Variation of Oxide-Semiconductor Ferroelectric Field-Effect Transistor Memories

Interface trap induced RF and low frequency noise analysis under temperature variations of a hetero-stacked source L-gate TFET

Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs

Impact of Junction Nonabruptness on Random-Discrete-Dopant Induced Variability in Intrinsic Channel Trigate Metal–Oxide–Semiconductor Field-Effect Transistors

Investigation of Switching Kinetics of Interface Traps in Metal-Oxide-Semiconductor-Field-Effect-Transistors with Ultra-narrow Channels

Impact of High-temperature and Interface Traps on Performance of a Junctionless Tunnel FET

Interfacial charge and temperature analysis of gate-all-around line tunneling TFET for improved device reliability

(Invited) the Assessment of Border Traps in High-Mobility Channel Materials

Improving Low-Frequency Noise in 14-Nm FinFET by Optimized High-k/Metal Gate Thermal Processing

Channel Hot-Carrier Degradation Characteristics and Trap Activities of High-K/metal Gate Nmosfets

Three-Dimensional Statistical Simulation of Gate Leakage Fluctuations Due to Combined Interface Roughness and Random Dopants