Abstract:In modern semiconductor manufacturing, optimizing plasma etching processes is key for advancing technology and achieving profitable production. In this study, we propose an efficient process flow to calibrate the etching mechanisms and optimize the etch profile by combining three-dimensional plasma simulations with machine learning (ML). Our proposed workflow speeds up the model calibration process and effectively addresses data scarcity issues by integrating extensive simulation data with TEM and other data sources. We have developed a three-dimensional Cl2/HBr/O2 plasma etching model for shallow trench isolation (STI), which is based on physical and chemical reaction mechanisms and external parameters consistent with actual production requirements, such as gas ratio, time duration, and chamber conditions. Machine learning is employed to tackle both forward and inverse problems. In the forward problem, the model predicts etching profiles under varying process conditions, with accuracy and similarity assessed using multiple criteria, including the structural similarity index (SSIM). Our approach achieves a notable reduction in prediction time, completing forecasts in 0.5 seconds compared to the 6500 CPU seconds required by TCAD. In the inverse problem, the model adjusts physical parameters to match observed results, improving its predictive accuracy. After model calibration, predictions are validated with wafer test outcomes, showing relative errors below 7%, thereby confirming the accuracy and robustness of the model parameters and the effectiveness of the entire process.

Modeling and Optimization of Process Parameters of a DF-CCP Etcher Chamber

Multidisciplinary optimization of etch process chamber on the basis of MCDM

Surrogate Modeling and Optimizing for CCP Etch Process

Modeling Of Two-Dimensional Dynamic Temperature Distribution Of A Lpcvd Process And Control Design By Mpc

Modeling Approach and Analysis of the Structural Parameters of an Inductively Coupled Plasma Etcher Based on a Regression Orthogonal Design

Two-Dimensional Discharge Simulation of Inductively Coupled Plasma Etcher

Three-Dimensional Discharge Simulation of Inductively Coupled Plasma Etcher

Influence of Configurations of Chamber and Coil on Uniformity of Plasma Distribution for Inductively Coupled Plasma Etcher

Simulation of SiO2 etching in an inductively coupled CF4 plasma

Analysis of Processing Chamber Flow Field Characteristics for an ICP Etcher Based on Regression Orthogonal Design

Optimizing Plasma Etching: Integrating Precise Three-Dimensional Etching Simulation and Machine Learning for Multi-Objective Optimization

Modeling of Perpendicularly Driven Dual-Frequency Capacitively Coupled Plasma

Simulation of SiO<sub>2</sub> etching in an inductively coupled CF<sub>4</sub> plasma

Numerical characterization of dual-frequency capacitively coupled plasmas modulated by electron beam injection

An Optimized-Based Ion Etch Yield Modeling Method in Plasma Etching

Process Parameters Optimization of Film Cooling Holes and Measurement Experiment of Recast Layer Thickness in EDM

Simulation of Discharge Characteristics of Capacitively Coupled Plasma

Numerical characterization of capacitively coupled plasma driven by tailored frequency modulated radio frequency source

Gas Flow Simulation Research on Reaction Chamber of ICP Etcher

Optimization of an electron cyclotron resonance etch process using full wafer charge coupled device interferometry

Study Charge Effect in Dual Damascenes Etch Process of 0.13 μm Cu-line Technology