Abstract:The nanowire gate-all-around (GAA) structures with the nearly ultimate channel electrostatic integrity of the gate field can exhibit the best immunity to the short channel effect and drain-induced barrier lowering. Moreover, owing to the enhanced control efficiency of gate over the tunneling junction, the GAA-TFET also gives improved subthreshold swing and on-state current. Despite the excellent device performance, an accurate model is very significant for the practical application. Compared with the numerical methods which are usually time consuming and computationally inefficient, an analytical model could accelerate the device investigation and circuit design process. Even though some tunneling current models have already been reported for nanowire tunneling field-effect-transistors (TFETs), the model of the terminal capacitance is still an issue for nanowire TFETs. The capacitance is of great significance for the transient simulation. In this paper, a physical and analytical potential model considering both the source depletion region and the channel mobile charges, is developed for the GAA-TFETs. The results from the model are verified with the numerical simulations, and the excellent agreement between the two results indicates the validation of the proposed model. Based on the potential model, the terminal charge model and the capacitance model are further developed and also verified by the numerical simulations. The main inflection and variation of the terminal charges and capacitances with the biases can be predicted by our model. Besides, both the model results and the numerical simulations both demonstrate that the gate charge is dominated mainly by the drain charges and the contribution of the source charges can be almost neglected. This also leads to the very small gate-source capacitance and very large Miller capacitance in the TFET device. This will be detrimental to the performance of TFET-based digital circuits but can be mitigated with the hetero-oxide gate structure. The second order effects, such as the quantum confinement and traps, are ignored in this paper and can be taken into the core model in the future work. It should also be noted that there is no iterative process involved during the model derivation, thus the developed model can be easily applied to the widely used SPICE platform and will be useful in designing and investigating the GAA-TFET based circuits.

Investigation of Trap Density Effect in Gate-All-Around Field Effect Transistors Using the Finite Element Method

Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs

Interfacial charge and temperature analysis of gate-all-around line tunneling TFET for improved device reliability

Capacitance Model for Nanowire Gate-All-around Tunneling Field-Effect-transistors

Comparison of Methods for Accurate Characterization of Interface Traps in GaN MOS-HFET Devices

A Study of the Gate-Stack Small-Signal Model and Determination of Interface Traps in GaN-Based MIS-HEMTs

Mobility effects due to doping, temperature and interface traps in gate-all-around FinFETs

Signature of electrothermal transport in 18nm vertical junctionless gate-all-around nanowire field effect transistors

Computational Study of Thermal Stress in Gate-All-Around Nanosheet Field Effect Transistor

Experimental observation and modeling of the impact of traps on static and analog/HF performance of graphene transistors

A Novel Insight on Interface Traps Density (Dit) Extraction in GaN-on-Si MOS-c HEMTs

Study on the Charging Current of Surface Traps in AlGaN/GaN High Electron Mobility Transistors with a Slot Gate Structure

Optimization of electrothermal response of GAAFET using Taguchi's approach and an artificial neural network

Quantitative Evaluation of Slow Traps Near Ge Mos Interfaces by Using Time Response of Mos Capacitance

Multiphysics Simulation of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in Gate-All-Around Nanosheet Field Effect Transistors

Trap assisted tunneling and its effect on subthreshold swing of tunnel field effect transistors

Assessment of Trap Charges for Analog/RF FOMs and Linearity Behaviour on InAs Based Dual Metal Hetero Gate Oxide TFET for Enhanced Reliability

Study of the Influence of Different Gate Oxide Traps on Threshold Voltage Drift of SiC MOSFET Based on Transient Current

New Insights into Oxide Traps Characterization in Gate-All-around Nanowire Transistors with TiN Metal Gates Based on Combined Ig-Id RTS Technique

A Comparative Study on the Impacts of Interface Traps on Tunneling Fet and Mosfet

An insight to the performance of vertical super-thin body (VSTB) FET in presence of interface traps and corresponding noise and RF characteristics