(Invited) the Assessment of Border Traps in High-Mobility Channel Materials
Eddy Simoen,A. Alian,Hiroaki Arimura,Dennis Lin,Hans Mertens,Jérôme Mitard,Sonia Sioncke,Wen Fang,Jun Luo,Chao Zhao,A. Mocuta,Nadine Collaert,Aaron Thean,Cor Claeys
DOI: https://doi.org/10.1149/ma2015-02/18/834
2015-01-01
Abstract:While the issues of Fermi level pinning by interface states at the dielectric/semiconductor interface has first attracted the concern of device engineers working on high-mobility channel devices, more and more attention is going nowadays to the so-called border traps (BTs) at some distance from the interface in the gate dielectric. According to their definition [1] they are able to communicate with the inversion layer in a MOS devices with time constants on the order of 1 ms and higher. As such, they will contribute to the frequency dispersion and hysteresis in capacitance-voltage and transconductance characteristics [2] and generally dominate the low-frequency noise spectrum [3]. Historically speaking, the 1/f noise in MOSFETs has always been interpreted in terms of trapping/detrapping towards BT (Fig. 1), whereby in many cases, pure elastic tunneling was assumed, yielding a simple relationship between the trap depth z and the noise frequency f, which is based on the tunneling parameter a t . The latter mainly depends on the tunneling barier Φ it at the interface and the tunneling effective mass m ox [3]. Based on that, several methods to derive a BT density profile from a noise spectrum have been developed; an example is given in Fig. 2 for the spectrum obtained on a Si-passivated Ge pMOSFET. It is the intension of this work to illustrate the 1/f noise method for oxide trap profiling in high-mobility channel devices with a high-k gate stack. As shown in Fig. 3 for InGaAs/InP/Al 2 O 3 nMOSFETs, quite uniform trap density profiles have been obtained, irrespective of the architecture, i.e., buried channel with InP cap or surface channel (InP etched) or the use of surface passivation with S [4]. On the other hand, the absolute value of the trap density strongly depends on pre- and post-high-k deposition treatments. While there is quite some literature on the LF noise of Ge pMOSFETs with silicon passivation, little results have been reported on alternative gate stacks or n-channel Ge MOSFETs. As shown in Fig. 4, the noise spectrum for a Ge nMOSFET with GeO x /Al 2 O 3 /HfO 2 gate stack is close to 1/f, yielding a uniform profile, according to the constant fxS I function. It corresponds with a high N BT in the range of 6×10 19 cm -3 eV -1 , indicating a rather poor gate stack quality [5]. Finally, the impact of inelastic tunneling in the modeling of BT profiles from 1/f noise spectra will be discussed and a possible internal depth versus frequency calibration will be outlined [6]. References [1] D.M. Fleetwood, IEEE Trans. Nucl. Sci ., 39 , pp. 269-271 (1992). [2] D. Lin et al ., in IEDM Tech. Dig., The IEEE (New York), pp. 645-648 (2012). [3] E. Simoen, H.-C. Lin, A. Alian, G. Brammertz, C. Merckling, J. Mitard and C. Claeys, IEEE Trans. Device and Mater. Reliability, 13 , pp. 444-455 (2013). [4] M. Scarpino, S. Gupta, D. Lin, A. Alian, F. Crupi, and E. Simoen, IEEE Electron Device Lett., 35 , pp. 720-722 (2014). [5] W. Fang, E. Simoen, H. Arimura, J. Mitard, S. Sioncke, H. Mertens, A. Mocuta, N. Collaert, J. Luo, C. Zhao, A. Thean, and C. Claeys, submitted for publication in IEEE Trans. Electron Devices. [6] E. Simoen, J.W. Lee and C. Claeys, IEEE Trans. Electron Devices, 61 , pp. 634-637 (2014). Figure 1