Abstract:A complete separation flow for different types of traps, including the separation of energy levels (ETs) and the separation of charging kinetics, making different traps can be modeled and characterized separately by simple experiments. Industrial-grade 7 nm pFinFETs under negative bias temperature instability (NBTI) stress condition is chosen for the demonstration. Four types of traps are identified, including oxide trap Type-A located in the interfacial layer (IL) layer, oxide trap Type-B (B1 and B2) located in the HK layer, and interface trap Type-C located at Si/IL interface. Type-A trap belongs to a preexisting trap which can be well described by the two-state non-radiative multiphonon (NMP) theory and may originate from Vo in SiO2. Types-B1 and Type-B2 traps originate from Ni and Hi respectively, and can be described by incorporating the activation state into the two-state NMP theory. Type-C is located at Si/IL interface and follows the classical power law relationship with the time exponent of 0.17, which may be caused by the breakage of the Si-H bonds due to the reaction with atomic H from either the substrate or the gate. By modeling each type of trap respectively, a unified aging prediction framework was proposed and its long-term predictive capability was experimentally verified under various working conditions. The contribution of each trap to degradation is also discussed, which is helpful to the Design-Technology co-optimization (DTCO) in advanced nodes.

Temperature- and Voltage-Dependent Trap Generation Model in High-K Metal Gate MOS Device with Percolation Simulation

Modeling of charge trapping induced threshold-voltage instability in high-/spl kappa/ gate dielectric FETs

Reliability investigation of high-k/metal gate in nMOSFETs by three-dimensional kinetic Monte-Carlo simulation with multiple trap interactions

Degradation Investigation of High-k/Metal Gate Nmosfets by 3D KMC with Multiple Traps Interactions

Resonant tunneling model of high-k gate stack for MOSFET

Channel Hot-Carrier Degradation Characteristics and Trap Activities of High-K/metal Gate Nmosfets

A Semi-Empirical Analytic Model for Threshold Voltage Instability in MOSFETs with High-Kgate Stacks

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

Characterization of Different Trap States in AlGaN/GaN MIS-HEMTs under High Reverse Gate Stress

Surface Acceptor-Like Trap Model for Gate Leakage Current Degradation in Lattice-Matched Inaln/Gan Hemts

Models on threshold voltage/subthreshold swing and structural design of high-k gate dielectric GeOI MOSFET

Time dependent 3-D statistical KMC simulation of high-k degradation including trap generation and electron capture/emission dynamic

Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs

On the Understanding of pMOS NBTI Degradation in Advance Nodes: Characterization, Modeling, and Exploration on the Physical Origin of Defects

Trap Dynamics Based 3D Kinetic Monte Carlo Simulation for Reliability Evaluation of UTBB MOSFETs

Modeling of Dynamic Threshold Voltage of High K Gate Stack and Application in FinFET Reliability Simulation

Modeling of Gate Tunneling Current for Nanoscale MOSFETs with High-k Gate Stacks

Study On Influences Of Tin Capping Layer On Time-Dependent Dielectric Breakdown Characteristic Of Ultra-Thin Eot High-Kappa Metal Gate Nmosfet With Kmc Tddb Simulations

Investigation of Surface Traps-Induced Current Collapse Phenomenon in AlGaN/GaN High Electron Mobility Transistors with Schottky Gate Structures

Negative Bias Temperature Instability Characteristics and Degradation Mechanisms of Pmosfet with High-K/Metal Gate Stacks

Gate-leakage model of Ge MOS capacitor with high-k gate dielectric