Abstract:We evaluated the TiN/TaN/TiAl triple-layer to modulate the effective work function (EWF) of a metal gate stack for the n-type metal-oxide-semiconductor (NMOS) devices application by varying the TiN/TaN thickness. In this paper, the effective work function of EWF ranges from 4.22 to 4.56 eV with different thicknesses of TiN and TaN. The thinner TiN and/or thinner in situ TaN capping, the closer to conduction band of silicon the EWF is, which is appropriate for 2-D planar NMOS. Mid-gap work function behavior is observed with thicker TiN, thicker in situ TaN capping, indicating a strong potential candidate of metal gate material for replacement gate processed three-dimensional devices such as FIN shaped field effect transistors. The physical understandings of the sensitivity of EWF to TiN and TaN thickness are proposed. The thicker TiN prevents the Al diffusion then induces the EWF to shift to mid-gap. However, the TaN plays a different role in effective work function tuning from TiN, due to the Ta-O dipoles formed at the interface between the metal gate and the high-k layer.

Statistical simulation of metal-gate work-function fluctuation in high-κ/metal-gate devices

Size effect on effective work function in high-k metal gate MOSFET

Simulation Study of Metal-gate Work-function Optimization and the Impact on Device Performance in 32 nm Gate-last Process

Reliability investigation of high-k/metal gate in nMOSFETs by three-dimensional kinetic Monte-Carlo simulation with multiple trap interactions

An Effective Work-Function Tuning Method of Nmoscap with High-K/Metal Gate by Tin/Tan Double-Layer Stack Thickness

Simulation Study of Intrinsic Parameter Fluctuations in Variable-Body-Factor Silicon-On-Thin-Box Metal Oxide Semiconductor Field Effect Transistors

Negative Bias Temperature Instability Characteristics and Degradation Mechanisms of Pmosfet with High-K/Metal Gate Stacks

Compact Modeling of Dynamic Threshold Voltage of Nanoscale FinFET High K Gate Stack and Application in Circuit Simulation

Temperature- and Voltage-Dependent Trap Generation Model in High-K Metal Gate MOS Device with Percolation Simulation

Study of Work-Function Variation on Performance of Dual-Metal Gate Fin Field-Effect Transistor.

A Threshold Voltage Model for High-K Gate-Dielectric Mosfets Considering Fringing-Field Effect

Physical Analysis of Breakdown in High-Κ/metal Gate Stacks Using TEM/EELS and STM for Reliability Enhancement (Invited)

Models on threshold voltage/subthreshold swing and structural design of high-k gate dielectric GeOI MOSFET

Modeling of Dynamic Threshold Voltage of High K Gate Stack and Application in FinFET Reliability Simulation

Three-Dimensional Statistical Simulation of Gate Leakage Fluctuations Due to Combined Interface Roughness and Random Dopants

Channel Hot-Carrier Degradation Characteristics and Trap Activities of High-K/metal Gate Nmosfets

Impact of Random Dopant Fluctuation Effect on Surrounding Gate MOSFETs: from Atomic Level Simulation to Circuit Performance Evaluation.

Degradation Investigation of High-k/Metal Gate Nmosfets by 3D KMC with Multiple Traps Interactions

Threshold Voltage Model for MOSFETs with High-K Gate Dielectrics

Wide $v_{\rm Fb}$ and $v_{\rm Th}$ Tunability for Metal-Gated MOS Devices with HfLaO Gate Dielectrics

Statistical simulation of random dopant induced threshold voltage fluctuations for 35 nm channel length MOSFET