Abstract:Full wafer charge coupled device interferometry is a new technique that can be used for in situ monitoring of plasma etching. The use of this technique to optimize an electron cyclotron resonance etch process for TaSiN and its application to x-ray mask fabrication are presented. Fine tuning of the etch process was performed by optimizing the microwave power and the collimating magnet current. Under optimized conditions, etch rate uniformity (3σ) across a 4 in. substrate was as low as 2%. The full wafer interferometer enables in situ uniformity measurements, thus minimizing process development time. The etch process has been used to successfully fabricate sub-0.25 μm x-ray masks.

What problem does this paper attempt to address?

This paper aims to solve the uniformity problems existing in the electron cyclotron resonance (ECR) etching process, especially when tantalum silicon nitride (TaSiN) is used as a material for X - ray mask manufacturing. Specifically, the researchers achieved in - situ monitoring of the plasma etching process by introducing the full - wafer charge - coupled device interferometry (FWI) technology. This method can not only optimize the uniformity of the etching rate, but also monitor the end - point in real - time during the etching process, thereby reducing the process development time and improving the quality of the final product. ### Problems Solved by the Paper: 1. **Uniformity of Etching Rate**: During the ECR etching process, due to the non - uniform distribution of conditions inside the reactor, the etching rate varies at different positions on the wafer surface. This non - uniformity will affect the quality of the X - ray mask, especially for the micro - structures requiring high precision. 2. **Etching End - point Detection**: Traditional end - point detection methods may not be accurate or real - time enough, resulting in over - etching or under - etching. By using the FWI technology, changes during the etching process can be monitored in real - time, and the etching end - point can be accurately determined, avoiding these problems. 3. **Process Optimization**: Optimize the ECR etching process by adjusting parameters such as microwave power and magnet current to achieve the best etching uniformity and selectivity. This not only improves the etching efficiency, but also reduces the process development time and cost. ### Main Contributions: - **Application of Full - Wafer Interferometer**: For the first time, the FWI technology is applied to the optimization of the ECR etching process, realizing real - time monitoring of the etching rate and uniformity. - **Parameter Optimization**: Through experimental data, the optimal microwave power and magnet current are determined, making the etching rate uniformity on a 4 - inch wafer less than 2%. - **Preparation of High - Quality X - Ray Masks**: Using the optimized process, X - ray masks with feature sizes as small as 0.1 μm are successfully prepared, having good sidewall angles and etching offset uniformity. In conclusion, this paper solves the uniformity and end - point detection problems existing in the ECR etching process by introducing advanced measurement techniques, providing an effective solution for the high - precision manufacturing of X - ray masks.

Optimization of an electron cyclotron resonance etch process using full wafer charge coupled device interferometry

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