Abstract:When the traditional planar metal-oxide-semiconductor-field-effect transistors (MOSFETs) encounter insurmountable bottleneck of static power dissipation, junctionless transistor (JLT) becomes a promising candidate for sub-22 nm nanoscale devices due to its simpler fabrication process and better short-channel performances. Subthreshold behaviors dominate the standby power of nanoscale JLTs. In this chapter, a physics-based analytical model of electrostatic potential for both silicon and germanium short-channel junctionless cylindrical surrounding-gate (JLCSG) MOSFETs operated in the subthreshold regime is proposed, in which the full two-dimensional (2D) Poisson's equation is solved in the channel region by a method of series expansion. The expression of the proposed electrostatic potential is completely rigorous and explicit. Based on this result, the expressions of threshold voltage, subthreshold drain current, and subthreshold swing for JLCSG MOSFETs are derived. Subthreshold behaviors are studied in detail by changing different device parameters and bias conditions, including doping concentration, channel radius, gate length, gate equivalent oxide layer thickness, drain voltage, and gate voltage. Results predicted by all the analytical models agree well with numerical solutions from the three-dimensional simulator. These analytical models can be used to investigate the operating mechanisms of nanoscale JLCSG MOSFETs and to optimize their device performances.

Influences of k values of gate dielectric and buried insulator on subthreshold slope of UTB SOI MOSFETs

Analysis of Off-State and On-State Performance in A Silicon-On-Insulator Power Mosfet with A Low-K Dielectric Trench

An Analytical Subthreshold Swing Model for Fully-Depleted MOSFETs with Vertical Gaussian Profile Fabricated on Modified Silicon-on-insulator Wafers

Fringe-Induced Barrier Lowering (fibl) Included Sub-Threshold Swing Model for Double-Gate Mosfets

Coulomb Scattering Induced Mobility Degradation in Ultrathin-body SOI MOSFETs with High-K Gate Stack

Design of Sub-50 Nm Ultrathin-Body (UTB) SOI MOSFETs with Raised S/D

Characteristics of Sub-100 nm High-k Gate Dielectrics MOSFETs With Different Source / Drain Structure

Simulation Research of 4H-SiC Double-Trench MOSFET with High-k Gate Dielectric Materials

A Subthreshold Swing Model for FD SOI MOSFET with Vertical Gaussian Profile

The Influence of Gate Line Edge Roughness and Thickness of Silicon Film on the Performance of UTBB MOSFETs

Investigation into sub-threshold performance of double-gate accumulation-mode SOI PMOSFET

A Rigorous Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-On-Insulator (Utb-Soi) Mosfets

Numerical Analysis of 4H-SiC MOSFET Design Including High-k Gate Dielectrics for Power electronic Applications

The Influence of Tunneling Effect and Inversion Layer Quantization Effect on Threshold Voltage of Deep Submicron Mosfets

A 2D Analytical Model for SCEs in MOSFETs with High-K Gate Dielectric

The Influence of Strained SiGe Thin Layer and Correlative Structure Parameters on Sub-Threshold Characteristics of SiGe PMOSFETs

Modeling of Gate Tunneling Current for Nanoscale MOSFETs with High-k Gate Stacks

Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs

A Subthreshold Current Model of Fully-Depleted Silicon-on-Insulator Metal–Oxide–Semiconductor Field Effect Transistors with Vertical Gaussian Profile

A Carrier-Based Analytic Model for Undoped (Lightly Doped) Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs

Investigation of Self-Heating Effects in UTBB FD-SOI MOSFETs by a Modified Thermal Conductivity Model