Investigation on electrical parameters between single and double material gate nanoribbon FETs including trap distributions
Shashank Rai,Shreyas Tiwari,Rashi Chaudhary,Rajesh Saha,Ritu Sharma
DOI: https://doi.org/10.1016/j.mseb.2024.117326
2024-05-01
Abstract:The presence of multiple interface of gate-oxide and semiconductor in Nano-ribbon FET (NR-FET) causes several defects and leads to the degraded electrical parameters. In this regard, the electrical parameters in the existence of interface trap charges (ITCs) for single material gate (SMG) and double material gate (DMG) NR-FETs are extracted using Technology Computer Aided Design (TCAD) simulator. The effect of Uniform/Gaussian ITCs at the oxide and semiconductor interface on drain current, electrostatic potential, ON current, OFF current, and threshold voltage are reported for these devices. The RF/analog performance like transconductance (gm), gate capacitance (Cgg), and cut-off frequency (fc) are reported for these structures in presence of non-ideal trap distributions. Moreover, the linearity parameters like higher order harmonics in gm (gm2 and gm3), voltage intercept points (VIP2 and VIP3), input intercept power (IIP3), and intermodulation distortion (IMD3) are highlighted for these structures. It is seen that DC, RF/analog, and linearity performance of both the NRFETs are significantly affected by Uniform and Gaussian distribution of ITCs. However, the electrical parameters in DMG NRFET is more immune to ITCs than SMG NRFET. Moreover, both the devices have ON state current in the order of 10−3 A, fc of order THz, and improved linearity behaviour in the presence of ITCs, which indicates sustainability of these devices including ITCs.
materials science, multidisciplinary,physics, condensed matter