Abstract:Oxide semiconductors have attracted revived interest for complementary metal–oxide–semiconductor (CMOS) back-end-of-line (BEOL) compatible devices for monolithic 3-dimensional (3D) integration. To obtain a high-quality oxide/semiconductor interface and bulk semiconductor, it is critical to enhance the performance of oxide semiconductor transistors. Atomic layer-deposited (ALD) indium oxide (In 2 O 3 ) has been reported with superior performance such as high drive current, high mobility, steep subthreshold slope, and ultrathin channel. In this work, the interface and bulk traps in the MOS gate stack of ALD In 2 O 3 transistors are systematically studied by using the C–V and conductance method. A low EOT of 0.93 nm is achieved directly from the accumulation capacitance in C–V measurement, indicating a high-quality gate oxide and oxide/semiconductor interface. Defects in bulk In 2 O 3 with energy levels in the subgap are confirmed to be responsible for the conductance peak in G P /ω versus ω curves by TCAD simulation of C–V and G–V characteristics. A high n-type doping of 1×10 20 /cm 3 is extracted from C–V measurement. A high subgap density of states (DOS) of 3.3×10 20 cm −3 eV −1 is achieved using the conductance method, which contributes to the high n-type doping and high electron density. The high n-type doping further confirms the capability of channel thickness scaling because the charge neutrality level aligns deeply inside the conduction band.

Extracting Interface Trap Density in &Amp;beta;-Ga&lt;sub&gt;2&lt;/sub&gt;o&lt;sub&gt;3&lt;/sub&gt;-based Heterointerface

Extracting interface trap density in ?-Ga<sub>2</sub>O<sub>3</sub>-based heterointerface

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

A Novel Insight on Interface Traps Density (Dit) Extraction in GaN-on-Si MOS-c HEMTs

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs

Comparison of Methods for Accurate Characterization of Interface Traps in GaN MOS-HFET Devices

Impact of Interface Trap Density on the Endurance of HFO<inf>2</inf>/SI FEFETS

Extraction of Average Interface Trap Density using Capacitance-Voltage Characteristic at SiGe p-FinFET and Verification using Terman's Method

Electrochemical Impedance Spectroscopy for Quantitative Interface State Characterization of Planar and Nanostructured Semiconductor-Dielectric Interfaces

Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNx As Gate Dielectric

Optimizing interface properties of HfO2/Si0.73Ge0.27 gate stacks through sulfur passivation and post-deposition annealing

New method to extract interface states density at the back and the front gate interfaces of FDSOI transistors from CV-GV measurements

Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices

Reduction in Interface Trap Density of Al2O3/SiGe Gate Stack by Electron Cyclotron Resonance Plasma Post-nitridation

Characterization of Interface and Bulk Traps in Ultrathin Atomic Layer-Deposited Oxide Semiconductor MOS Capacitors With HfO2/In2O3 Gate Stack by C-V and Conductance Method

Effect of Interface and Bulk Traps on Thec–vcharacterization of a LPCVD-SiNx/AlGaN/GaN Metal-Insulator-semiconductor Structure

Interface/Border Trap Characterization Of Al2o3/Aln/Gan Metal-Oxide-Semiconductor Structures With An Aln Interfacial Layer

Impact of plasma post oxidation temperature on interface trap density and roughness at GeOx/Ge interfaces

Al2o3/Geox/Ge Gate Stacks with Low Interface Trap Density Fabricated by Electron Cyclotron Resonance Plasma Postoxidation

Interface and Border Traps in the Gate Stack of Carbon Nanotube Film Transistors with an Yttria Dielectric

Extracting Interface Trap Density in &Amp;beta;-Ga&amp;lt;sub&amp;gt;2&amp;lt;/sub&amp;gt;o&amp;lt;sub&amp;gt;3&amp;lt;/sub&amp;gt;-based Heterointerface