Abstract:GaN-based high electron mobility transistors (HEMTs) have exhibited great application prospects in power and radio frequency devices, thanks to the superior properties of GaN. Despite the significant commercialization progress, the reliability of GaN-based HEMTs remains a challenge. This work experimentally investigates the time-dependent degradation of Mg-doped GaN/AlN superlattice HEMTs under both OFF-state and SEMI-ON-state bias conditions and proposes that GaN/AlN superlattices as a barrier can solve the Vth instability issues of GaN HEMTs under OFF-state and SEMI-ON-state bias conditions. On the one hand, in the SEMI-ON-state, the hot electron effect leads to the degradation of Ig, gm,max, and Id,sat to varying degrees. However, the as-prepared GaN-based HEMTs exhibit excellent Vth stability (almost no change) under hot electron injection, on the account of the excellent two-dimensional electron gas confinement in the GaN/AlN superlattice structure. On the other hand, in the OFF-state, positive Vth shift (about 0.12 V) is induced by the hole emission in the GaN/AlN superlattice structure under reverse bias stress. In addition, the stress-induced destruction of MgO gate dielectric gives rise to the gate leakage, which increases by 2 orders of magnitude and triggers an irreversible degradation (about 10%) of the gm,max. These results are expected to provide a solution to the Vth instability of GaN HEMTs.

Characterization of Different Trap States in AlGaN/GaN MIS-HEMTs under High Reverse Gate Stress

Investigation on the Threshold Voltage Instability Mechanism of P-Gan Gate AlGaN/GaN HEMTs under High-Temperature Reverse Bias Stress

Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State Stress

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Observation of Threshold Voltage Instabilities in Algan/Gan Mis Hemts

High-field-induced Electron Detrapping in an AlGaN/GaN High Electron Mobility Transistor

Degradation under High-Field Stress and Gate Stress of AlGaN/GaN HEMTs

Negative Bias-Induced Threshold Voltage Instability Andzener/interface Trapping Mechanism in GaN-based MIS-HEMTs

Electrical Degradation of In Situ SiN/AlGaN/GaN MIS-HEMTs Caused by Dehydrogenation and Trap Effect Under Hot Carrier Stress

Degradation of AlGaN/GaN High Electron Mobility Transistors with Different AlGaN Layer Thicknesses under Strong Electric Field

Study on the Electrical Degradation of AlGaN/GaN MIS-HEMTs Induced by Residual Stress of SiNx Passivation

Degradation Behavior and Trap Analysis Based on Low-Frequency Noise of AlGaN/GaN HEMTs Subjected to Radio Frequency Overdrive Stress

V T Shift and Recovery Mechanisms of p-GaN Gate HEMTs Under DC/AC Gate Stress Investigated by Fast Sweeping Characterization

Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs under Electrostatic Discharge Stress

Investigating Two-Stage Degradation of Threshold Voltage Induced by Off-State Stress in AlGaN/GaN HEMTs

Trap States Induced by Reactive Ion Etching in AlGaN/GaN High-Electron-mobility Transistors

Observation Of Self-Recoverable Gate Degradation In P-Gan Algan/Gan Hemts After Long-Term Forward Gate Stress: The Trapping & Detrapping Dynamics Of Hole/Electron

Analysis of VTH Degradation and Recovery Behaviors of P-Gan Gate HEMTs under Forward Gate Bias

Different Gate Current Degradation Mechanisms in AlGaN/GaN High Electron Mobility Transistors

Degradation Mechanisms of Mg-doped GaN/AlN Superlattices HEMTs under Electrical Stress

Numerical Explanation of Slow Transients in an AlGaN/GaN HEMT