Abstract:In the semiconductor industry supply chain, there are complex processing steps from wafer to chip. Rapid Thermal Processing (RTP) is one of the key technologies, using lasers or high-temperature lamps to rapidly heat the wafer to over 1000°C for several seconds. This technique can produce high-quality silicides and oxides on the wafer while reducing the thermal budget in terms of temperature and time. RTP systems must be able to change the spatial energy distribution radiated onto the wafer to maintain temperature uniformity under different processing conditions, including varying gases, pressures, and wafer structures. However, the non-equilibrium conditions in RTP make modeling and prediction challenging, with temperature coupling issues in different wafer regions. This paper models the wafer heating system as a 5th-order time-delayed first-order inertia matrix and proposes a corresponding feedforward decoupling method. Traditional incremental PID control, when ramping up temperatures above 1000°C, leads to prolonged oscillations near the target temperature due to temperature coupling between regions, resulting in slow temperature convergence. The method proposed in this paper can effectively eliminate inter-regional coupling effects, unify PID parameters for better determination, and deploy them in practical RTP systems. Experimental results demonstrate that temperature convergence can be achieved rapidly, enhancing system heating efficiency. This study provides an effective solution to temperature control issues in wafer processing, with important practical implications for the semiconductor equipment manufacturing industry.

Feedback Control System of Wafer Temperature for Advanced Plasma Processing and its Application to Organic Film Etching

Wafer temperature control method and equipment

A MIMO Decoupling Algorithm for Rapid Heating Systems of Wafers

High Precision Temperature Control for Plastic Film Based on a Combined Method

Advances in Thermal Plasma Temperature Diagnostic Methods

Study on the Distribution Control of Etching Rate and Critical Dimensions in Microwave Electron Cyclotron Resonance Plasmas for the Next Generation 450 mm Wafer Processing

Study of Form Control Algorithm in Atmospheric Pressure Plasma Processing

Detachment Plasma Achieved Based on Active Temperature Feedback System in EAST

“SumiTune” High-Precision Temperature Distribution Control System for Single-Wafer Film Deposition Equipment

Temperature Precise Control in Hot Embossing Device

Integrating run-to-run control with feedback control for a spatial atomic layer etching reactor

Analysis of the Effect of Heating Control Conditions on Temperature Distribution in a Wafer During Rapid Thermal Processing With Lamp Heaters

Data-Driven Analysis of High-Temperature Fluorocarbon Plasma for Semiconductor Processing

Controlling gate-CD uniformity by means of a CD prediction model and wafer-temperature distribution control

Fast and Precise Temperature Control for a Semiconductor Vertical Furnace via Heater-Cooler Integration

Optimization of an electron cyclotron resonance etch process using full wafer charge coupled device interferometry

Effect of Substrate Heating in Thickness Correction of Quartz Crystal Wafer by Plasma Chemical Vaporization Machining

Thermal Modelling for Conformal Polishing in Inductively Coupled Atmospheric Pressure Plasma Processing

Temperature Distribution and Deposition Rate on Semiconductor Wafers in Low-Pressure CVD Equipment Processing Two Wafers

An In Situ Approach to Real-Time Spatial Control of Steady-State Wafer Temperature During Thermal Processing in Microlithography

Design of Single-Wafer Furnace and Its Rapid Thermal Processing Applications