Abstract:An analytical model for drain current of high-k gate dielectric fully-depleted nanoscale germanium-on-insulator (GeOI) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) is established by solving two-dimensional Poisson's equation to derive the surface potential and inversion charge in the channel region. This drain current model includes velocity-saturation, channel-length modulation and mobility-modulation effects; and it simultaneously considers the impacts of the interface-trapped charges at both gate oxide/channel and buried oxide/channel interfaces and the fixed oxide charges on the drain current. A good agreement between the simulated drain current and experimental data is achieved in both the saturation and non-saturation regions, confirming the validity of the model. Using the model, the influences of the main structural and physical parameters on transconductance, output conductance, cut-off frequency, and voltage gain of the device are investigated. These can be served as a guide for the design of the GeOI PMOSFET.

Models on threshold voltage/subthreshold swing and structural design of high-k gate dielectric GeOI MOSFET

A 2-D analytical threshold-voltage model for GeOI/GeON MOSFET with high-k gate dielectric.

Modeling on Drain Current of High-K Gate Dielectric Fully-Depleted Nanoscale Germanium-On-Insulator P-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

2D threshold-voltage model for high-k gate-dielectric MOSFETs

Influences of Fringing Capacitance on Threshold Voltage and Subthreshold Swing of a GeOI Metal-Oxide-semiconductor Field-Effect Transistor

Threshold Voltage Model for MOSFETs with High-K Gate Dielectrics

A 2D Analytical Model for SCEs in MOSFETs with High-K Gate Dielectric

A Threshold-Voltage Model for Small-Scaled Gaas Nmosfet with Stacked High-K Gate Dielectric

Simulation of Electrical Characteristics and Structural Optimization for Small-Scaled Dual-Gate Geoi Mosfet with High-K Gate Dielectric

Threshold Voltage Model for Deep-Submicrometer MOSFET's

A Threshold Voltage Model for High-K Gate-Dielectric Mosfets Considering Fringing-Field Effect

Analytical Model for Subthreshold Swing and Threshold Voltage of Surrounding Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Fringe-Induced Barrier Lowering (fibl) Included Sub-Threshold Swing Model for Double-Gate Mosfets

Influences of k values of gate dielectric and buried insulator on subthreshold slope of UTB SOI MOSFETs

Gate-leakage model of Ge MOS capacitor with high-k gate dielectric

An Analytical Subthreshold Swing Model for Fully-Depleted MOSFETs with Vertical Gaussian Profile Fabricated on Modified Silicon-on-insulator Wafers

Analytical Modeling of Threshold Voltage for Double Gate MOSFET

The Study on Two-Dimensional Analytical Model for Gate Stack Fully Depleted Strained Si on Silicon-Germanium-on-insulator MOSFETs

Threshold Voltage Analytical Model for Strained Si Soi Mosfet with High-K Dielectric

Direct Tunneling Current Model for MOS Devices with Ultra-Thin Gate Oxide Including Quantization Effect and Polysilicon Depletion Effect